Mr. Karsten Gutjahr Profile

Karsten Gutjahr

Technical Staff at GLOBALFOUNDRIES Inc

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Author

Publications (14)

Proceedings Article | 22 February 2021 Presentation + Paper

Self-referenced and self-calibrated MoiréOVL target design and applications

Cheuk Wun Wong, Neelima Rathi, Taher Kagalwala, Karsten Gutjahr, Patrick Snow, Tony Joung, Tam Vuong, Apollo Marmarinos, Gorby Wan

Proceedings Volume 11611, 1161122 (2021) https://doi.org/10.1117/12.2583733

KEYWORDS: Overlay metrology, Calibration, Signal processing, Optical parametric oscillators, Moire patterns, Metrology, Interference (communication), Target detection, Semiconductor manufacturing, Semiconducting wafers

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Proceedings Article | 26 March 2019 Presentation + Paper

Process drift compensation by tunable wavelength homing in scatterometry-based overlay

Kun Gao, Pedro Herrera, Vidya Ramanathan, Victoria Naipak, Meng Wang, Renan Milo, Tal Yaziv, Nir BenDavid, Chen Dror, Hao Mei, Weihua Li, Xindong Gao, Linfei Gao, Md. Motasim Bellah, Karsten Gutjahr, Dongyue Yang, Cheuk Wun Wong, Xueli Hao, Tony Joung, DeNeil Park, Yue Zhou, Abhishek Gottipati

Proceedings Volume 10959, 1095906 (2019) https://doi.org/10.1117/12.2514548

KEYWORDS: Overlay metrology, Scatterometry, Process control

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Proceedings Article | 26 March 2019 Paper

Process monitoring and control with tunable wavelength overlay coupled with simulation-to-measurement analysis

Pedro Herrera, Kun Gao, Chen Dror, Eitan Hajaj, Alon Alexander Volfman, Raviv Yohanan, Vidya Ramanathan, Victoria Naipak, Renan Milo, Tal Yaziv, Nir BenDavid, Meng Wang, Hao Mei, Weihua Li, Xindong Gao, Dongyue Yang, Cheuk Wun Wong, Karsten Gutjahr, Xueli Hao, Tony Joung, Md. Motasim Bellah, DeNeil Park, Yue Zhou, Abhishek Gottipati

Proceedings Volume 10959, 1095928 (2019) https://doi.org/10.1117/12.2514725

KEYWORDS: Overlay metrology, Metrology, Process control, Semiconducting wafers, Inspection, Optical filters, Polarization, Modeling and simulation, Scatterometry

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Proceedings Article | 20 March 2018 Presentation + Paper

Overlay control for 7nm technology node and beyond

Nyan Aung, Woong Jae Chung, Pavan Samudrala, Haiyong Gao, Wenle Gao, Darius Brown, Guanchen He, Bono Park, Michael Hsieh, Xueli Hao, Yen-Jen Chen, Yue Zhou, DeNeil Park, Karsten Gutjahr, Ian Krumanocker, Kevin Jock, Juan Manuel Gomez

Proceedings Volume 10587, 105870A (2018) https://doi.org/10.1117/12.2295828

KEYWORDS: Overlay metrology, Semiconducting wafers, Optical alignment, Reticles, High volume manufacturing, Metrology, HVAC controls, Optimization (mathematics), Scanners, Extreme ultraviolet

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Proceedings Article | 28 March 2017 Paper

Reducing the overlay metrology sensitivity to perturbations of the measurement stack

Yue Zhou, DeNeil Park, Karsten Gutjahr, Abhishek Gottipati, Tam Vuong, Sung Yong Bae, Nicholas Stokes, Aiqin Jiang, Po Ya Hsu, Mark O'Mahony, Andrea Donini, Bart Visser, Chris de Ruiter, Grzegorz Grzela, Hans van der Laan, Martin Jak, Pavel Izikson, Stephen Morgan

