Micro-transfer printing of thin-film lithium niobate (TFLN), as a backend integration method, enables selective and localized placement of TFLN to silicon platform, facilitating the creation of complex, multi-material systems that combine lithium niobate with other components. In this study, we investigate the transfer printing technique for TFLN. We present experimental results from hybrid silicon-LN devices created using this method, including micro-transfer printed ring modulators, photonics crystal (PhC) modulators, and Bragg Grating modulators, among others.
Lithium niobate photonics provides a low-loss platform with great properties for high-speed modulation, wavelength conversion and quantum optics. Micro-transfer printing allows scalable integration with CMOS compatible silicon photonics technologies.
Photonic integrated circuits enable the miniaturization of photonic systems by integrating key optical functions on a chip. While CMOS compatible silicon and silicon nitride are very efficient platforms for passive circuits, they lack active key functionalities for the realization of a full system on a chip. A versatile solution is to use micro-transfer printing for heterogeneous integration of active devices on such platforms. Here we present the recent advances of micro-transfer printing on silicon nitride and discuss the remaining challenges.
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