Dr. Katja Steidel Profile

Dr. Katja Steidel

Dept Manager at Advanced Mask Technology Ctr GmbH Co KG

Publications (6)

Proceedings Article | 3 October 2018 Presentation + Paper

Multiple exposure on single blank for electron-beam writer characterization

André Eilert, Michael Finken, Christian Bürgel, Mark Herrmann, Ronald Hellriegel, Rico Nestler, Oliver Löffler, Frank Hübenthal, Rico Büttner, Katja Steidel

Proceedings Volume 10810, 108101G (2018) https://doi.org/10.1117/12.2501760

KEYWORDS: Photoresist processing, Photomasks, Critical dimension metrology, Critical dimension scanning electron microscopy, Electrons, Materials processing, Thin films, Scatterometry, Optical proximity correction, Electron beam lithography, Electron beams

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Proceedings Article | 8 March 2016 Paper

Patterning and imaging with electrons: assessing multi-beam SEM for e-beam structured CMOS samples

Tomasz Garbowski, Friedhelm Panteleit, Gregor Dellemann, Manuela Gutsch, Christoph Hohle, Elke Reich, Matthias Rudolph, Katja Steidel, Xaver Thrun, Dirk Zeidler

Proceedings Volume 9778, 97781V (2016) https://doi.org/10.1117/12.2225501

KEYWORDS: Electrons, Defect inspection, Semiconducting wafers, Scanning electron microscopy, Inspection, Wafer inspection, Semiconductors, Electron beams, Metals, Tin, Electron beam lithography, Image processing, Sensors

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Proceedings Article | 19 March 2015 Paper

Verification of E-Beam direct write integration into 28nm BEOL SRAM technology

Christoph Hohle, Kang-Hoon Choi, Manuela Gutsch, Norbert Hanisch, Robert Seidel, Katja Steidel, Xaver Thrun, Thomas Werner

Proceedings Volume 9423, 94231B (2015) https://doi.org/10.1117/12.2087612

KEYWORDS: Metals, Semiconducting wafers, Electron beam lithography, Etching, Electron beam direct write lithography, Photomasks, Optical alignment, Wafer-level optics, Back end of line, Electron beams

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Electron beam direct write lithography (EBDW) potentially offers advantages for low-volume semiconductor manufacturing, rapid prototyping or design verification due to its high flexibility without the need of costly masks. However, the integration of this advanced patterning technology into complex CMOS manufacturing processes remains challenging. The low throughput of today’s single e-Beam tools limits high volume manufacturing applications and maturity of parallel (multi) beam systems is still insufficient [1,2]. Additional concerns like transistor or material damage of underlying layers during exposure at high electron density or acceleration voltage have to be addressed for advanced technology nodes. In the past we successfully proved that potential degradation effects of high-k materials or ULK shrink can be neglected and were excluded by demonstrating integrated electrical results of 28nm node transistor and BEOL performance following 50kV electron beam dry exposure [3]. Here we will give an update on the integration of EBDW in the 300mm CMOS manufacturing processes of advanced integrated circuits at the 28nm SRAM node of GLOBALFOUNDRIES Dresden. The work is an update to what has been previously published [4]. E-beam patterning results of BEOL full chip metal and via layers with a dual damascene integration scheme using a 50kV VISTEC SB3050DW variable shaped electron beam direct writer at Fraunhofer IPMSCNT are demonstrated. For the patterning of the Metal layer a Mix & Match concept based on the sequence litho - etch -litho -etch (LELE) was developed and evaluated wherein several exposure fields were blanked out during the optical exposure. Etch results are shown and compared to the POR. Results are also shown on overlay performance and optimized e-Beam exposure time using most advanced data prep solutions and resist processes. The patterning results have been verified using fully integrated electrical measurement of metal lines and vias on wafer level. In summary we demonstrate the integration capability of EBDW into a productive CMOS process flow at the example of the 28nm SRAM technology node.

Proceedings Article | 17 October 2014 Paper

Integration of e-beam direct write in BEOL processes of 28nm SRAM technology node using mix and match

Manuela Gutsch, Kang-Hoon Choi, Norbert Hanisch, Christoph Hohle, Robert Seidel, Katja Steidel, Xaver Thrun, Thomas Werner

Proceedings Volume 9231, 92310F (2014) https://doi.org/10.1117/12.2067884

KEYWORDS: Metals, Etching, Semiconducting wafers, Optical alignment, Electron beam direct write lithography, Photomasks, Back end of line, Electron beam lithography, Scanning electron microscopy, Electron beams

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Proceedings Article | 29 March 2013 Paper

Effects on electron scattering and resist characteristics using assisting underlayers for e-beam direct write lithography

Xaver Thrun, Kang-Hoon Choi, Norbert Hanisch, Christoph Hohle, Katja Steidel, Douglas Guerrero, Thiago Figueiro, Johann Bartha

Proceedings Volume 8682, 86820Z (2013) https://doi.org/10.1117/12.2011461

KEYWORDS: Silicon, Semiconducting wafers, System on a chip, Aluminum, Titanium, Scattering, Point spread functions, Metals, Neodymium, Electron beam lithography

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Proceedings Article | 26 March 2013 Paper

Influence of high-energy electron irradiation on ultra-low-k characteristics and transistor performance

Katja Steidel, Kang-Hoon Choi, Martin Freitag, Manuela Gutsch, Christoph Hohle, Robert Seidel, Xaver Thrun, Thomas Werner

Proceedings Volume 8680, 86801A (2013) https://doi.org/10.1117/12.2011467

KEYWORDS: Back end of line, Transistors, Semiconducting wafers, Dielectrics, Oxides, Resistance, Copper, Electron beam lithography, Capacitance, Metals

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Showing 5 of 6 publications

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