We introduce and demonstrate a new simulator that utilizes resist-specific chemical formulations to drive a Monte Carlo multi-physics and chemistry modeling flow for NA 0.33 and NA 0.55 EUV lithography. With this model stochastic variations are a natural consequence of the chemical and atomic composition of the material. Fully predictive EUV absorption coefficients and exposure latitudes have less than 5% error. LCDU values are predicted with errors smaller than 15% and LWR/LER values are predicted with errors smaller than 7%. We believe chemistry-focused simulations will be key to the development of new EUV photoresists tailored to high-NA imaging.
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