We report the terahertz (THz) emission from Bi1-xSbx/Co and Bi2SnTe4/Co bilayers including nanometer-thin ferromagnetic layer as spin-injectors and Bi1-xSbx and Bi2SnTe4 topological insulators (TI) from the Bi family grown by molecular beam epitaxy. Using THz emission spectroscopy, an efficient dynamical spin-to-charge conversion in the sub-picosecond timescale is demonstrated in these heterostructures with an output THz amplitude sizeable compared to reference metallic spintronic THz emitters. We investigate TI thickness dependence and azimuthal crystalline orientation dependence on the THz emission which are both in line with interfacially-mediated interconversion. We show that a strong reminiscent THz signal at the limit of small TI thickness is explained by a spin-charge interconversion occurring at the level of the first planes of their interface in contact with Co. This strongly suggests a spin-charge interconversion via inverse Rashba-Edelstein effect (IREE) onto spin-locked TI’s interface states.
THz emission spectroscopy reveals to be a very powerful experimental method to investigate the properties of Rashba or topological insulator surface states. The THz emission can be also used in heavy metallic or in more general Rashba systems. We prove here the ability of the present method. In 3d/5d transient metal bilayers and beyond heavy metal structures, Rashba states and Topological insulators are expected candidates for spintronic-terahertz domains due to their high spin to charge conversion properties. In this scheme, we are interested in the samples based on 2D electron gas, topological insulators and Heusler alloys with strong spin-orbit coupling.
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