In this work, the extrinsic parasitics of oxide confined 850 nm VCSELs are investigated by two different designs: single mesa with the backside n-contacts (design A) and double mesa with dual-top contact (design B). The static and dynamic characteristics of both designs with about 7 μm aperture are measured and analyzed. The maximum modulation bandwidth of design A is only 15.1 GHz. By utilizing a relatively low dielectric constant BCB layer with the thickness of around 8.7 μm surrounding the two mesas in design B, the pad capacitance value is reduced to only about 9fF which is one third of that in design A. As a result, the modulation bandwidth of design B is significantly increased and reaches to 27 GHz which is a factor of 1.8 higher than that of design A. In addition, the slope efficiency increases for design B with double mesa and dual-top contact structure. Thus, design B is preferred for high-speed VCSELs to obtain good static and dynamic performance.
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