Proceedings Volume 10145, 101452G (2017) https://doi.org/10.1117/12.2257913

KEYWORDS: Overlay metrology, Metrology, Scatterometry, Environmental sensing, Image processing, Diffraction gratings, Diffraction, Chemical mechanical planarization, Defense and security, Image analysis

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Proceedings Article | 24 March 2016 Paper

Root cause analysis of overlay metrology excursions with scatterometry overlay technology (SCOL)

Karsten Gutjahr, Dongsuk Park, Yue Zhou, Winston Cho, Ki Cheol Ahn, Patrick Snow, Richard McGowan, Tal Marciano, Vidya Ramanathan, Pedro Herrera, Tal Itzkovich, Janay Camp, Michael Adel

Proceedings Volume 9778, 97781M (2016) https://doi.org/10.1117/12.2219668

KEYWORDS: Overlay metrology, Semiconducting wafers, Scatterometry, Diffractive optical elements, Metrology, Photovoltaics, Etching, Detection and tracking algorithms, Signal processing, Optical properties

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Proceedings Article | 18 March 2016 Paper

Advanced overlay: sampling and modeling for optimized run-to-run control

Lokesh Subramany, WoongJae Chung, Pavan Samudrala, Haiyong Gao, Nyan Aung, Juan Manuel Gomez, Karsten Gutjahr, DongSuk Park, Patrick Snow, Miguel Garcia-Medina, Lipkong Yap, Onur Nihat Demirer, Bill Pierson, John Robinson

Proceedings Volume 9778, 97782K (2016) https://doi.org/10.1117/12.2218729

KEYWORDS: Semiconducting wafers, Data modeling, Overlay metrology, Metrology, Process control, Scanners, Mathematical modeling, High volume manufacturing

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In recent years overlay (OVL) control schemes have become more complicated in order to meet the ever shrinking margins of advanced technology nodes. As a result, this brings up new challenges to be addressed for effective run-to- run OVL control. This work addresses two of these challenges by new advanced analysis techniques: (1) sampling optimization for run-to-run control and (2) bias-variance tradeoff in modeling. The first challenge in a high order OVL control strategy is to optimize the number of measurements and the locations on the wafer, so that the “sample plan” of measurements provides high quality information about the OVL signature on the wafer with acceptable metrology throughput. We solve this tradeoff between accuracy and throughput by using a smart sampling scheme which utilizes various design-based and data-based metrics to increase model accuracy and reduce model uncertainty while avoiding wafer to wafer and within wafer measurement noise caused by metrology, scanner or process. This sort of sampling scheme, combined with an advanced field by field extrapolated modeling algorithm helps to maximize model stability and minimize on product overlay (OPO). Second, the use of higher order overlay models means more degrees of freedom, which enables increased capability to correct for complicated overlay signatures, but also increases sensitivity to process or metrology induced noise. This is also known as the bias-variance trade-off. A high order model that minimizes the bias between the modeled and raw overlay signature on a single wafer will also have a higher variation from wafer to wafer or lot to lot, that is unless an advanced modeling approach is used. In this paper, we characterize the bias-variance trade off to find the optimal scheme. The sampling and modeling solutions proposed in this study are validated by advanced process control (APC) simulations to estimate run-to-run performance, lot-to-lot and wafer-to- wafer model term monitoring to estimate stability and ultimately high volume manufacturing tests to monitor OPO by densely measured OVL data.

Proceedings Article | 19 March 2015 Paper

HVM capabilities of CPE run-to-run overlay control

Lokesh Subramany, Woong Jae Chung, Karsten Gutjahr, Miguel Garcia-Medina, Christian Sparka, Lipkong Yap, Onur Demirer, Ramkumar Karur-Shanmugam, Brent Riggs, Vidya Ramanathan, John Robinson, Bill Pierson

Proceedings Volume 9424, 94241V (2015) https://doi.org/10.1117/12.2190852

KEYWORDS: Semiconducting wafers, Overlay metrology, Control systems, Optical parametric oscillators, Scanners, Process control, High volume manufacturing, Metrology, Yield improvement, Error analysis

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Proceedings Article | 2 April 2014 Paper

