In extreme ultraviolet lithography, particle-free mask handling is a critical issue because the use of pellicles is impractical. We measured the long-term change in the number of particle adders on a mask blank during transfer processes using a reticle SMIF pod (RSP) and a dual pod, which consists of an outer pod and an inner pod that holds the mask. In the RSP, the number of particle adders during the transfer test of a load port in air to an electrostatic chuck chamber in vacuum decreased from 0.053/cycle to 0.032/cycle because of a clean-up during the pumping down and purging operations. However, the number of particle adders during vacuum transfer did not change with long-term use. Moreover, we found that particles were added by mask blank sliding on a robot hand during vacuum transfer. In contrast, for the dual pod, no accident was observed during the 2000-cycle transfer test, and the number of particle adders was 0.004/cycle. We confirmed that the filter effect and gap effect for protecting the mask from particles were effective. We concluded that the dual pod was a reliable mask carrier for vacuum transfer.
We had developed an actinic full-field inspection system to detect multilayer phase-defects with dark field imaging.
Regarding the actinic inspection of native defects, the influence of the defect's surface dimension and multilayer
structure, on the intensity-signal obtained from the inspection was analyzed. Three mask blanks were inspected from
which 55 defects, observed with AFM and SEM, were classified as amplitude-defects or phase-defects. The surface
dimensions and SEVDs (sphere equivalent volume diameters) of the defects were measured with the AFM. In the case
where their SEVDs were same as of the programmed phase-defects, they were found to produce stronger intensitysignals
in comparison to the ones from the programmed phase-defects. Cross-sectional multilayer structures of two
native phase-defects were observed with TEM, and those defects formed non-conformal structures in the multilayer. This
result means that most of the native phase-defects tend to form a non-conformal structure, and can make large impact on
the wafer image in comparison to the ones from a conformal structure. Besides phase-defects, the actinic inspection also
detected amplitude-defects. Although the sensitivities of the amplitude-defects were found to be lower than those of the
phase-defects, an amplitude-defect higher than 30 nm could be detected with high probability.
The key challenge before extreme ultraviolet lithography is to make defect-free masks, for which it is important to identify the root cause of defects, and it is also necessary to establish suitable critical mask defect size for the production of ULSI devices. We have been developing extreme ultraviolet (EUV) mask infrastructures such as a full-field actinic blank inspection tool and 199 nm wavelength patterned mask inspection tool in order to support blank/mask supplier in reducing blank/mask defects which impact wafer printing. In this paper, by evaluating the printability of programmed phase defects and absorber defects exposed by full-field scanner EUV1, we demonstrate that defect detection sensitivities of actinic blank inspection and patterned mask inspection are higher than that of wafer inspection in HP32nm. The evaluations were done by comparing the detection sensitivities of full-field actinic blank inspection tool, 199 nm wavelength patterned mask inspection tool, and electron beam (EB) wafer inspection tool. And then, based on the native defect analysis of blank/mask, we ascertained that actinic blank inspection and patterned mask inspection are effective in detecting killer defects both at the main pattern and at the light-shield border area.
It is important to control the defect level of the EUV lithography mask because of pellicle-less. We studied the resist
patterned wafer inspection method using EB inspection system.
In this paper, the defect detection sensitivity of EB inspection system is quantified using hp 32 nm line and space
pattern with about 5 nm LWR (Line Width Roughness). Programmed defects of 13 nm narrowing and 10 nm widening
have been detected successfully after the optimization of column and inspection condition. Next, the defects detected by
mask inspection system and EB wafer inspection system were compared and were in good agreement for printed killer
defects. In these results, EB inspection system is proved to be useful for EUV resist inspection.
Further, we evaluated the resist material damage by EB inspection irradiation and indicated the direction of reducing
the shrinkage.
A new SEMI standard E152-0709 "Mechanical Specification of EUV Pod for 150 mm EUVL Reticles" has been
published in July 2009. In the standard, reticle grounding requirements are mentioned as related information: an
electrical connection between the front and back sides of EUVL reticles as well as the electrical connection to the reticle
backside from outside the outer pod may be needed and specified in future. Reticle grounding is very important for
reticle protection not only from electrostatic discharge (ESD) damage but also from particle contamination due to
electrostatic attraction (ESA). Many past data suggested that EUV masks have to be grounded during shipping, storage
and tool handling to prevent particle adhesion. Canon, Nikon and Entegris have jointly developed a new ESD-free EUV
pod "cnPod-ESD" which has electrical connections to the reticle from outside the outer pod by modifying a SEMI
compliant EUV pod "cnPod". In order to have an electrical connection between the reticle backside and the outer pod, a
cantilever is installed inside the inner pod cover. The cantilever touches the reticle backside just inside 146mm x 146mm
which is specified as the minimum conductive layer area in SEMI P37 "Specification for Extreme Ultraviolet
Lithography Substrates and Blanks". In order to have an electrical connection between the reticle frontside and the outer
pod, though it is not required in E152, an electrical conductive material is used for the reticle supports on the inner pod
baseplate. We will show various evaluation data of the new ESD-free pods from particle contamination point of view and
will discuss the necessity of the reticle grounding in this paper. We will also mention the necessity of modification of the
SEMI standard P37 to make a universal EUV ESD-free pod.
