The development process is important to lithography, particularly as the size of pattern features continues to shrink. The traditional developer, tetramethylammonium hydroxide (TMAH), has faced challenges with these reductions in size. The quartz crystal microbalance (QCM) method is commonly employed to measure the dissolution rate of the resist. Additionally, changes in the impedance of QCM can monitor energy loss during development. However, the potential of impedance information has not been fully exploited. This study uses simulation to analyze the changes in frequency and impedance throughout the development process, focusing on the diffusion process of polymer molecules. The reproduction of QCM charts revealed that impedance can provide insights not only into the dissolution rate of the resist but also into the viscosity near the interface between the developer and the top layer of the resist. Moreover, the diffusion constant of polymer molecules in developers can also be estimated for various developers.
For the advancement of lithography, the resist materials and processes are the most critical issue in the microfabrication of semiconductors. Especially in the sub-20nm half pitch resolution region, the development process of resist materials is of particular importance from the viewpoint of reducing the line width roughness (LWR) and stochastic defects. In this study, a quartz crystal microbalance (QCM) method was used to investigate the dissolution dynamics of poly(4-hydroxystyrene-co-methacrylic acid) (PHSMA) films in tetraalkylammonium hydroxide aqueous solutions. The PHSMA film showed a characteristic dissolution kinetics in tetraalkylammonium hydroxide aqueous solutions, which was not observed for poly(4-hydroxystyrene) film.
To investigate the development kinetics, this study categorized the dissolution dynamics in tetraalkylammonium hydroxide (TAAH) aqueous solutions into six classes based on frequency and impedance variations during the development process using quartz crystal microbalance (QCM) measurements. These classifications were examined against various material attributes via decision trees and support vector machine (SVM) models. The feature values included in this analysis comprised the length of alkyl chains, molecular weight, solute concentration, viscosity of developers, protection ratios, molar masses, contact angles, and surface free energy of polymer. Accuracy for the test dataset was approximately 0.80 and 0.75 for the decision trees and SVM, respectively, when validated.
For the advancement of lithography, the resist materials and processes are the most critical issue in the microfabrication of semiconductors. Especially in the sub-20 nm half pitch resolution region, the development process of resist materials is of particular importance from the viewpoint of reducing the line width roughness (LWR) and stochastic defects. In this study, a quartz crystal microbalance (QCM) method was used to investigate the dissolution dynamics of poly(4-hydroxystyrene) (PHS) films containing triphenylphosnium-nonaflate (TPS-nf) in tetraalkylammonium hydroxide aqueous solutions. The comparison of dissolution dynamics in five different developer solutions with different alkyl chain lengths was done.
Recently chemically amplified resists are approaching their performance limits due to the fixed development process. In this study, the dissolution, swelling, and impedance change of resist polymers were measured by a development analyzer with a quartz crystal microbalance method. The resist polymer was poly(4-hydroxystyrene) (PHS), the hydroxyl groups of which were partially protected with t-butoxycarbonyl groups. The alkyl chain lengths of tetraalkylammonium hydroxide were varying from methyl to pentyl groups. When the alkyl chain length of TAAH increased from two to three, the dissolution mode markedly changed.
The dissolution (including the formation of transient swelling layer) of a resist polymer is key to the realization of ultrafine patterning. However, the details of the dissolution of resist polymers remain unclarified. In this study, the swelling and dissolution kinetics of poly(4-hydroxystyrene) (PHS) film in pure water and alkaline aqueous solution were investigated. PHS is a typical backbone polymer (a dissolution agent) of chemically amplified resists. By changing the length of alkyl chains of amines, the swelling and dissolution kinetics of PHS were observed. Their dependences on the film thickness of PHS and the concentration of amines were discussed.
The crack length measurement method using an ion-sputtered film, proposed by the authors based on the change in the
electric resistance of the film during the crack growth, was applied to the small crack growing in soda lime glass and
alumina ceramics. Since the measurement system can record the electric resistance of the ion-sputtered film at a high
sampling frequency of 125kHz, the crack lengths was measured almost continuously, and the relationship between the
crack growth rate and the stress intensity factor were obtained in the whole regions from low crack growth rate to brittle
fracture. The growth characteristics of the small crack under 1mm in alumina ceramics are clarified to be different from
that of the large crack in the same materials; for example, the n values, which is defined as the constant in the Paris law
relating the crack growth rate to the stress intensity factor, in the soda lime glass and the alumina ceramics obtained by
this research are 74 to 96 and 530 to 580 respectively in the region I, and 12 to 15 and 17 to 25 respectively in the region
II, that are different from the values obtained from a large crack, especially for the alumina ceramics.
