Dr. Minoru Sugawara Profile

Dr. Minoru Sugawara

Senior Researcher at Sony Semiconductor Manufacturing Corp

SPIE Involvement:

Author

Publications (31)

Proceedings Article | 17 April 2014 Paper

Pattern fidelity verification for logic design in EUV lithography

Minoru Sugawara, Eric Hendrickx, Vicky Philipsen, Chris Maloney, Germain Fenger

Proceedings Volume 9048, 90480V (2014) https://doi.org/10.1117/12.2046096

KEYWORDS: Personal protective equipment, Photomasks, Semiconducting wafers, Optical proximity correction, Wafer-level optics, Extreme ultraviolet lithography, Cadmium, Logic, Metrology, Near field optics

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Proceedings Article | 23 September 2009 Paper

PMJ panel discussion overview: mask manufacturing with massive or multi-parallel method

Minoru Sugawara, Kokoro Kato

Proceedings Volume 7488, 748805 (2009) https://doi.org/10.1117/12.835786

KEYWORDS: Photomasks, Optical proximity correction, Inspection, Computational lithography, Double patterning technology, Lithography, Extreme ultraviolet, Extreme ultraviolet lithography, Source mask optimization, Data modeling

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Proceedings Article | 15 March 2007 Paper

Assessment of pattern position shift for defocusing in EUV lithography

Minoru Sugawara

Proceedings Volume 6517, 65170X (2007) https://doi.org/10.1117/12.713244

KEYWORDS: Photomasks, Monochromatic aberrations, Tantalum, Reflectivity, Cadmium sulfide, Extreme ultraviolet lithography, Extreme ultraviolet, Electroluminescence, Tolerancing, Semiconducting wafers

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Proceedings Article | 20 October 2006 Paper

PMJ 2006 panel discussion review: Mask technologies for EUVL

Minoru Sugawara, Hisatake Sano

Proceedings Volume 6349, 63492F (2006) https://doi.org/10.1117/12.693287

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Electron beam lithography, Inspection, Printing, Polishing, Particle contamination, Particles, Metrology

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Proceedings Article | 20 May 2006 Paper

Mask pattern correction to compensate for the effect of off-axis incidence in EUV lithography

Minoru Sugawara, Iwao Nishiyama

Proceedings Volume 6283, 62830L (2006) https://doi.org/10.1117/12.681845

KEYWORDS: Photomasks, Tantalum, Semiconducting wafers, Optical proximity correction, Cadmium, Extreme ultraviolet lithography, Wafer-level optics, Reflectivity, Reflection, Light

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Proceedings Article | 23 March 2006 Paper

Simulation analysis of printability of scratch and bump defects in EUV lithography

Minoru Sugawara, Iwao Nishiyama

Proceedings Volume 6151, 61510W (2006) https://doi.org/10.1117/12.657640

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Photomasks, Image quality, Diffraction, Extreme ultraviolet lithography, Multilayers, Glasses, Tantalum, Particles

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Proceedings Article | 8 November 2005 Paper

Impact of slanted absorber side wall on printability in EUV lithography

Minoru Sugawara, Iwao Nishiyama

Proceedings Volume 5992, 59923V (2005) https://doi.org/10.1117/12.632419

KEYWORDS: Photomasks, Semiconducting wafers, Cadmium, Absorption, Critical dimension metrology, Extreme ultraviolet lithography, Reflectivity, Reflection, Diffraction, Tantalum

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Proceedings Article | 6 May 2005 Paper

Influence of asymmetry of diffracted light on printability in EUV lithography

Minoru Sugawara, Iwao Nishiyama, Mikio Takai

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.598994

KEYWORDS: Semiconducting wafers, Photomasks, Nanoimprint lithography, Diffraction, Tantalum, Fourier transforms, Extreme ultraviolet lithography, Wafer-level optics, Geometrical optics, Image analysis

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Proceedings Article | 20 May 2004 Paper

Effect of absorber material and mask pattern correction on pattern fidelity in EUV lithography

Minoru Sugawara, Takeo Hashimoto, Iwao Nishiyama

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.534981

KEYWORDS: Photomasks, Mass attenuation coefficient, Near field, Optical testing, Mineralogy, Reflectivity, Semiconducting wafers, Refractive index, Tantalum, Extreme ultraviolet lithography

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Proceedings Article | 20 May 2004 Paper

Lithographic characterization of EUVL mask blank defects

Takeo Hashimoto, Hiromasa Yamanashi, Minoru Sugawara, Iwao Nishiyama

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.534692

KEYWORDS: Photomasks, Inspection, Extreme ultraviolet lithography, Defect detection, Lithography, Phase shifts, Molybdenum, Silicon, Sputter deposition, Electron beams

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Proceedings Article | 28 August 2003 Paper

Dependence of pattern printability on thicknesses of absorber and cap layers of Mo/Si mask blank for EUV lithography

