We report on our development strategy of photo-curable resists for nanoimprint lithography (NIL) based on modularity. Starting with a basic formulation, we address two topics: the integration of fluorinated additives and the enhancement of the dry etching stability. We prove both concepts by the introduction of two different resists derived from the same basic formulation. The viscosity of the novel resist materials was optimized for inkjet dispensing at room temperature (RT). The novel resist materials can be applied either in NIL batch processes or in high-throughput roller processes. Batch-wise imprints were performed on various substrates such as Si or plastics, demonstrating the distinctive application versatility of the novel materials. Dry etching of spin-coated thin films on Si wafers was performed, demonstrating an etch stability versus Si of 3.5:1 by using the resist formulation with improved etching stability. Roll-to-roll NIL at high throughput on large areas was performed with web speeds of up to 30 m min−1 with different stamp materials. We conclude that all resists reported herein can be deposited via inkjet dispensing at RT, are suitable for continuous high-throughput imprinting on flexible substrates, and are applicable in step-wise NIL processes with good etch resistance in dry etch processes.
One example of organic electronics is the application of polymer based light emitting devices (PLEDs). PLEDs are very attractive for large area and fine-pixel displays, lighting and signage. The polymers are more amenable to solution processing by printing techniques which are favourable for low cost production in large areas. With phosphorescent emitters like Ir-complexes higher quantum efficiencies were obtained than with fluorescent systems, especially if multilayer stack systems with separated charge transport and emitting layers were applied in the case of small molecules. Polymers exhibit the ability to integrate all the active components like the hole-, electron-transport and phosphorescent molecules in only one layer. Here, the active components of a phosphorescent system – triplet emitter, hole- and electron transport molecules – can be linked as a side group to a polystyrene main chain. By varying the molecular structures of the side groups as well as the composition of the side chains with respect to the triplet emitter, hole- and electron transport structure, and by blending with suitable glass-forming, so-called small molecules, brightness, efficiency and lifetime of the produced OLEDs can be optimized. By choosing the triplet emitter, such as iridium complexes, different emission colors can be specially set. Different substituted triazine molecules were introduced as side chain into a polystyrene backbone and applied as electron transport material in PLED blend systems. The influence of alkyl chain lengths of the performance will be discussed. For an optimized blend system with a green emitting phosphorescent Ir-complex efficiencies of 60 cd/A and an lifetime improvement of 66.000 h @ 1000 cd/m2 were achieved.
The high throughput and large area nanostructuring of flexible substrates by continuous roller processes has great potential for future custom applications like wire grid polarizers, antireflection films, or super-hydrophobic surfaces. For each application different material characteristics have to be considered, e.g. refractive index, hydrophobicity, or dry etch stability. Herein, we show experimental results of nanoimprint lithography resist developments focused on inkjetable and photo-curable resists suitable for high throughput production, especially roll-to-roll NIL. The inkjet deposition of the novel materials is demonstrated by the use of different state-of-the-art inkjet printheads at room temperature. A plate-to-plate process on silicon substrates was successfully implemented on a NPS300 nano patterning stepper with previously inkjet dispensed NIL resist. Furthermore, we demonstrate a throughput of 30 m min-1 in a roller NIL process on PET. Dry etching of unstructured thin films on Si wafers was performed, and it was demonstrated that the etch stability in Si is tunable to a value of 3.5:1 by a concise selection of the resist components. The surface roughness of the etched films was measured to be < 2 nm, after etching of around 100 nm of the resist films what is an essential factor for a low line edge roughness. All resists reported herein can be deposited via inkjet dispensing at room temperature, are suitable for continuous high throughput imprinting on flexible substrates, and are applicable in step-wise NIL processes with good etch resistance in dry etch processes.
The aim of this work is to develop some new polymer materials with typical n-type semiconducting properties and low reduction peak potentials. Therefore new organo-soluble copolyquinoxalines were used in polymer blends with poly-[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenvinylene] or regioregular poly-(3-hexylthiophene). The photovoltaic properties of these polymer blends depend on the blend morphology. So the short circuit current density can be improved by better solvent mixtures and by temper processes. But nevertheless the photovoltaic properties are low and a stable and well ordered phase morphology is difficult to obtain with polymer blend systems. Therefore another approach to receive more effective full polymer photovoltaic cells was done. Block copolymers consisting of n-type and p-type sequences in one polymer chain were synthesized. As n-type material a quinoline monomer and as p-type material 3-hexylthiophene were used. The synthesis of these new materials is described. The spectroscopic and cyclovoltammetric investigations clearly indicate their block copolymer structure. The study of their phase morphology and photovoltaic properties is in progress.
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