Nanohole array surface plasmon resonance (SPR) sensors offer a promising platform for high-throughput label-free biosensing. Integrating nanohole arrays with group-IV semiconductor photodetectors could enable low-cost and disposable biosensors compatible to Si-based complementary metal oxide semiconductor (CMOS) technology that can be combined with integrated circuitry for continuous monitoring of biosamples and fast sensor data processing. Such an integrated biosensor could be realized by structuring a nanohole array in the contact metal layer of a photodetector. We used Fouriertransform infrared spectroscopy to investigate nanohole arrays in a 100 nm Al film deposited on top of a vertical Si-Ge photodiode structure grown by molecular beam epitaxy (MBE). We find that the presence of a protein bilayer, constitute of protein AG and Immunoglobulin G (IgG), leads to a wavelength-dependent absorptance enhancement of ~ 8 %.
The aim of integrating plasmonic functionality with photonic devices is twofold: on the one hand, plasmonic
nanoantennas can enhance the functionality of photonic devices and enable their miniaturization. On the other hand,
photonic devices can be a part of plasmonic transmission lines and act e.g. as plasmon detectors. Here, we present results
on both aspects in a CMOS-compatible device setup using Ge PIN-photodetectors and Al nanostructures. Plasmonic
nanoantennas are metallic nanostructures that enable the control and manipulation of optical energy in the visible and
near-infrared spectrum and have been proposed as a means to enhance absorption and quantum yields for photovoltaics,
to increase spatial resolution for optical microscopes and to enhance the energy efficiency of light-emitting devices. We
present experimental results on the enhancement of Ge PIN-photodetector efficiency by Al nanoantennas. In order to
investigate plasmon waveguiding and detection, metal grating structures and metal-insulator-metal slot waveguides were
fabricated by electron beam lithography in the Al metallization layer of Ge PIN-photodetectors. Photocurrent maps of
the devices under local illumination show that plasmons can be optically excited at the grating and are then guided by the
slot waveguide towards the Ge PIN-photodetector where they are detected as photocurrent. Using Ge PIN-photodetectors
and Al nanostructures as a CMOS-compatible device setup, we show how plasmonic nanostructures can be used for
efficiency enhancement of photonic devices and discuss plasmon detection with Ge PIN-photodetectors with possible
applications.
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