EUV lithography enables the transition from multiple patterning in DUV back to single patterning in EUV, with the associated cost benefit. While imaging and patterning becomes easier with EUV, cross-platform overlay performance needs to be taken into account.
With quadruple patterning, the matching performance is driven by the platform capabilities, with platform specific fingerprints not contributing to the matching performance as they are similar for each layer. Introducing EUV automatically means we need to compensate for the differences in the platform fingerprints, as they bring a penalty in the DUV-EUV matching budget.
This paper will explain what the main overlay contributors in cross-platform matched machine overlay are and how they can be cancelled or reduced using additional correction measures, with the goal to reach below 2.0 nm cross matched machine overlay.
Particles on the surface of the EUV reticle can cause serious imaging errors during exposure. Laser shockwave
cleaning is a novel cleaning method, that shows great potential to remove these particles, without destroying
the delicate surface of the reticle. In an effort to assess the cleaning performance of this method, a number of
cleaning experiments were performed on wafers contaminated with glass spheres. These experiments showed that
with the current setup, it was possible to remove particles as small as 500 nm from the surface of the wafer, at
gap distances of 0.5 and 1.0 mm. Furthermore, the transient behaviour of the shockwave was studied with laser
flash shadowgraphy. This showed that the shockwave is initially elliptical in shape, and that it can be described
by the Taylor and Sedov solution for a point explosion.
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