Two EUVL masks were made using the compensation method for nonflatness of a mask; and the EUV1 was used to
evaluate the resulting overlay accuracy. For the same mask, the reproducibility of the intra-field overlay errors was better
than 1 nm (3σ) without linear components; and that of the flatness was better than 20 nm PV. In contrast, the overlay
errors were about 3 nm (3σ) for the two masks. The main cause of this degradation in overlay accuracy might be the
difference in mask flatness (~260 nm PV). Using overlay patterns corrected by the compensation method reduced the
overlay errors to about 2.5 nm (3σ). Although the compensation method produced only a small change, it definitely
improved the intra-field overlay of the EUV1. Furthermore, the EUV1 was used to evaluate the intra-wafer overlay for
23 shots. The single-machine overlay (SMO) was found to be better than 4.5 nm (Mean + 3σnonlinear), and the
mix-and-match overlay (MMO) between the EUV1 and an ArF immersion scanner (NSR-S610C) was about 20 nm
(Mean + 3σnonlinear). The main cause of the MMO errors might be the nonflatness of the mask and wafer chucks of the
EUV1. Thus, the chucks must be made flatter to reduce MMO errors. This work was supported in part by NEDO.
The next generation EUVL masks beyond hp15nm are difficult to repair for the current repair technologies including
focused ion beam (FIB) and electron beam (EB) in view of the minimum repairable size. We developed a new FIB
technology to repair EUVL masks. Conventional FIB use gallium ions (Ga+) generated by a liquid metal ion source
(LMIS), but the new FIB uses hydrogen ions (H2+) generated by a gas field ion source (GFIS). The minimum reaction
area of H2+ FIB is theoretically much smaller than that of EB. We investigated the repair performance of H2+ FIB. In the
concrete, we evaluated image resolution, scan damage, etching rate, material selectivity of etching and actinic image of
repaired area. The most important result is that there was no difference between the repaired area and the non-repaired
one on actinic images. That result suggests that the H2+ GFIS technology is a promising candidate for the solution to
repair the next generation EUVL masks beyond hp15nm.
Phase defect printability and phase defect detection capability were investigated by exposure and inspection experiments,
and simulation analysis. A new test mask with absorber line patterns and programmed phase defects with sizes much
smaller than used in a previous work, was exposed using dipole illumination. Simulation results showed that printability
of phase defects at the wafer level depended not only on defects' sizes and their locations, or on the line widths of the
pattern structures to be printed, but also depended on the illumination conditions employed for pattern printing. Actinic
inspection test was also conducted using the programmed phase defect arrays formed on the test mask. Selete's upgraded
dark-field inspection tool was demonstrated to have its capability to detect a bump defect of 1.2 nm in height and 40 nm
in width at a detection probability of 90 % or larger. An extendibility of the actinic dark-field inspection to beyond half-pitch
22 nm node was also confirmed.
When a thinner absorber mask is applied to extreme ultraviolet (EUV) lithography for chip production, it becomes essential to a introduce light-shield border in order to suppress the leakage of EUV light from the adjacent exposure shots. In this paper, we evaluate the leakage of both EUV and out-of-band from light-shield border and clarify the dependence of lithographic performance on light-shield border structure using a small field exposure tool with/without spectral purify filter (SPF). Then we evaluate the lithographic performance of a thin absorber EUV mask with light-shield border of the etched multilayer type and demonstrate the merit of its structure using a full-field scanner operating under the currently employed condition of EUV source in which SPF is not installed.
The key challenge before EUVL is to make defect-free masks, for which it is important to identify the root cause of
defects, and it is also necessary to establish suitable critical mask defect size for the production of ULSI devices. Selete
has been developing EUV mask infrastructures such as a full-field actinic blank inspection tool and 199nm wavelength
patterned mask inspection tool in order to support blank/mask supplier in reducing blank/mask defects which impact on
wafer printing. In this paper, by evaluating the printability of programmed phase defects and absorber defects exposed
by full-field scanner EUV1, we demonstrate that defect detection sensitivities of ABI (actinic blank inspection) and PI
(patterned mask inspection) are higher than that of WI (wafer inspection) in HP32nm. The evaluations were done by
comparing the detection sensitivities of full-field actinic blank inspection tool, 199nm wavelength patterned mask
inspection tool, and wafer EB inspection tool. And then, based on the native defect analysis of blank/mask, we
ascertained that actinic blank inspection and patterned mask inspection developed at Selete, are effective in detecting
killer defects both at the main pattern and at light-shield border area.
