Mr. Mitsuharu Yamana Profile

Mitsuharu Yamana

VP, Global Technology Development at Toppan Photomask Co Ltd

SPIE Involvement:

Author

Publications (20)

Proceedings Article | 12 November 2024 Presentation + Paper

Mask performance improvement by pixel level dose correction

Mayuko Matsumoto, Naoki Yoshida, Tetsunori Hirata, Makoto Motegi, Kiyoshi Kageyama, Mitsuharu Yamana, Wataru Kunishima, Ryo Iikubo

Proceedings Volume 13216, 132160H (2024) https://doi.org/10.1117/12.3034611

KEYWORDS: Error control coding, Critical dimension metrology, Line edge roughness, Design, Semiconducting wafers, Extreme ultraviolet, Optical lithography, Photomasks, Modulation, Electron beam lithography

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Proceedings Article | 21 November 2023 Poster + Paper

Mask optimization approach for wafer LCDU improvement in ArF lithography

Kenjiro Ichikawa, Itaru Yoshida, Kazuaki Matsui, Yosuke Kojima, Tatsuya Nagatomo, Mitsuharu Yamana

Proceedings Volume 12751, 127511H (2023) https://doi.org/10.1117/12.2688551

KEYWORDS: Semiconducting wafers, Lithography, Error analysis, Printing, Transmittance, Source mask optimization, Wafer testing, Optical proximity correction, Optical lithography, Photomasks

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Proceedings Article | 16 September 2022 Paper

Resist pattern resolution on hard mask layer for photomask

Naoto Yonemaru, Kazuaki Matsui, Itaru Yoshida, Yosuke Kojima, Mitsuharu Yamana

Proceedings Volume 12325, 123250D (2022) https://doi.org/10.1117/12.2640377

KEYWORDS: Etching, Photomasks, Tantalum, Silicon

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Proceedings Article | 23 August 2021 Paper

Study of high-transmission PSM for lithographic performance and defect control

Kazuaki Matsui, Naoto Yonemaru, Yosuke Kojima, Tatsuya Nagatomo, Mitsuharu Yamana

Proceedings Volume 11908, 119080A (2021) https://doi.org/10.1117/12.2601771

KEYWORDS: Photomasks, Semiconducting wafers, Lithography, SRAF, Scanning electron microscopy, Optical proximity correction, Logic, Critical dimension metrology, Wafer testing, Nanoimprint lithography

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SPIE Journal Paper | 22 March 2021

Effects of mask pattern transmission on ArF lithographic performance in contact hole patterning

Naoto Yonemaru, Kazuaki Matsui, Yosuke Kojima, Tatsuya Nagatomo, Mitsuharu Yamana

JM3, Vol. 20, Issue 01, 014401, (March 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.1.014401

KEYWORDS: Photomasks, Lithography, Semiconducting wafers, Nanoimprint lithography, Scanning electron microscopy, SRAF, Optical proximity correction, Optical lithography, Wafer testing, Etching

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Proceedings Article | 12 October 2020 Presentation + Paper

A novel "high-transmission" phase shift mask for ArF lithographic performance enhancement

Naoto Yonemaru, Kazuaki Matsui, Yosuke Kojima, Tatsuya Nagatomo, Mitsuharu Yamana

Proceedings Volume 11518, 115180B (2020) https://doi.org/10.1117/12.2572021

KEYWORDS: Photomasks, Lithography, 193nm lithography, Phase shifts, Semiconducting wafers, Nanoimprint lithography, Image enhancement, Critical dimension metrology, Mask making, Dry etching

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Proceedings Article | 16 September 2013 Paper

In-die mask registration for multi-patterning

F. Laske, S. Kunitani, T. Kamibayashi, M. Yamana, A. Fuse, M. Wagner, K.-D. Roeth, M. Ferber, M. Daneshpanah, S. Czerkas, H. Sakaguchi

Proceedings Volume 8880, 888024 (2013) https://doi.org/10.1117/12.2027200

KEYWORDS: Photomasks, Semiconducting wafers, Metrology, Reticles, Image registration, Overlay metrology, Model-based design, Manufacturing, Lithography, Error analysis

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Proceedings Article | 27 May 2010 Paper