Minoru Sugawara, Akira Chiba, Hiromasa Yamanashi, Iwao Nishiyama

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504376

KEYWORDS: Reflectivity, Silicon, Photomasks, Ruthenium, Nanoimprint lithography, Extreme ultraviolet lithography, Extreme ultraviolet, Semiconducting wafers, Absorbance, Oxidation

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Proceedings Article | 16 June 2003 Paper

Phase-shift mask in EUV lithography

Minoru Sugawara, Akira Chiba, Iwao Nishiyama

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.484433

KEYWORDS: Photomasks, Phase shifts, Reflectivity, Ruthenium, Binary data, Refractive index, Nanoimprint lithography, Resolution enhancement technologies, Silicon, Extreme ultraviolet lithography

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Proceedings Article | 16 June 2003 Paper

Estimation-EUV mask flatness for allowable pattern shift

Akira Chiba, Minoru Sugawara, Iwao Nishiyama

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.483742

KEYWORDS: Photomasks, Extreme ultraviolet, Semiconducting wafers, Lithography, Surface finishing, Statistical analysis, Particles, Reflectivity, Imaging systems, Distortion

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Proceedings Article | 28 May 2003 Paper

Simulation study of pattern printability for reflective mask in EUV lithography

Minoru Sugawara, Akira Chiba, Iwao Nishiyama

Proceedings Volume 5148, (2003) https://doi.org/10.1117/12.515147

KEYWORDS: Photomasks, Reflectivity, Phase shifts, Semiconducting wafers, Ruthenium, Binary data, Extreme ultraviolet lithography, Optical proximity correction, Nanoimprint lithography, Lithographic illumination

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SPIE Journal Paper | 1 April 2003

Simulation model of in-plane distortion in extreme ultraviolet lithography mask during chucking without friction

Akira Chiba, Eiichi Hoshino, Minoru Sugawara, Hiromasa Yamanashi, Kazuya Ota, Taro Ogawa, Shinji Okazaki

JM3, Vol. 2, Issue 02, (April 2003) https://doi.org/10.1117/12.10.1117/1.1563645

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Multilayers, Distortion, Mathematical modeling, Interfaces, Glasses, Tantalum, Error analysis, Quartz

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SPIE Journal Paper | 1 January 2003

Pattern printability for off-axis incident light in extreme ultraviolet lithography

Minoru Sugawara, Masaaki Ito, Taro Ogawa, Eiichi Hoshino, Akira Chiba, Shinji Okazaki

JM3, Vol. 2, Issue 01, (January 2003) https://doi.org/10.1117/12.10.1117/1.1530571

KEYWORDS: Optical proximity correction, Photomasks, Critical dimension metrology, Semiconducting wafers, Nanoimprint lithography, Extreme ultraviolet lithography, Ruthenium, Head, Optical calibration, Monochromatic aberrations

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Proceedings Article | 1 August 2002 Paper

Pattern printability for reflectance degradation of Mo/Si mask blanks in EUV lithography

Minoru Sugawara, Masaaki Ito, Akira Chiba, Eiichi Hoshino, Hiromasa Yamanashi, Hiromasa Hoko, Taro Ogawa, Byoung Lee, Takashi Yoneda, Masashi Takahashi, Iwao Nishiyama, Shinji Okazaki

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476991

KEYWORDS: Reflectivity, Photomasks, Binary data, Molybdenum, Silicon, Extreme ultraviolet lithography, Phase shifts, Semiconducting wafers, Ruthenium, Mirrors

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Proceedings Article | 1 July 2002 Paper

Pattern printability for off-axis incident light in EUV lithography

Minoru Sugawara, Masaaki Ito, Taro Ogawa, Eiichi Hoshino, Akira Chiba, Shinji Okazaki

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472301

KEYWORDS: Optical proximity correction, Critical dimension metrology, Photomasks, Extreme ultraviolet lithography, Nanoimprint lithography, Charge-coupled devices, Ruthenium, Semiconducting wafers, Optical calibration, Monochromatic aberrations

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Proceedings Article | 1 July 2002 Paper

Simulation model of in-plane distortion in EUVL mask during chucking

Akira Chiba, Kazuya Ota, Eiichi Hoshino, Minoru Sugawara, Taro Ogawa, Shinji Okazaki

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472348

KEYWORDS: Photomasks, Multilayers, Extreme ultraviolet lithography, Free space, Distortion, Mathematical modeling, Image processing, Finite element methods, Finite difference methods, Lithography

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Proceedings Article | 27 December 1996 Paper

Chemically amplified resist process for 0.25-um-generation photomasks

Mikio Katsumata, Hiroichi Kawahira, Minoru Sugawara, Satoru Nozawa

Proceedings Volume 2884, (1996) https://doi.org/10.1117/12.262795

KEYWORDS: Reticles, Critical dimension metrology, Photoresist processing, Dry etching, Chromium, Photomasks, Optical proximity correction, Chemically amplified resists, Etching, Electron beams

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Proceedings Article | 24 July 1996 Paper

