GaSb-based interband cascaded lasers (ICLs) have now become a leading laser source to cover the mid-infrared (mid-IR) spectral range (3-6 µm). In the last decade, the success of the silicon photonics industry thanks to its optical properties, low cost and easy commercialization of its large wafers size. However, this requires all Sb-based optoelectronics functions on a Si platform. We will discuss about our recent results on single mode distributed feedback interband cascade lasers (ICL) directly grown on Si emitting between 3 and 4 µm.
In this talk we will review our recent demonstrations of mid-IR lasers grown on (001) Si or Ge substrates (diode lasers, interband cascade lasers, quantum cascade lasers) and compare their performance to those grown on their native substrates. We will demonstrate light coupling from lasers grown on patterned Si photonics wafers to passive SiN waveguides, with a coupling efficiency in line with simulations. Finally, we will discuss and evaluate strategies to enhance the coupling efficiency.
The successful development of mid-infrared (2-5µm) lasers monolithically integrated with Si-based photonics opens a door to realization of low-cost smart optical gas sensors for environmental monitoring and control of industrial processes. We will discuss our recent results on interband cascade lasers emitting between 3 and 4 µm grown on silicon substrates demonstrating high tolerance of these devices to threading dislocations. The high performance of the developed lasers makes them a good candidate for use as light sources in silicon photonics.
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