Dr. Katia Devriendt Profile

Dr. Katia Devriendt

at imec

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Author

Publications (3)

Proceedings Article | 13 June 2022 Presentation

MOL patterning challenges in scaled SRAM with vertical Surrounding Gate Transistors (SGT)

Zheng Tao, Yisuo Li, Waikin Li, Minsoo Kim, Basoene Briggs, Katia Devriendt, Lieve Teugels, Farid Sebai, Christophe Lorant, Clement Porret, Erik Rosseel, Alfonso Sepúlveda Márquez, Nicolas Jourdan, Juergen Boemmels, Jerome Mitard, Philippe Matagne, Efrain Altamirano-Sánchez, Lars-ake Ragnarsson, Anish Dangol, Dmitry Batuk, Gerardo Tadeo Martinez Alanis, Jef Geypen, Kenichi Kanazawa, Testuo Izawa, Masakazu Kakumu, Koji Sakui, Nozomu Harada

Proceedings Volume PC12056, PC120560B (2022) https://doi.org/10.1117/12.2614772

KEYWORDS: Optical lithography, Metals, Etching, Transistors, Atomic layer deposition, Silica, Inspection, Electrodes, Transmission electron microscopy, System on a chip

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Proceedings Article | 25 May 2022 Presentation + Paper

Buried power rail integration for CMOS scaling beyond the 3 nm node

A. Gupta, Z. Tao, D. Radisic, H. Mertens, O. Varela Pedreira, S. Demuynck, J. Bömmels, K. Devriendt, N. Heylen, S. Wang, K. Kenis, L. Teugels, F. Sebaai, C. Lorant, N. Jourdan, B. Chan, S. Subramanian, F. Schleicher, A. Peter, N. Rassoul, Y. Siew, B. Briggs, D. Zhou, E. Rosseel, E. Capogreco, G. Mannaert, A. Sepúlveda, E. Dupuy, K. Vandersmissen, B. Chehab, G. Murdoch, E. Altamirano Sanchez, S. Biesemans, Zs. Tőkei, E. Dentoni Litta, N. Horiguchi

Proceedings Volume 12056, 120560B (2022) https://doi.org/10.1117/12.2615641

KEYWORDS: Ruthenium, Metals, Molybdenum, Etching, Tungsten, Front end of line, Chemical mechanical planarization, Silicon

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Proceedings Article | 20 March 2019 Paper

Fabrication challenges and opportunities for high-mobility materials: from CMOS applications to emerging derivative technologies

N. Collaert, A. Alian, B. De Jaeger, U. Peralagu, A. Vais, A. Walke, L. Witters, H. Yu, E. Capogreco, K. Devriendt, T. Hopf, K. Kenis, G. Mannaert, A. Milenin, A. Peter, F. Sebaai, L. Teugels, D. van Dorp, K. Wostyn, N. Horiguchi, N. Waldron

Proceedings Volume 10963, 1096305 (2019) https://doi.org/10.1117/12.2511746

KEYWORDS: Germanium, Gallium nitride, Gallium arsenide, CMOS technology, Field effect transistors, Fin field effect transistors, Group III-V semiconductors

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