Mr. Julien Mailfert Profile

Julien Mailfert

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Publications (12)

Proceedings Article | 25 March 2016 Paper

Design-based metrology: beyond CD/EPE metrics to evaluate printability performance

Sandip Halder, Julien Mailfert, Philippe Leray, David Rio, Yi-Hsing Peng, Bart Laenens

Proceedings Volume 9778, 97780W (2016) https://doi.org/10.1117/12.2221894

KEYWORDS: Metrology, Scanning electron microscopy, Semiconducting wafers, Critical dimension metrology, Optical proximity correction, Logic, Image processing, Process control, Electron microscopes, Tolerancing, Distance measurement, Lithography, Finite element methods, Calibration

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Proceedings Article | 4 September 2015 Paper

Advanced process characterization of a 10nm Metal 1 Logic layer using light source modulation and monitoring

Paolo Alagna, Omar Zurita, Vadim Timoshkov, Patrick Wong, Greg Rechtsteiner, Jan Baselmans, Julien Mailfert, Will Conley, Simon Hsieh

Proceedings Volume 9661, 966105 (2015) https://doi.org/10.1117/12.2196862

KEYWORDS: Light sources, Semiconducting wafers, Optical lithography, Critical dimension metrology, Logic, Line width roughness, Optical proximity correction, Metals, Scanners, Modulation

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Proceedings Article | 18 March 2015 Paper

Optimum ArFi laser bandwidth for 10nm node logic imaging performance

Paolo Alagna, Omar Zurita, Vadim Timoshkov, Patrick Wong, Gregory Rechtsteiner, Jan Baselmans, Julien Mailfert

Proceedings Volume 9426, 942609 (2015) https://doi.org/10.1117/12.2085823

KEYWORDS: Optical lithography, Logic, Semiconducting wafers, Line width roughness, Light sources, Photomasks, Optical proximity correction, Lithography, Process control, Critical dimension metrology

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Proceedings Article | 17 April 2014 Paper

Impact of stochastic effects on EUV printability limits

P. De Bisschop, J. Van de Kerkhove, J. Mailfert, A. Vaglio Pret, J. Biafore

Proceedings Volume 9048, 904809 (2014) https://doi.org/10.1117/12.2047827

KEYWORDS: Stochastic processes, Scanning electron microscopy, Semiconducting wafers, Extreme ultraviolet, Photomasks, Optical proximity correction, Nanoimprint lithography, Contamination, Principal component analysis, Critical dimension metrology

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Proceedings Article | 2 April 2014 Paper

Contour-based metrology for complex 2D shaped patterns printed by multiple-patterning process

Daisuke Fuchimoto, Toru Ishimoto, Hiroyuki Shindo, Hitoshi Sugahara, Yasutaka Toyoda, Julien Mailfert, Peter De Bisschop

Proceedings Volume 9050, 90500V (2014) https://doi.org/10.1117/12.2046783

KEYWORDS: Personal protective equipment, Optical proximity correction, Optical lithography, Metrology, Etching, Semiconducting wafers, Metals, Lithography, Photomasks, Reliability

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We developed a new measurement method enabling to quantitatively and accurately evaluate 2D pattern shapes, which becomes critical in patterning control of Metal layer patterns transferred by Litho-Etch-Litho-Etch (LELE) process. In LELE, a split patterning of a Metal-A (MA) layer and a Metal-B (MB) layer makes patterning control more challenging. Hence, it is essential to evaluate the shape of transferred patterns after final etching in order to verify that the patterning control of MA and MB layer patterns is performed within an allowable budget. For this, our Pattern Shape Quantification (PSQ) method [1][2][3], which enables to measure dimensional difference of the transferred pattern shape from their target-design, is an effective metrology. Patterns transferred through a LELE process contain the effects of two types of shape modifications. The first is the fidelity of the individual pattern shapes (e.g. pattern-end pull-back or push-out) whose determinative factors are adopted design (e.g. OPC and SRAF), process condition (of e.g. lithography and etching), etc. The second is the shift in position between MA and MB patterns induced by Pattern Placement Error (PPE) of MB with respect to MA. That means that the edge-placement errors (EPE) in the final pattern are not only due to the fidelity of the transferred pattern shape, but are also impacted by the PPE. Also, a space between MA and MB patterns will be affected by the PPE as well. A failure to maintain a required minimum space between patterns could lead to a leak-current between patterns (and hence directly affect device performance), so it is important that the PPE can be measured accurately. Therefore, we developed a method to measure local PPE in actual device patterns, from CD-SEM images, that also outputs a pattern-contour in which this PPE has been removed. Utilizing such a pattern-contour into the PSQ method enables to quantitatively determine the fidelity of transferred pattern shape solely induced by the 1^st shape modification, while providing PPE data from the device patterns themselves. We believe that a high-quality patterning control (by e.g. optimization of process condition) of MA and MB can be performed only by using such a measurement result. This paper demonstrates and discusses the capability and effectiveness of our newly developed method.

