Dr. Mark Neisser Profile

Dr. Mark Neisser

Technology Director at Tsinghua Univ

SPIE Involvement:

Author

Publications (68)

SPIE Journal Paper | 4 October 2021 Open Access

International Roadmap for Devices and Systems lithography roadmap

Mark Neisser

JM3, Vol. 20, Issue 04, 044601, (October 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.4.044601

KEYWORDS: Lithography, Extreme ultraviolet, Logic, Stochastic processes, Optical lithography, Image processing, Extreme ultraviolet lithography, Photoresist processing, Nanoimprint lithography, Double patterning technology

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Proceedings Article | 23 March 2020 Presentation + Paper

Projecting EUV photo-speeds for future logic nodes

Mark Neisser, Harry Levinson

Proceedings Volume 11323, 113231N (2020) https://doi.org/10.1117/12.2551311

KEYWORDS: Extreme ultraviolet, Stochastic processes, Extreme ultraviolet lithography, Logic, Lithography, Line edge roughness, Nanoimprint lithography, Absorbance, Line width roughness

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Since the expected exposure dose of photoresist is an important parameter in the usability of EUV at a reasonable cost, the Lithography IRDS Focus Team (IFT) developed a photospeed projection as part of the 2019 IRDS lithography roadmap. We used two different methods to do this. Both methods started with the assumption that the 7-nm node critical layers exposed using EUV single exposure just meet the CDU requirement. This is equivalent to assuming that EUV users picked the fastest resist possible that still met requirements. Method one was to separate the required CD control for the 7nm node into a portion due to photon shot noise and a portion due to resist stochastics. Although the literature has widely varying numbers for the relative amounts of photon shot noise and resist stochastics, this approach did provide some insight. If one assumes most of the CDU is mostly due to photon stochastics, then substantial resist improvements from node to node, for example 20% less stochastic CD variation, doesn’t make much difference to the total stochastics. But if there isn’t resist improvement, then even doubling the source power from node to node won’t meet CDU requirements. If we assume that resist stochastics make up almost all of the CDU observed at the 7-nm node, then no reasonable amount of dose increase meets future requirements. Only if a combination of significant resist improvement and significant dose increases is used can you meet requirements. The second approach was to extrapolate using k₄.¹ In this case, assuming a typical current value of k₄, we estimate a typical line and space 7-nm node exposure dose to be to be 36 mJ/cm². We used the reported historical improvement in equivalent k₁ for resists as a guide for how fast resist k₄ can improve. This projected that typical resist exposure doses will have to increase over 30% per node on average to meet CDU and LER requirements for the leading-edge logic devices, leading to dose requirements < 100 mJ/cm² by the 1.5 nm node. We will discuss the challenges in meeting this roadmap and how the industry may adapt to the future challenge of lower noise imaging processes.

Proceedings Article | 25 March 2016 Paper

Studying electron-PAG interactions using electron-induced fluorescence

Amrit Narasimhan, Steven Grzeskowiak, Jonathan Ostrander, Jonathon Schad, Eliran Rebeyev, Mark Neisser, Leonidas Ocola, Gregory Denbeaux, Robert Brainard

Proceedings Volume 9779, 97790F (2016) https://doi.org/10.1117/12.2219850

KEYWORDS: Electrons, Luminescence, Extreme ultraviolet lithography, Extreme ultraviolet, Molecules, Photons, Lithography, Photoresist materials, Ionization, Molecular interactions, Polymers, Photodiodes, Polymethylmethacrylate, Phase modulation, Quantum efficiency

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Proceedings Article | 21 March 2016 Paper

Cross sections of EUV PAGs: influence of concentration, electron energy, and structure

Steven Grzeskowiak, Amrit Narasimhan, Liam Wisehart, Jonathon Schad, Mark Neisser, Leonidas Ocola, Robert Brainard, Greg Denbeaux

Proceedings Volume 9779, 97790C (2016) https://doi.org/10.1117/12.2219851

KEYWORDS: Molecules, Extreme ultraviolet, Extreme ultraviolet lithography, Photoresist materials, Photochemistry, Ionization, Chemically amplified resists, Mass spectrometry, Electron beams, Absorption, Polymers, Molecular interactions

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Proceedings Article | 18 March 2016 Paper

Energy deposition and charging in EUV lithography: Monte Carlo studies

Liam Wiseheart, Amrit Narasimhan, Steven Grzeskowiak, Mark Neisser, Leonidas Ocola, Greg Denbeaux, Robert Brainard

Proceedings Volume 9776, 97762O (2016) https://doi.org/10.1117/12.2219849

KEYWORDS: Electrons, Extreme ultraviolet lithography, Extreme ultraviolet, Monte Carlo methods, Solid modeling, Photons, Ionization, Copper, Silicon, Particles

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SPIE Journal Paper | 24 December 2015

Platinum and palladium oxalates: positive-tone extreme ultraviolet resists

Miriam Sortland, Jodi Hotalen, Ryan Del Re, James Passarelli, Michael Murphy, Tero Kulmala, Yasin Ekinci, Mark Neisser, Daniel Freedman, Robert Brainard

JM3, Vol. 14, Issue 04, 043511, (December 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.4.043511