One of the critical issues for extreme ultraviolet lithography masks is particle-free mask handling. We report that the number of particle adders on the front side of a mask in a dual pod can be reduced to less than 0.01 particles/cycle (>46-nm polystyrene latex) during the process of starting from the load port to placing an electrostatic chuck (ESC) in vacuum. In addition, we find that chucking the mask on the ESC causes serious issues. One of these issues is whether the masks will be electrically charged by chucking the ESC and whether some particles will be added on the front side. We measure the electric potential of the back and front sides of the mask and examine the particle adders. We find that when the mask is electrically floated, potential on the front side of the mask increases during ESC chucking; when the mask is released from the ESC, it is electrically charged. This electrification causes adhesion of the particles. Our experiments show that to protect the mask from particles, the mask must be grounded throughout the entire process. For electrification, we confirm that a dual-pod system is effective in protecting the mask from particles.
The impact of an EUV mask absorber defect with pattern roughness on lithographic images was studied. In order to reduce systematic line width roughness (LWR) of wafer printed patterns, the mask making process was improved; and in order to reduce random LWR, low line-edge roughness resist material and a critical dimension averaging method of multiple-exposure shots were introduced. Then, by using a small field exposure tool, a mask-induced systematic printed LWR was quantified and estimated at 32-nm half-pitch and 28-nm half-pitch. The measurement results of the critical mask absorber defect size were compared with the simulation, and the results were then discussed.
The key challenge before EUVL is to make defect-free masks hence it is important to identify the root cause of
defects, and it is also necessary to establish suitable critical mask defect size for the production of ULSI devices. Selete
has been developing EUV mask infrastructures such as a full-field actinic blank inspection tool and 199nm wavelength
patterned mask inspection tool in order to support blank/mask supplier in reducing blank/mask defects which impact on
wafer printing.
In this paper, we evaluate the printability of multilayer defects and of absorber defects exposed by a full-field scanner
EUV1, using full-field actinic/non-actinic blank inspection tool and 199nm wavelength patterned mask inspection tool.
And based on the results of native defect analysis of blank/mask, we ascertain that blank inspection with actinic is
necessary for mask fabrication in order to reduce the risk of missing phase defects, which hardly can be detected by
patterned mask inspection tool.
Currently, repair machines used for advanced photomasks utilize principle method like as FIB, AFM, and EB. There
are specific characteristic respectively, thus they have an opportunity to be used in suitable situation. But when it comes
to EUV generation, pattern size is so small highly expected as under 80nm that higher image resolution and repair
accuracy is needed for its machines. Because FIB machine has intrinsic damage problem induced by Ga ion and AFM
machine has critical tip size issue, those machines are basically difficult to be applied for EUV generation.
Consequently, we focused on EB repair tool for research work.
EB repair tool has undergone practical milestone about MoSi based masks. We have applied same process which is
used for MoSi to EUV blank and confirmed its reaction. Then we found some severe problems which show
uncontrollable feature due to its enormously strong reaction between etching gas and absorber material. Though we
could etch opaque defect with conventional method and get the edge shaped straight by top-down SEM viewing, there
were problems like as sidewall undercut or local erosion depending on defect shape. In order to cope with these
problems, the tool vender has developed a new process and reported it through an international conference [1].
We have evaluated the new process mentioned above in detail. In this paper, we will bring the results of those
evaluations. Several experiments for repair accuracy, process stability, and other items have been done under estimation
of practical condition assuming diversified size and shape defects. A series of actual printability tests will be also
included. On the basis of these experiments, we consider the possibility of EB-repair application for 20nm pattern.
We have developed an actinic full-field inspection system to detect multilayer phase defect with dark field imaging. A
new CCD camera was installed onto the system with an objective of throughput and inspection sensitivity improvement.
As the result, the throughput was improved from 14.25 to 4.75 hours per plate, and the detection probability for 1.2 nmhigh
40 nm-wide defect was found to be 95.7 %. This means that the system has a potential of its extendibility to beyond
22 nm HP inspection.
In this test, we evaluated the carbon contamination removal capabilities of various kinds of cleaning methods. And we
also evaluated the degradation of multilayer (with capping layer) caused by the cleaning process.