Proceedings Article | 31 March 2014 Paper

Metal1 patterning study for random-logic applications with 193i, using calibrated OPC for litho and etch

Julien Mailfert, Jeroen Van de Kerkhove, Peter De Bisschop, Kristin De Meyer

Proceedings Volume 9052, 90520Q (2014) https://doi.org/10.1117/12.2046782

KEYWORDS: Optical proximity correction, Etching, Tolerancing, Calibration, Logic, Model-based design, Optical lithography, Photomasks, Printing, Inspection

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Proceedings Article | 31 March 2014 Paper

Experimental validation of rigorous, 3D profile models for negative-tone develop resists

Weimin Gao, Ulrich Klostermann, Itaru Kamohara, Thomas Schmoeller, Kevin Lucas, Wolfgang Demmerle, Peter De Bisschop, Julien Mailfert

Proceedings Volume 9052, 90520C (2014) https://doi.org/10.1117/12.2046522

KEYWORDS: 3D modeling, Etching, Atrial fibrillation, Scanning electron microscopy, Semiconducting wafers, Photoresist processing, Data modeling, Calibration, Optical proximity correction, Optical lithography

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Proceedings Article | 28 March 2014 Paper

A fast triple patterning solution with fix guidance

Weiping Fang, Srini Arikati, Erdem Cilingir, Marco Hug, Peter De Bisschop, Julien Mailfert, Kevin Lucas, Weimin Gao

Proceedings Volume 9053, 90530A (2014) https://doi.org/10.1117/12.2046487

KEYWORDS: Optical lithography, Lithium, Logic, Double patterning technology, Manufacturing, Metals, Evolutionary algorithms, System integration, Design for manufacturability, Current controlled current source

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Proceedings Article | 23 March 2012 Paper

3D mask modeling for EUV lithography

Julien Mailfert, Christian Zuniga, Vicky Philipsen, Konstantinos Adam, Michael Lam, James Word, Eric Hendrickx, Geert Vandenberghe, Bruce Smith

Proceedings Volume 8322, 832224 (2012) https://doi.org/10.1117/12.918267

KEYWORDS: Photomasks, Extreme ultraviolet, 3D modeling, Reflectivity, Extreme ultraviolet lithography, Calibration, Semiconducting wafers, Scanners, Mirrors, Visualization

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Proceedings Article | 23 March 2011 Paper

Extending SMO into the lens pupil domain

Monica Kempsell Sears, Germain Fenger, Julien Mailfert, Bruce Smith

Proceedings Volume 7973, 79731B (2011) https://doi.org/10.1117/12.879058

KEYWORDS: Finite element methods, Monochromatic aberrations, Photomasks, Source mask optimization, Diffraction, Wavefronts, Lithography, Spherical lenses, Semiconductors, Binary data

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Proceedings Article | 24 January 2011 Paper

Lateral diffusion of minority carriers in InAsSb-based nBn detectors

Elena Plis, S. Myers, M. Kutty, J. Mailfert, E. Smith, S. Johnson, S. Krishna

Proceedings Volume 7945, 79451R (2011) https://doi.org/10.1117/12.873316

KEYWORDS: Sensors, Diffusion, Mid-IR, Photodetectors, Diodes, Staring arrays, Heterojunctions, Etching, Optical instrument design, Infrared detectors

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Proceedings Article | 28 August 2010 Paper

Performance of InAsSb-based infrared detectors with nBn design

S. Myers, A. Khoshakhlagh, J. Mailfert, P. Wanninkhof, E. Plis, M. Kutty, H. S. Kim, N. Gautam, B. Klein, E. Smith, S. Krishna

Proceedings Volume 7808, 780805 (2010) https://doi.org/10.1117/12.862295

KEYWORDS: Sensors, Doping, Infrared detectors, Etching, Temperature metrology, Measurement devices, Diffusion, Infrared sensors, Mid-IR, Infrared radiation

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Showing 5 of 12 publications

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