InGaN/GaN multiple-quantum-well light-emitting diodes have been fabricated on the (1010) m-plane of 4H-SiC substrates. The c-axes of the m-plane epitaxial films and the substrate are parallel. The surface of the epitaxial films has a ridged texture with the ridges aligned perpendicular to the c-axis. Xray diffraction shows superlattice features from the multiple-quantum well stack, and plan-view transmission electron microscopy shows a threading dislocation density of ~ 1010 cm-2 and a basal plane stacking fault density of ~ 8 × 106 cm-1. The electroluminescence from the LED shows a strong polarization anisotropy with the majority of the light emitted perpendicular to the c-axis and a polarization ratio exceeding 0.8. The temperature dependence of the polarization ratio shows a 49 meV difference in energy gap between the valence band minima with different polarizations.
Electrical operation of III-Nitride light emitting diodes (LEDs) with photonic crystal structures is demonstrated. Employing photonic crystal structures in III-Nitride LEDs is a method to increase light extraction efficiency and directionality. The photonic crystal is a triangular lattice formed by dry etching into the III-Nitride LED. A range of lattice constants is considered (a ~ 270 - 340nm). The III-Nitride LED layers include a tunnel junction providing good lateral current spreading without a semi-absorbing metal current spreader as is typically done in conventional III-Nitride LEDs. These photonic crystal III-Nitride LED structures are unique because they allow for carrier recombination and light generation proximal to the photonic crystal (light extraction area) yet displaced from the absorbing metal contact. The photonic crystal Bragg scatters what would have otherwise been guided modes out of the LED, increasing the extraction efficiency. The far-field light radiation patterns are heavily modified compared to the typical III-Nitride LED’s Lambertian output. The photonic crystal affects the light propagation out of the LED surface, and the radiation pattern changes with lattice size. LEDs with photonic crystals are compared to similar III-Nitride LEDs without the photonic crystal in terms of extraction, directionality, and emission spectra.
Jonathan Wierer, Jerome Bhat, Chien-Hua Chen, G. Christenson, Lou Cook, M. Craford, Nathan Gardner, Werner Goetz, R. Scott Kern, Reena Khare, A. Kim, Michael Krames, Mike Ludowise, Richard Mann, Paul Martin, Mira Misra, J. O'Shea, Yu-Chen Shen, Frank Steranka, Steve Stockman, Sudhir Subramanya, S. Rudaz, Dan Steigerwald, Jingxi Yu
High-power light-emitting diodes (LEDs) in both the AlInGaP (red to amber) and the AlGaInN (blue-green) material systems are now commercially available. These high-power LEDs enable applications wherein high flux is necessary, opening up new markets that previously required a large number of conventional LEDs. Data are presented on high-power AlGaInN LEDs utilizing flip-chip device structures. The high-power flip-chip LED is contained in a package that provides high current and temperature operation, high reliability, and optimized radiation patterns. These LEDs produce record powers of 350 mW (1A dc, 300 K) with low (<4V) forward voltages. The performance of these LEDs is demonstrated in terms of output power, efficiency, and electrical characteristics.
Michael Krames, G. Christenson, Dave Collins, Lou Cook, M. Craford, A. Edwards, Robert Fletcher, Nathan Gardner, Werner Goetz, William Imler, Eric Johnson, R. Scott Kern, Reena Khare, Frederick Kish, Chris Lowery, Mike Ludowise, Richard Mann, M. Maranowski, Steven Maranowski, Paul Martin, J. O'Shea, S. Rudaz, Dan Steigerwald, J. Thompson, Jonathan Wierer, Jingxi Yu, David Basile, Ying-Lan Chang, Ghulam Hasnain, M. Heuschen, Kevin Killeen, Christophe Kocot, Steven Lester, Jeffrey Miller, Gerd Mueller, Regina Mueller-Mach, S. Jeffrey Rosner, Richard Schneider, Tetsuya Takeuchi, Tun Tan
Currently, commercial LEDs based on AlGaInN emit light efficiently from the ultraviolet-blue to the green portion of the visible wavelength spectrum. Data are presented on AlGaInN LEDs grown by organometallic vapor phase epitaxy (OMVPE). Designs for high-power AlGaInN LEDs are presented along with their performance in terms of output power and efficiency. Finally, present and potential applications for high-power AlGaInN LEDs, including traffic signals and contour lighting, are discussed.
Mari Ochiai-Holcomb, Michael Krames, Gloria Hofler, Carrie Carter-Coman, Eugene Chen, Patrick Grillot, Kwang Park, Nathan Gardner, Jen-Wu Huang, Jason Posselt, David Collins, Steve Stockman, M. Craford, Frederick Kish, I. Tan, Tun Tan, Christophe Kocot, Mark Hueschen
High power light emitting diodes (LEDs) are of interest for many lighting applications. Flux improvements can be achieved by scaling conventional chips to larger dimensions. However this scaling results in a decrease in extraction efficiency. These penalties can be offset by modifying the chip geometry such that the number of internal reflections is reduced, thereby increasing the probability of photon escape. LEDs with a truncated-inverted-pyramid (TIP) geometry have been fabricated and packaged. Peak efficiencies exceeding 100 lm/W have been measured (100 mA dc, 300 K) for orange ((lambda) p approximately 610 m) devices. In the red wavelength regime ((lambda) p approximately 650 nm), peak external quantum efficiencies of 55% (100 mA dc, 300 K) have been achieved. Flux exceeding 65 lumens from a single 594 nm device has also been demonstrated. These characteristics match and/or exceed the performance of many conventional lighting sources.
Conference Committee Involvement (3)
Light-Emitting Diodes: Research, Manufacturing, and Applications X
25 January 2006 | San Jose, California, United States
Light-Emitting Diodes: Research, Manufacturing, and Applications IX
25 January 2005 | San Jose, California, United States
Light-Emitting Diodes: Research, Manufacturing, and Applications VIII
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