In the contamination removal test, the contamination was formed by a synchrotron irradiation. And in the degradation
test, we evaluated Ru-capping layer and Si-capping layer.
In the contamination removal test, the reflectivity recovery was confirmed in all cleaning conditions that were evaluated.
However, there were differences among the reflectivity recoveries.
In particular, plasma cleaning showed high removal capability. In VUV/O3 cleaning, the oxygen concentration
influenced the contamination removal capability.
In Si-capping layer, none of the cleaning conditions exhibited any significant reflectance change. On the other hand, in
Ru-capping layer, a decrease in reflectance was noticed in VUV/O3 cleaning with an oxygen concentration of 500ppm.
In a comparison between Ru-capping layer and Si-capping layer, no significant difference was noticed in SPM cleaning,
VUV/O3 with oxygen concentration 45ppm, and in plasma with N2/H2 gas condition.
At the Photomask Japan 2010, we reported on the cleaning process durability and the EUV light shielding capability of
FIB- and EB-CVD film based on carbon, tungsten and silicon containing precursors. The results were that the tungsten
based FIB-CVD film showed no loss of film thickness after dry cleaning process, and the calculation showed that 56nm
thick was sufficient for repairing clear defects on EUV mask with 51nm thick of absorber layer. On the other hand,
carbon based FIB-CVD film suffered considerable loss in its film thickness and needed more than 180nm thick even if
the 10nm thick of buffer layer between the CVD films and the capping layer supported the EUV light shield.
In this paper, we will report on a newly developed repair method of clear defects on EUV mask using an FIB technique.
The clear defects were repaired by removing or damaging the reflective ML (multi layer) underlying the clear defect area
instead of applying the conventional FIB-CVD (Focused Ion Beam-Chemical Vapor Deposition) films. After removing
the ML, the cross sectional pattern angle was approximately 83 degree and the sidewalls were covered with 15nm thick
of Si and Mo mixing layer caused by Ga ions exposure. The performance of defect repair was evaluated by SFET (Small
Field Exposure Tool) printability test. The exposure results showed that the ML etched area behaved as low reflection
area and the printed CDs were proportional to the mask opening CDs. The study also revealed that the ML etched pattern
was not sensitive to 50nm of focus error.
When a thinner absorber mask is applied to EUVL for ULSI chip production, it becomes essential to introduce EUV
light-shield border in order to suppress the leakage of EUV light from the adjacent exposure shots. Thin absorber mask
with light-shield border of etched multilayer adds to the process flexibility of a mask with high CD accuracy. In this
paper, we demonstrate the lithographic performance of a thin absorber mask with light-shield border of etched
multilayer using a full-field exposure tool (EUV1) operating under the current working condition of EUV source.
In EUV lithography (EUVL) it is important to protect a mask from the adhesion of particles because it is difficult to use
a pellicle. At Selete, we evaluated a dual-pod carrier and reported on its ability to protect a mask from particles. In the
evaluation the average number of particles added to the mask during several hundred handling-cycles was 0.4.
Therefore, it is very important to precisely count the number of particle adders. However, according to the specification
of the inspection tool, the counting error was greater than the average number of particle adders in the evaluation. In
addition, it is known that the error increases for particles with a size near the detection limit. In the evaluation, we
inspected a mask substrate four times and regarded signals detected multiple times as real particles. We studied the
counting error by assuming that the detection probability followed a static statistical fluctuation. We found that the
expected value of counting error was represented with the equation by the number of initial particles, particle adders,
capture rate, and inspection times. Under our evaluation condition, even if no quasi-particles existed, the counting error
by a single inspection was estimated to be approximately 4. However, the counting error by our evaluation (four
inspections) was estimated to be approximately 0.05. Therefore, we found that the reliability by multiple inspections was
much higher than that by a single inspection and that the number of particles near the detection limit could be found
precisely by multiple inspections. * This work was supported by NEDO.
In this paper, we will report on the cleaning process durability and light shielding capability of FIB- and EB-CVD
(Chemical Vapor Deposition) films which, are applied to repair clear defects on EUV mask. We evaluated tungsten
containing, and silicon containing precursors in addition to carbon based precursor. For the conventional photomasks, the
carbon based precursor is applied for repairing the clear defects because the reconstructed patterns by the carbon based
precursor have excellent printability. However, under the condition of EUV lithography, the optical property of carbon
deposited film is quite different.
