Ga2O3 micro- and nanowires-based optical microcavities have been obtained by patterning pairs of distributed Bragg reflectors (DBRs) with a focused ion beam (FIB) microscope. DBRs result in widely tunable high reflectivity bands. The microcavities have been designed and optimized with the aid of simulations and optically characterized by micro-photoluminescence. Tunable strong modulations are confirmed in the NUV-blue as well as in the red-NIR ranges for unintentionally doped and chromium doped wires, respectively. Experimental, analytical and simulations results will be compared and some possible applications of these cavities will be assessed.
On one hand, interest on the tunability of the optical microcavities has increased in the last few years due to the need for selective nano- and microscale light sources to be used as photonic building blocks in several applications. On the other, transparent conductive oxide (TCO) β-Ga2O3 is attracting attention in the optoelectronics area due to its ultra wide band gap and high breakdown field. However, at the micro- and nanoscale there are still some challenges to face up, namely the control and tuning of the optical and electrical properties of this oxide. In this work, Cr doped Ga2O3 elongated microwires are grown using the vapor-solid (VS) mechanism. Focused Ion Beam (FIB) etching forms Distributed Bragg Reflector (DBR)-based resonant microcavities. Room temperature microphotoluminescence (μ-PL) spectra show strong modulations in the red-NIR range on five cavities with different lengths. Selectivity of the peak wavelengths is obtained, proving the tunability of this kind of optical systems. The confined modes are analyzed experimentally, analytically and via finite difference time domain (FDTD) simulations. Experimental reflectivities up to 78% are observed.
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