A new 193nm wavelength high resolution reticle defect inspection platform has been developed for both die-to-database
and die-to-die inspection modes. In its initial configuration, this innovative platform has been designed to meet the
reticle qualification requirements of the IC industry for the 22nm logic and 3xhp memory generations (and shrinks) with
planned extensions to the next generation. The 22nm/3xhp IC generation includes advanced 193nm optical lithography
using conventional RET, advanced computational lithography, and double patterning. Further, EUV pilot line
lithography is beginning. This advanced 193nm inspection platform has world-class performance and the capability to
meet these diverse needs in optical and EUV lithography.
The architecture of the new 193nm inspection platform is described. Die-to-database inspection results are shown on a
variety of reticles from industry sources; these reticles include standard programmed defect test reticles, as well as
advanced optical and EUV product and product-like reticles. Results show high sensitivity and low false and nuisance
detections on complex optical reticle designs and small feature size EUV reticles. A direct comparison with the existing
industry standard 257nm wavelength inspection system shows measurable sensitivity improvement for small feature
sizes
A new die-to-database high-resolution reticle defect inspection system has been developed for the 45nm logic node and
extendable to the 32nm node (also the comparable memory nodes). These nodes will use predominantly 193nm
immersion lithography although EUV may also be used. According to recent surveys, the predominant reticle types for
the 45nm node are 6% simple tri-tone and COG. Other advanced reticle types may also be used for these nodes
including: dark field alternating, Mask Enhancer, complex tri-tone, high transmission, CPL, EUV, etc. Finally,
aggressive model based OPC will typically be used which will include many small structures such as jogs, serifs, and
SRAF (sub-resolution assist features) with accompanying very small gaps between adjacent structures. The current
generation of inspection systems is inadequate to meet these requirements. The architecture and performance of a new
die-to-database inspection system is described. This new system is designed to inspect the aforementioned reticle types
in die-to-database and die-to-die modes. Recent results from internal testing of the prototype systems are shown. The
results include standard programmed defect test reticles and advanced 45nm and 32nm node reticles from industry
sources. The results show high sensitivity and low false detections being achieved.
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