Charge based deep level transient spectroscopy (Q-DLTS) has been used to investigate the defect states of poly (p phenylene vinylene)(PPV) light emitting diodes. Studies in the temperature range 250-315K show the presence of two carrier trapping centers in the polymer bulk: a majority carrier trap at 0.5 eV with a cross section of 10-16cm2 and a minority carrier trap at 0.4eV with a cross section of 10-19cm2. The results are compared and discussed with those previously reported in PPV based diodes using other techniques to determine the trap parameters in the polymer.
Next generation photolithography stepper tools will operate at 157 nm and require robust solid state photodetectors to ensure efficient operation and facilitate direct beam monitoring for photoresist dosimetry. There is currently no commercial detector system able to fully meet all the demanding requirements of this application. Diamond has a band gap of 5.5 eV. This implies that detectors fabricated from this material may be intrinsically visible blind and radiation hard. In this paper the results of the first study to assess the viability of the use of thin film polycrystalline diamond photodetectors for use in 157 nm F2-He based laser lithography tools are presented. Co- planar interdigitated electrode structures were fabricated on free standing polycrystalline diamond to realise photoconductive devices. These were exposed to pulses from an F2-He laser in the fluence range 0 - 1.4 mJcm-2. The electrical and optical characteristics of the devices have been measured and are compared to the response of a standard vacuum photodiode. The diamond devices appear to be ideally suited for use at 157 nm in lithography applications.
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