As for CD (Critical Dimension) control, we classified factors of CD variations in each process. We quantified the factors occurred in the devices such as exposure tool, coater/developer and CD-SEM in 193nm lithography. In the coater/developer, influence of PEB (Post Exposure Bake) on CD variation was notably found and made up about 70% of the Track-related factors. This fact indicates that a great importance of PEB in 193nm process. Regarding the exposure tool, we quantified the CD variations caused by Flare using Kirk method. We determined that this issue was influenced by the exposure field layout, and the variation of intra wafer was 1.58nm. As for a CD-SEM, we measured the CD variations caused by the electron beam-induced CD shrink, and LWR (Line Width Roughness). The LWR accounts for about 40% of the total measurement errors, and affects CD variations higher as finer line pattern. We reduced influence of LWR on CD variations by extending measurement points and averaging. Thus we acquired the CD uniformity close to the actual CD.
In recent years, more precise pattern dimension control (CD control) on a photomask has been required than ever as finer-line of IC pattern progresses. In the case of the conventional development (spray-development, puddle-development), CD control is difficult due to loading and micro-loading effect. The "loading and micro-loading effect" refers to the differences of exposed area around the pattern.
The low pattern density generates numerous dissolution products and decreases the concentration of developer. This phenomenon changes resist dissolution rate and causes difficulties in controlling the CD. To solve this problem, we have been developing a new type of developer, called "Proximity Gap Suction Development (PGSD)." Nozzle of PGSD has five slits; opening for supplying developer is in the center, two suction slits are on the both sides, and two slits for rinse are on the very end. The proximity gap is kept between the nozzle surface and resist during development. Contaminated developer is immediately sucked/removed and stable development can be achieved by the continuous dispense of fresh developer at high speed. Thus, a desired pattern size can be obtained without loading and micro loading effect. We reported the principle of PGSD at BACUS in 2002. In this thesis, we would like to report the following topics.
(1) System overview of α machine, which we are currently developing.
(2) Effect of the PGSD on CD uniformity and the number of defects.
Recently semiconductor manufacturers have strived to continuously introduce new products with smaller circuit designs. With this in mind, we are required to improve critical dimension (CD) control during development. Resist reacts with TMAH to swell and dissolve in developer solution. During this time, dissolution products are created in and around the exposed area. The behavior of dissolution products is a factor that varies CD in the development process. The dissolution products diffuse into the developer solution. As one of the developer methods to eliminate the influence of dissolution products, the authors substituted the dissolved resist with a large amount of unreacted, remaining developer solution. This “Optimized Spin-off Develop Method” lessened the influence of dissolved resist compared to other normal development methods. Detailed evaluations, however, revealed that dissolution products were not able to be completely removed. Moreover, the swelled resist dissolved again during static development. As a result, it was observed that dissolution of the residuals affected the development process. To remove the dissolution products completely we established a novel development method. Using this method, we were able to eliminate dissolution products, resulting in minimization of CD variation.
CDs of photomasks include errors caused by photomask-making processes, namely, writing process, baking process in chemically amplified resist, resist development process, and etching process. Recently, the conventional resist develop methods, such as spray development, have raised issues concerning uneven pattern density on photomasks. Dependency of resist coverage is caused by low solubility of developer containing dissolved resist. In the ideal development process, only fresh developer would be on the resist surface at all times. To realize this ideal development process, we propose a development method, Proximity Gap Suction Development (PGSD), based on a new concept. PGSD involves the use of a scanning nozzle having five slits located in its surface facing the resist surface, a scanning mechanism keeping proximity gap between resist surface and the nozzle surface with slits, and a photomask holder. The nozzle is scanned from end to end of photomask on the holder. Developer spouts from a center slit of the nozzle. Slits at both sides of the center slit suck developer on resist surface with rinse fluid spouting from slits located outside of suction slits on the nozzle. Because proximity gap is kept between resist surface and the nozzle surface, spouted fresh developer reaches resist surface directly and it runs over resist surface at high speed. Then, developer on resist surface is excluded immediately with rinse fluid by suction slits. PGSD can produce CDs of resist pattern controlled precisely on photomask having uneven pattern density. We report details of the PGSD system, and compare the results for CDs obtained by PGSD with those obtained using the conventional method.