KEYWORDS: Palladium, Platinum, Magnesium, Extreme ultraviolet, Solids, Metals, Lithography, Extreme ultraviolet lithography, Carbon monoxide, Carbonates

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SPIE Journal Paper | 9 November 2015

Low-line edge roughness extreme ultraviolet photoresists of organotin carboxylates

Ryan Del Re, James Passarelli, Miriam Sortland, Brian Cardineau, Yasin Ekinci, Elizabeth Buitrago, Mark Neisser, Daniel Freedman, Robert Brainard

JM3, Vol. 14, Issue 04, 043506, (November 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.4.043506

KEYWORDS: Tin, Line edge roughness, Photoresist materials, Optical lithography, Extreme ultraviolet lithography, Extreme ultraviolet, Lithography, Edge roughness, Crystals, Optical filters

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SPIE Journal Paper | 14 October 2015

Organometallic carboxylate resists for extreme ultraviolet with high sensitivity

James Passarelli, Michael Murphy, Ryan Del Re, Miriam Sortland, Jodi Hotalen, Levi Dousharm, Roberto Fallica, Yasin Ekinci, Mark Neisser, Daniel Freedman, Robert Brainard

JM3, Vol. 14, Issue 04, 043503, (October 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.4.043503

KEYWORDS: Antimony, Polymers, Molecules, Chromium, Extreme ultraviolet, Polymerization, Lithography, Bromine, Scanning electron microscopy, Metals

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SPIE Journal Paper | 13 October 2015

Studying thickness loss in extreme ultraviolet resists due to electron beam exposure using experiment and modeling

Amrit Narasimhan, Steven Grzeskowiak, Bharath Srivats, Henry Herbol, Liam Wisehart, Jonathon Schad, Chris Kelly, William Earley, Leonidas Ocola, Mark Neisser, Gregory Denbeaux, Robert Brainard

JM3, Vol. 14, Issue 04, 043502, (October 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.4.043502

KEYWORDS: Extreme ultraviolet, Scattering, Electron beams, Extreme ultraviolet lithography, Photons, Photoresist materials, Ionization, Ellipsometry, Monte Carlo methods, Solid modeling

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Proceedings Article | 27 May 2015 Paper

Systematic study of ligand structures of metal oxide EUV nanoparticle photoresists

Jing Jiang, Mufei Yu, Ben Zhang, Mark Neisser, Jun Sung Chun, Emmanuel Giannelis, Christopher Ober

Proceedings Volume 9422, 942222 (2015) https://doi.org/10.1117/12.2084896

KEYWORDS: Nanoparticles, Extreme ultraviolet lithography, Optical lithography, Oxides, Metals, Extreme ultraviolet, Zirconium dioxide, Photoresist materials, Deep ultraviolet, Particles

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Proceedings Article | 27 May 2015 Paper

New developments in ligand-stabilized metal oxide nanoparticle photoresists for EUV lithography

Christopher Ober, Jing Jiang, Ben Zhang, Li Li, Emmanuel Giannelis, Jun Sung Chun, Mark Neisser, Reyes Sierra-Alvares

Proceedings Volume 9422, 942207 (2015) https://doi.org/10.1117/12.2086488

KEYWORDS: Nanoparticles, Photoresist developing, Extreme ultraviolet lithography, Photoresist materials, Oxides, Optical lithography, Extreme ultraviolet, Metals, Line edge roughness, Zirconium dioxide

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The introduction of EUV lithography to manufacturing requires the development of both new EUV exposure tools and photoresists. The main challenges for photoresists are to achieve high resolution, and low roughness patterning at very high sensitivity given the limited intensity of current sources. A new class of photoresist formed from ligand-stabilized metal oxide nanoparticles shows extraordinary sensitivity for EUV lithography. These nanoparticles are processed in traditional organic solvents for both deposition and development as negative tone resist; positive tone images are possible if the aqueous base developer is used in addition to a post-exposure bake step. This paper presents new developments in the study of ligand-stabilized nanoparticle photoresists for EUV lithography. It is our current understanding that a key aspect of the solubility change of these photoresists during exposure involves ligand displacement by anions generated from photoactive compounds such as sulfonic acid photoacid generators. Both positive and negative tone patterning are possible and depend on thermal treatment history and choice of developer. On the basis of a non-chemically amplified ligand exchange mechanism, new resist structures were created. Both aromatic and aliphatic carboxylic acids with different functional groups have been studied in the formation of the nanoparticles and include dimethylacrylic acid, isobutyric acid, toluic acid. It has been shown that those nanoparticles with higher binding affinity ligands show better resolution and line edge roughness under EUV exposure. Some formulations demonstrate EUV sensitivity as high as 1.4 mJ/cm2, while other formulations demonstrate that improved LER values of 3-5nm. The overall resolution, sensitivity and roughness tradeoff has been evaluated and provides an understanding of structure - property relationships. In this paper, we also discuss major efforts on the further understanding of the patterning mechanism. By testing the dissolution rate and plotting it in Hansen interaction triangles, we can compare the differences between different formulations and choose a suitable developer for each formulation. We also used the dissolution rate study to confirm the important role of PAG and ligand exchange for pattern formation. In addition, aspects of the EHS properties of these new photoresists have been investigated and will be discussed.