To improve data security and authentication, we designed and fabricated a cryptographic key generator based on a photonic integrated circuit that converts a digital input key into a digital output key by means of a physical unclonable function (PUF). The PUF is realized by an imperfect multi-mode interferometer controlled by low-power micro-electromechanical system (MEMS) phase shifters. An analytical model was derived and used to prove the randomness of the generated digital keys, and the model was validated by measurements of a first proof-of-concept demonstrator. The demonstrator was fabricated using a silicon nitride photonic integrated circuit (PIC) platform and our recently developed MEMS-on-PIC technology.
To improve data security and authentication, we designed and fabricated a cryptographic key generator based on a photonic integrated circuit that converts a digital input key into a digital output key by means of a physical unclonable function. The physical unclonable function is realised by an imperfect multi-mode interferometer controlled by low-voltage MEMS phase shifters with very low power dissipation. The MEMS phase shifters are fabricated using our recently developed MEMS-on-PIC technology. A cross-platform approach applicable to all common material platforms used in integrated photonics, enabled by a combination of a protective interfacial layer and a sacrificial layer technology.
The combination of photonic integrated circuits with MEMS allows to change the effective refractive index with unique ultra-low power dissipation characteristics. This enables high integration density applications like photonic quantum computing under cryogenic conditions. The here introduced fabrication technology can universally be applied to all common material platforms, such as silicon, silicon nitride or lithium niobate. The technological flexibility allows to use the IPMS PIC-technology (silicon nitride based) or cooperate very well cross-platforms with partners. The fabrication concept is successfully demonstrated and enables low-voltage devices with very low power consumption and modulation speeds up to megahertz.
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