Lithography focus/exposure control and corrections to improve CDU at post etch step

Young Ki Kim, Mark Yelverton, John Tristan, Joungchel Lee, Karsten Gutjahr, Ching-Hsiang Hsu, Hong Wei, Lester Wang, Chen Li, Lokesh Subramany, Woong Jae Chung, Jeong Soo Kim, Vidya Ramanathan, LipKong Yap, Jie Gao, Ram Karur-Shanmugam, Anna Golotsvan, Pedro Herrera, Kevin Huang, Bill Pierson

Proceedings Volume 9050, 90501Y (2014) https://doi.org/10.1117/12.2045433

KEYWORDS: Semiconducting wafers, Etching, Lithography, Finite element methods, Scatterometry, Critical dimension metrology, Factory automation, Scanners, High volume manufacturing, Scatter measurement

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Proceedings Article | 2 April 2014 Paper

Integrated production overlay field-by-field control for leading edge technology nodes

Woong Jae Chung, John Tristan, Karsten Gutjahr, Lokesh Subramany, Chen Li, Yulei Sun, Mark Yelverton, Young Ki Kim, Jeong Soo Kim, Chin-Chou Kevin Huang, William Pierson, Ramkumar Karur-Shanmugam, Brent Riggs, Sven Jug, John Robinson, Lipkong Yap, Vidya Ramanathan

Proceedings Volume 9050, 90501P (2014) https://doi.org/10.1117/12.2046076

KEYWORDS: Scanners, Semiconducting wafers, Overlay metrology, Control systems, Statistical modeling, Error analysis, Data modeling, Optical lithography, Process control, Atomic force microscopy

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Proceedings Article | 10 April 2013 Paper

Lithography focus/exposure control and corrections to improve CDU

Young Ki Kim, Mark Yelverton, Joungchel Lee, Jerry Cheng, Hong Wei, Jeong Soo Kim, Karsten Gutjahr, Jie Gao, Ram Karur-Shanmugam, Pedro Herrera, Kevin Huang, Roie Volkovich, Bill Pierson

Proceedings Volume 8681, 86811P (2013) https://doi.org/10.1117/12.2011534

KEYWORDS: Semiconducting wafers, Finite element methods, Lithography, Scatterometry, Critical dimension metrology, Scanners, Factory automation, Scatter measurement, Metrology, Process control

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Proceedings Article | 24 March 2009 Paper

Overlay mark optimization using the KTD signal simulation system

Anat Marchelli, Karsten Gutjahr, Michael Kubis, Christian Sparka, Mark Ghinovker, Alessandra Navarra, Amir Widmann

Proceedings Volume 7272, 72722Y (2009) https://doi.org/10.1117/12.813594

KEYWORDS: Image segmentation, Signal processing, Semiconducting wafers, Metals, Overlay metrology, Metrology, Photomasks, Databases, Optical design, Data modeling

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Proceedings Article | 20 October 2006 Paper

Inspectability and printability of lines and spaces halftone masks for the advanced DRAM node

Arndt Dürr, Karsten Gutjahr, Jan Heumann, Martin Stengl, Frank Katzwinkel, Andreas Frangen, Thomas Witte

Proceedings Volume 6349, 63493O (2006) https://doi.org/10.1117/12.693061

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Printing, Scanning electron microscopy, Critical dimension metrology, Manufacturing, Halftones, Solids

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Proceedings Article | 16 June 2005 Paper

Defect printability and inspectability of halftone masks for the 90nm and 70nm node

Karin Eggers, Karsten Gutjahr, Milko Peikert, Dieter Rutzinger, Ralf Ludwig, Michael Kaiser, Arndt Durr, Jan Heumann

Proceedings Volume 5835, (2005) https://doi.org/10.1117/12.637328

KEYWORDS: Inspection, Photomasks, Semiconducting wafers, Printing, Defect detection, Defect inspection, Halftones, Scanning electron microscopy, Critical dimension metrology, Reflectivity

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Showing 5 of 14 publications

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