Contact mask LER impact on lithographic performance

Tatsuya Nagatomo, Mitsuharu Yamana, Katsuhisa Morinaga, Masaru Higuchi, Shunsuke Sato, Tsuyoshi Tanaka

Proceedings Volume 7748, 77481S (2010) https://doi.org/10.1117/12.866397

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Lithography, Line edge roughness, Quartz, Nanoimprint lithography, Binary data, Opacity, Glasses

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Proceedings Article | 11 May 2009 Paper

Comparison of lithographic performance between MoSi binary mask and MoSi attenuated PSM

Mitsuharu Yamana, Matthew Lamantia, Vicky Philipsen, Shingo Wada, Tatsuya Nagatomo, Yoji Tonooka

Proceedings Volume 7379, 73791L (2009) https://doi.org/10.1117/12.824298

KEYWORDS: Photomasks, Semiconducting wafers, Electroluminescence, SRAF, Critical dimension metrology, Lithography, Binary data, Quartz, Polarization, Manufacturing

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Proceedings Article | 11 May 2009 Paper

Fine pattern fabrication property of binary mask and attenuated phase shift mask

Taichi Yamazaki, Yosuke Kojima, Mitsuharu Yamana, Takashi Haraguchi, Tsuyoshi Tanaka

Proceedings Volume 7379, 73791V (2009) https://doi.org/10.1117/12.824307

KEYWORDS: SRAF, Chromium, Photomasks, Inspection, Image resolution, Phase shifts, Optical simulations, Binary data, Semiconducting wafers, Glasses

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Proceedings Article | 14 May 2004 Paper

Contact shrinkage techniques for 157-nm lithography

Mitsuharu Yamana, Masumi Hirano, Seiji Nagahara, Makoto Tominaga

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.534596

KEYWORDS: Lithography, Polymers, Transparency, Photomasks, Semiconducting wafers, Electronics, Critical dimension metrology, Photoresist processing, Carbon, Glasses

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Proceedings Article | 12 June 2003 Paper

Investigation of the polymer systems for ArF resists

Mitsuharu Yamana, Masumi Hirano, Seiji Nagahara, Kunihiko Kasama, Hideo Hada, Miwa Miyairi, Shinichi Kohno, Takeshi Iwai

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485105

KEYWORDS: Etching, Monochromatic aberrations, Polymers, Surface roughness, Resistance, Carbon, Lithography, Oxides, Photomasks, Chemical species

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Proceedings Article | 24 July 2002 Paper

Importance of resist transparency and development rate control in via-first dual damascene processes

Seiji Nagahara, Masashi Fujimoto, Mitsuharu Yamana, Takeo Hashimoto

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474259

KEYWORDS: Transparency, Etching, Photoresist processing, Dielectrics, Scanning electron microscopy, Absorbance, Optical lithography, Polymers, Lithography, Copper

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Proceedings Article | 11 June 1999 Paper

Effects of polymer structure on dissolution characteristics in chemically amplified 193-nm resists

Toshiro Itani, Hiroshi Yoshino, Masaharu Takizawa, Mitsuharu Yamana, Hiroyoshi Tanabe, Kunihiko Kasama

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350214

KEYWORDS: Polymers, Lithography, Resistance, Etching, Diffusion, Silicon, Scanning electron microscopy, Silicon films, 193nm lithography, Lithographic illumination

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Proceedings Article | 29 June 1998 Paper

Deblocking reaction of chemically amplified ArF positive resists

Mitsuharu Yamana, Toshiro Itani, Hiroshi Yoshino, Shuichi Hashimoto, Hiroyoshi Tanabe, Kunihiko Kasama

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312429

KEYWORDS: Lithography, Polymers, Chemical analysis, Diffusion, Contamination, Temperature metrology, Silicon, Statistical analysis, Absorption, Beryllium

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Proceedings Article | 29 June 1998 Paper

Compatibility of chemically amplified photoresists with bottom antireflective coatings

Hiroshi Yoshino, Toshiro Itani, Shuichi Hashimoto, Mitsuharu Yamana, Tsuyoshi Yoshii, Hiroyoshi Tanabe

