The lithography process in semiconductor manufacturing demands precise control over focus and exposure parameters to achieve optimal lithographic outcome for the structures being printed. It has become increasingly important to fully characterize the resist (3 dimensional) profile after development, since it is known that the optimum focus level and exposure dose may differ according to the parameter in question. For example, the optimal settings for CD and for minimizing stochastics effects may not be the same. In this study, we demonstrate the use of Rapid Probe Microscopy (RPM) to evaluate a Focus-Exposure-Matrix (FEM) in EUV lithography. RPM offers deep sub nanometre resolution and true 3-dimensional measurement, enabling the characterisation of variations critical to the lithographic process.
Atomic Force Microscopy (AFM) is a proven technique applied in research environments, most commonly in materials science and biological research. More recently, requirements in semiconductor manufacturing advocate that probe microscopy has potential to assist with the new metrology techniques associated with device scaling and the corresponding increase in 3D structures. In this paper a novel form of AFM called the Rapid Probe Microscope (RPM) will be demonstrated operating at high data acquisition rates; with images collected in seconds, combined with the ability to characterise individual 3D structures with sub nanometre accuracy. The capability of the RPM will be illustrated by measuring a suite of 2D EUV posts of 26nm dimension in staggered topology with 40nm minimum pitch. These structures were developed as part of IMEC’s EUV lithography patterning development program. The high throughput of the RPM enables the collection of multiple site and multiple pitch data, from a focused exposure matrix. Automated batch processing tools have been developed to enable the effective analysis of the high volume of data produced. The data can then be extensively interrogated to fully understand how the structure of the posts is related to the lithography process. In addition to a statistical analysis of the entire pillar population, the analysis tools can isolate and measure each individual pillar, providing the ability to compare the height and shape on an isolated pillar by pillar bases.
The Rapid Probe Microscope (RPM), exists as an integrated solution for photomask repair, with its application extended to include wafer metrology in 2016 [1]. The RPM can acquire non-destructive, high resolution, sub-nm detail in all 3 dimensions, overcoming some of the limitations of conventional AFM. In addition, it is flexible and can be configured to run either in air or in vacuum. The RPM includes the innovative use of an interferometric detection system to simultaneously measure both the height and the deflection of the cantilever, while the probe is controlled through photo thermal actuation. This combination delivers an accurate, very fast, direct measurement of the height of the probe and the corresponding structure of the sample surface. The X,Y probe scanner movement is also monitored by an interferometer. This guarantees both the linearity and XY position of the probe tip, delivering a corresponding sub-nm metrology of the wafer structure.
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