Chemically amplified resist process for 0.25-um generation photomasks

Mikio Katsumata, Hiroichi Kawahira, Minoru Sugawara, Satoru Nozawa

Proceedings Volume 2793, (1996) https://doi.org/10.1117/12.245249

KEYWORDS: Reticles, Critical dimension metrology, Dry etching, Photoresist processing, Chromium, Photomasks, Optical proximity correction, Chemically amplified resists, Electron beams, Optical calibration

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Proceedings Article | 7 June 1996 Paper

Influence of process latitude on exposure characteristics

Minoru Sugawara, Hiroichi Kawahira, Satoru Nozawa

Proceedings Volume 2726, (1996) https://doi.org/10.1117/12.240932

KEYWORDS: Photomasks, Semiconducting wafers, Tolerancing, Lithography, Iterated function systems, Information operations, Radon, Toxic industrial chemicals, Mask making, Logic devices

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Proceedings Article | 8 December 1995 Paper

Attenuated phase-shifting mask specification with modified beam illumination

Ichiro Kagami, Minoru Sugawara, Hiroichi Kawahira, Keisuke Tsudaka, Kiichi Ishikawa, Satoru Nozawa

Proceedings Volume 2621, (1995) https://doi.org/10.1117/12.228198

KEYWORDS: Photomasks, Transmittance, Lithography, Photoresist processing, Lithographic illumination, Phase shifts, Convolution, Semiconducting wafers, Optical lithography, Mask making

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Proceedings Article | 8 December 1995 Paper

Defect printability study of attenuated phase-shifting masks for specifying inspection sensitivity

Minoru Sugawara, Kiichi Ishikawa, Hiroichi Kawahira, Ichiro Kagami, Satoru Nozawa

Proceedings Volume 2621, (1995) https://doi.org/10.1117/12.228199

KEYWORDS: Photomasks, Semiconducting wafers, Transmittance, Phase shifts, Inspection, Defect inspection, Optical proximity correction, Mask making, Indium arsenide, Optical calibration

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Proceedings Article | 3 July 1995 Paper

Fast-resist image estimation methodology using light-intensity distribution

Keisuke Tsudaka, Manabu Tomita, Minoru Sugawara, Hiroichi Kawahira, Satoru Nozawa

Proceedings Volume 2512, (1995) https://doi.org/10.1117/12.212804

KEYWORDS: Optical proximity correction, Image processing, Image analysis, Photoresist processing, Convolution, Photomasks, Lithography, Optical calibration, Error analysis, Semiconductors

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Proceedings Article | 26 May 1995 Paper

Practical evaluation of optical-proximity effect correction by EDM methodology

Minoru Sugawara, Hiroichi Kawahira, Keisuke Tsudaka, Satoru Nozawa

Proceedings Volume 2440, (1995) https://doi.org/10.1117/12.209253

KEYWORDS: Optical proximity correction, Photomasks, Image processing, Reticles, Semiconducting wafers, Lithography, Optical calibration, Opacity, Mask making, Optical lithography

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Proceedings Article | 3 November 1994 Paper

New mask optimization methodology using exposure-defocus and mask fabrication latitude

Keisuke Tsudaka, Minoru Sugawara, Hiroichi Kawahira, Akihiro Ogura, Satoru Nozawa

Proceedings Volume 2254, (1994) https://doi.org/10.1117/12.191933

KEYWORDS: Photomasks, Semiconducting wafers, X-ray technology, Lithium, Binary data, Mask making, Source mask optimization, Optical lithography, X-rays, Photoresist processing

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Proceedings Article | 3 November 1994 Paper

Development of practical attenuated phase-shifting mask

Akihiro Ogura, Hiroichi Kawahira, Minoru Sugawara, Keisuke Tsudaka, Takehiko Gunji, Satoru Nozawa

Proceedings Volume 2254, (1994) https://doi.org/10.1117/12.191939

KEYWORDS: Photomasks, Transmittance, Defect inspection, Phase shifts, Reactive ion etching, Optical simulations, X-ray technology, Excimer lasers, Laser engraving, Chromium

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Proceedings Article | 17 May 1994 Paper

Estimation of attenuated phase-shifting mask fabrication latitude using an optical exposure-defocus methodology

Minoru Sugawara, Hiroichi Kawahira, Keisuke Tsudaka, Akihiro Ogura, Satoru Nozawa, Fumikatsu Uesawa, Hideo Shimizu

Proceedings Volume 2197, (1994) https://doi.org/10.1117/12.175416

KEYWORDS: Photomasks, Transmittance, Mask making, Semiconducting wafers, Etching, Phase shifting, Error analysis, Chromium, Quartz, Phase shifts

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Proceedings Article | 8 August 1993 Paper

Exposure alignment compensation method for rim phase-shifting mask fabrication

Minoru Sugawara, Hiroichi Kawahira, Akihiro Ogura, Satoru Nozawa

Proceedings Volume 1927, (1993) https://doi.org/10.1117/12.150426

KEYWORDS: Image registration, Photomasks, Optical lithography, Mask making, Optical alignment, Phase shifting, Phase shifts, Destructive interference, Structural design, Optical simulations

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