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312459

KEYWORDS: Diffusion, Chemically amplified resists, Semiconducting wafers, Bottom antireflective coatings, Photoresist materials, Silicon, Lithography, Silicon films, Excimer lasers, Reflectivity

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Proceedings Article | 2 October 1997 Paper

Preparation and optical properties of amorphous silica doped with porphins (TCPP)

Motohiro Uo, Mitsuharu Yamana, Kohei Soga, Hiroyuki Inoue, Akio Makishima

Proceedings Volume 3136, (1997) https://doi.org/10.1117/12.279151

KEYWORDS: Annealing, Silica, Sol-gels, Absorption, Time multiplexed optical shutter, Matrices, Phonons, FT-IR spectroscopy, Quantum efficiency, Bioalcohols

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Proceedings Article | 7 July 1997 Paper

Deblocking reaction of chemically amplified positive DUV resists

Mitsuharu Yamana, Toshiro Itani, Hiroshi Yoshino, Shuichi Hashimoto, Norihiko Samoto, Kunihiko Kasama

Proceedings Volume 3049, (1997) https://doi.org/10.1117/12.275829

KEYWORDS: Diffusion, Lithography, Deep ultraviolet, Chemically amplified resists, Chemical analysis, Air contamination, Silicon, Statistical analysis, Absorption, Beryllium

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Proceedings Article | 7 July 1997 Paper

Acid evaporation property in chemically amplified resists

Shuichi Hashimoto, Toshiro Itani, Hiroshi Yoshino, Mitsuharu Yamana, Norihiko Samoto, Kunihiko Kasama

Proceedings Volume 3049, (1997) https://doi.org/10.1117/12.275827

KEYWORDS: Diffusion, Electroluminescence, Absorbance, Chemically amplified resists, Lithography, Semiconducting wafers, Absorption, Ions, Scanning electron microscopy, Deep ultraviolet

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The lithographic performance of a chemically amplified resist system very much depends on the photo-generated acid structure. In a previous paper, we reported the molecular structure dependence of two typical photo-generated acids (aromatic sulfonic acid and alkyl sulfonic acid) from the viewpoints of lithographic performance and acid characteristics such as acid generation efficiency, acid diffusion behavior and acid evaporation property. In this paper, we evaluate the effect of the remaining solvent in a resist film on the acid evaporation property. Four types of two-component chemically amplified positive KrF resists were prepared consisting of tert-butoxycarbonyl (t-BOC) protected polyhydroxystyrene and sulfonic acid derivative photo-acid generator (PAG). Here, a different combination of two types of PAGs [2,4-dimethylbenzenesulfonic acid (aromatic sulfonic acid) derivative PAG and cyclohexanesulfonic acid (alkyl sulfonic acid) derivative PAG] and two types of solvents (propylene glycol monomethyl ether acetate; PGMEA and ethyl lactate; EL) were evaluated. The aromatic sulfonic acid was able to evaporate easily during post exposure bake (PEB) treatment, but the alkyl sulfonic acid was not. The higher evaporation property of aromatic sulfonic acid might be due to the higher vapor pressure and the longer acid diffusion length. Furthermore, the amount of aromatic sulfonic acid in the PGMEA resist was reduced by more than that in the EL resist. The amount of acid loss also became smaller at a higher prebake temperature. The concentration of the remaining solvent in the resist film decreased with the increasing prebake temperature. We think that the acid evaporation property was affected by the remaining solvent in the resist, film; the large amount of remaining solvent promoted the acid diffusion and eventually accelerated the acid evaporation from the resist film surface in the PGMEA resist. In summary, the acid evaporation property depends on both the acid structure and the remaining solvent in the resist film. These results can be applied to other chemically amplified resist systems to suppress the T-topping profile and achieve a superior resist performance.

Proceedings Article | 14 June 1996 Paper

Halation reduction for single-layer DUV resist processing

Hiroshi Yoshino, Toshiro Itani, Shuichi Hashimoto, Mitsuharu Yamana, Norihiko Samoto, Kunihiko Kasama

Proceedings Volume 2724, (1996) https://doi.org/10.1117/12.241819

KEYWORDS: Transmittance, Photoresist processing, Deep ultraviolet, Lithography, Excimer lasers, Reflectivity, Critical dimension metrology, Absorption, Chlorine, Optical lithography

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