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Dr. Matteo Valenza
at Univ Montpellier
SPIE Involvement:
Author
Publications (4)
Proceedings Article | 11 June 2007 Paper
Low frequency gate noise modeling of ultrathin oxide MOSFETs
Proceedings Volume 6600, 66001O (2007) https://doi.org/10.1117/12.726920
KEYWORDS: Oxides, Transistors, Data modeling, Interfaces, Field effect transistors, Instrument modeling, Dielectrics, Signal to noise ratio, Electrons, Analog electronics
Proceedings Article | 23 May 2005 Paper
Trap competition inducing R.T.S noise in saturation range in N-MOSFETs
C. Leyris, A. Hoffmann, M. Valenza, J.-C. Vildeuil, F. Roy
Proceedings Volume 5844, (2005) https://doi.org/10.1117/12.609375
KEYWORDS: Oxides, Field effect transistors, Silicon, Signal to noise ratio, Switching, Instrument modeling, Transistors, Molybdenum, Interference (communication), Switches
Proceedings Article | 12 May 2003 Paper
Impact of scaling down on 1/f noise in MOSFETs
Matteo Valenza, Alain Hoffmann, Arnaud Laigle, Dominique Rigaud, Mathieu Marin
Proceedings Volume 5113, (2003) https://doi.org/10.1117/12.492906
KEYWORDS: Oxides, Field effect transistors, Transistors, Molybdenum, Silicon, Instrument modeling, Amplifiers, CMOS technology, Dielectrics, Remote sensing
Proceedings Article | 12 May 2003 Paper
Discussion on standard 1/f noise models in software packages: SPICE, HSPICE and BSIM3v3--comparison to MOSFET noise data on commercial c025
Matteo Valenza, Alain Hoffmann, Frederic Martinez, A. Laigle, Joseph Rhayem, R. Gillon, Marnix Tack
Proceedings Volume 5113, (2003) https://doi.org/10.1117/12.497578
KEYWORDS: Data modeling, Field effect transistors, Atrial fibrillation, Instrument modeling, Silicon, Analog electronics, Solid modeling, Device simulation, Semiconductors, Transistors
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