The loading effect is becoming a great issue in mask fabrication. To reduce CD error due to resist load, we have developed a developer based on a new concept, Proximity Gap Suction Development (PGSD), involving the use of a nozzle to spout developer and suck in dirty developer. In this paper, the performance of PGSD is reported.
A loading effect in particular is accounting for an increasing percentage of factors responsible for CD variations. A multi-puddle method in development process therefore is considered a solution of this problem. However, the method consumes large amounts of developer solution. In this paper, we have studied the influence of loading effect on CD and evaluated several development methods to minimize the influence. In this paper, we evaluated the correlation between the width of exposed area and CD in the device area. Based on this result, we estimated the diffusion range of dissolution products. We also found another phenomenon that CD uniformity within a wafer became worse when each pattern was surrounded by an unexposed area. A novel development method we have evaluated in this study is as follows: (1) perform a puddle formation normally; (2) after a short static development, spin off developer solution from the puddle; and (3) after the puddle is decreased in volume, perform a rather long static development. This new method proved to have the capability of minimizing the influence of dissolution products.
When using KrF resists, a peculiarity in critical dimensions (CDs) called developer nozzle traces is often observed (figure 2). We have determined and solved the cause of this problem. We calculated the flow rate of the developer solution per unit area at various points on a wafer, which was dispensed using a conventional nozzle (Figure 1). We discovered that the flow rate per unit area varied significantly across a wafer. We determined that areas of the wafer getting high developer flow rates had narrower CDs than other areas. We concluded that the cause of developer nozzle traces was due to a flow rate imbalance. We examined in detail the correlation between the amount of developer solution dispensed on a wafer and the line width, and found that the line width was narrowed when the amount of developer dispensed was 0.4 ml/cm2 or greater (Shipley UV6) (figure 7). From this result, it appears that the nozzle traces are related to the distribution of flow rate and that of CD. In addition, the profile of the top of the pattern differs depending on the developer flow rate. At high rates, the profile becomes rounded while at lower rates the profile is rectangular. Taking all of these observations into consideration, we invented a nozzle that dispenses developer uniformly over an entire wafer. The opening of this nozzle is slit-like in shape and extends over the entire wafer diameter. For full puddle formation, the nozzle dispenses developer solution while scanning linearly across a wafer. The wafer is stationary and does not rotate during this process. This nozzle system dispenses a uniform volume of developer per unit area over an entire wafer (figure 10). In order to achieve good puddling, developer dispense rate and nozzle scan rate have been optimized to minimize the movement of developer solution. At this time, the amount of developer dispensed over the wafer surface was 0.2 ml/cm2. We evaluated CD measurements using this nozzle and obtained very slight CD variation within a wafer 3 sigma = 6nm 180nm L/S (figure 14). Finally we found out that making the dispense flow rate of the developer solution equal and low per unit area is critical for CD control. By reducing the flow rate of the developer, the profile of the feature becomes rectangular compared to when using a conventional nozzle (figure 13).
This paper describes about a method to improve immunity
from the environment of the flint glass fiber Faraday effect
current sensor. Principle of the method is reciprocation of
light in the fiber. From the result of experiment it was
confirmed that stable properties can be realized by applying
the method.
The basic system of the optical fiber-type Faraday effect current sensor for
electric power apparatus has been developed. According to the experiments, it became
clear that the developed system showed excellent polarization characteristics and small tempereture dependence. Though the vibration dependent fluctuation of the output is observed, a remedy is suggested.
This paper describes polarization properties of the flint glass fiber for Faraday sensor element. Measurement results showed very small birefringence of the fiber, and good agreement with a model to describe relation between polarization and geometrical figure of the fiber.
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