The welding of glass using ultrashort laser pulse has attracted much attention due to its potential applications in many fields such as solar cells, implanted microelectronics, OLED, MEMS, micro sensors and so on. However the optical contact which requires a distance between two glasses less than 100 nm is a very harsh requirements in practical engineering applications. A welding method of glass, which adopts bursts sequences of ultrashort laser pulses oscillated in a small region to react more glass material and release heat stress gently, is presented in this paper. In this way, a stable and mild liquid pool with more melt glass can be achieved to weld glasses with large gap. The maximum gap distance between two glasses is almost 40 μm which is an order of magnitude higher than other methods, and the joint strength of the glass weld with the natural contact gap of 10 μm is up to 64 MPa. At last, the encapsulation experiment of the welding glass with a closed area was carried out to prove that the sample can guarantee good sealing in 100 hours.
Laser processing 3-D microstructures inside KDP crystals is an effective way to suppress the transverse stimulated ramam scattering(TSRS)in high power lasers. A simulation study on the transmission characteristics of focused laser inside KDP crystal was carried out to investigate the feasibility of laser processing 3-D microstructures and the effects of laser parameters on the machining accuracy, efficiency and yield. The effects of the peak power density, spot distortion and deviation of laser focus are the main factors on the machining accuracy and crystal fragmentation. The size and shape of the e-ray focus will distort and its peak power density decreases rapidly with the increasing of angle between incident laser and crystal optical axis. The results show that the effect of the e-ray will make the processing efficiency increase more than double when the angle is less than 15°, and can be neglected in the low-energy or easily causes crystal fragmentation in high-energy when the angle is greater than 30°, in this case the e-ray should be shielded. The related simulated results have an important engineering value on increasing the accuracy
of laser micromachining birefringent materials.
During the last decade, diode-pumped solid state (DPSS) lasers have been gained wider application in semiconductor
and electronics industry due to the advantages of high efficiency, low operating cost, good beam quality and flexibility
as well as miniature size. Now, 355nm DPSS UV laser has increasingly been adopted in micro-processing application for
both semiconductor and electronics industry where both micro-processing quality and precision of high-density, multilayer
and multi-material components are in a strong demand. Our works on typical applications of 355nm DPSS UV
laser micro-processing both semiconducting and electronic materials have been introduced in this paper, including
drilling (200μm blind holes in 4-layer FPC), cutting (coverlay, CCL, FPC, 0.6mm silicon), and etching (ITO-glass). The
effects of the processing parameters (pulse energy, frequency, peak power, scanning speed and focal plane position as
well as processing modes) on the micro-processing quality and precision have been investigated and analyzed. By
optimizing the processing parameters, the blind drilling depth to the second copper layer can be controlled accurately and
the roughness Sq 1.33μm on the second copper surface can be achieved. A high quality and size precision (position
precision 20μm) cutting edge without charring, burrs and micro-cracks as well as with very small heat affected zone
(HAZ) can be also obtained. When etching function film, the etching width is less than 20 micron, and the etching speed
is more than 500mm/s.
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