We present the realization of low-absorptive GaN waveguide for cost-effective, ultra-compact visible light Photonic Integrated Circuit (PICs) applications. Within this framework, in order to achieve on chip fabrication of both active and passive parts on GaN platform, we realized the well-defined sensitivity of indium incorporation to InGaN layers (Quantum wells) to substrate misorientation during epitaxial growth of device structure with MOCVD. Fabrication of GaN waveguides on locally high misoriented areas (1 degree- 4 degree) coupled with neighboring laser diodes on flat areas (0.2 degree) allowed us to locally shift the absorption edge of InGaN quantum wells enabling efficient light transmission through the fabricated waveguides.
Our goal is to fabricate a laser diode 2D array which combines the properties of both VCSEL and edge emitting laser. Proposed light emitter will have a horizontal cavity with 450 deflectors. The role of these deflectors would be to deflect light perpendicular to the cavity, achieving vertical out-coupling. The most challenging part of this project is the fabrication of the micro-mirrors which act as both as beam deviating mirrors and cavity forming mirrors. Owing to the excellent thermal conductivity of GaN substrates the properties of such a 2D array should be better than of conventional nitride laser diode arrays, not even mentioning nitride-based stacked bars systems. In this paper I will describe our new device design and processing, giving insight to its possible applications and advantages over simple light emitting laser diode.
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