From the stand point of beam, FIB-CVD films showed better cleaning process durability and light shielding capability
than EB-CVD film did. These differences are attributed to chemical components of the CVD films, especially with the
tungsten based FIB-CVD film that contains 44 atomic % of tungsten and 24 atomic % of gallium. The tungsten based
FIB-CVD film showed no loss of film thickness after dry cleaning, and the calculation showed that 56nmt was sufficient
for repairing clear defects on EUV mask with 51nmt of absorber layer. On the other hand, carbon based FIB-CVD film
suffered considerable loss in the film thickness and needed more than 180nm.
We have been developing an actinic full-field mask blank inspection system to detect multilayer phase defects with dark
field imaging. Detection probability with no false detection at full-field of a mask blank was improved, and then a
probability of capturing 1.5 nm-high and 60 nm-wide defects was attained to be 100 %. A mask blank was inspected, and
a small native defect with its top dimensions of 1.1 nm in height and 20 nm in width was successfully detected. The
bottom dimensions of the smallest two defects were estimated with simulation so that the experimental and simulated
signal intensities could be correlated. Using the estimated bottom dimension, the defects were found to impact on CD of
22 nm L/S pattern. Assuming that the bottom dimension was the same as the top dimension, CD variation due to the
defects was found to be approximately half of those of the estimated bottom dimension. This means that some internal
structure within the defect is a key factor in the estimation of impact on wafer. The detection probability improvement
also attained 100% detection of the both defects.
Since 2005, Canon, Nikon, and Entegris have been jointly developing an EUV mask carrier based on the "Dual Pod"
concept in place of a pellicle. By using our MIRAI-Selete Mask Protection Engineering (MPE) tool, a few prototypes
were tested for performance of particle protection in the case of both mask shipping and its handling in vacuum. As a
result, the fundamental mechanical specifications of the Dual pod were registered as those of SEMI "E152" of an EUV
Pod used in EUV mask. It is found that the latest pod named "cnPod", which is based on the SEMI E152, performs
almost satisfactorily. Although superior protection performance with respect to external particles has been confirmed, the
performance with respect to internal particles laid on the base plate of an inner pod is still under investigation. Therefore,
we evaluate the influence of the internal particles laid on the base-plate surface for the first time. In order to confirm
whether the particles on the base plate are transferred to the mask-patterned surface, well-characterized particles are
dispersed on the base-plate surface. By using this contaminated base plate and the MPE tool, mask handling experiments
are conducted. Under our experimental conditions, it is found that the number of test particles transferred to the mask
surface is very low compared to the total number of particles on the base-plate surface.
When a thinner absorber mask is practically applied to the extreme ultraviolet lithography for ultra large scale integration chip production, it is inevitable to introduce an extreme ultraviolet (EUV) light shield area to suppress leakage of the EUV light from adjacent exposure shots. We believe that a light-shield border of the multilayer etching type is a promising structure in terms of mask process flexibility for higher mask critical dimension accuracy. We evaluate the etching impact of the absorber and multilayer on the mask flatness and image placement change through the mask process of a thin absorber mask with a light-shield border of the multilayer etching type structure. We clarify the relation between mask flatness and mask image placement shift.
As regard to EUV-Mask natural defect printability evaluation, several methods have been employed in the past.
However, because of their inherent difficulties those methods have not been able to provide precise answers. In this
paper, we used two improved methods for the evaluation of EUV-Mask natural defect printability capable of providing
precise answers. One improvement involves marking of the defect locations which makes it easier to find the wafer
printed defects; the other method involves CD-averaging of multiple exposure shots that results in more quantifiable
answers.
Impact of EUV mask absorber defect with pattern-roughness on lithographic images was studied. In order to reduce
systematic line width roughness (LWR) of wafer printed pattern, mask making process was improved; and in order to
reduce random LWR, low line edge roughness (LER) resist material and a CD averaging method of multiple exposure
shots were introduced. Then by using a Small Field Exposure Tool (SFET), mask induced systematic printed LWR was
quantified and estimated at 32nm HP and 28nm HP. The measurement results of the critical mask absorber defect size
were compared with simulation; and the results are then discussed.
To protect the reticle during shipping, storage and tool handling, various reticle pod concepts have been proposed and
evaluated in the last 10 years. MIRAI-Selete has been developing EUV reticle handling technology and evaluating EUV
reticle pods designed using "Dual Pod Concept" for four years. The concept was jointly proposed by Canon and Nikon
at the EUV mask technology and standards workshop at Miyazaki in November 2004; a mask is doubly protected by an
inner pod and an outer pod and the mask is carried into an exposure tool with the inner pod. Canon, Nikon and Entegris
have started collaboration in 2005 and developed three types of EUV pod prototypes, alpha, beta and gamma. The
gamma pods were evaluated by MIRAI-Selete and the superiority of the dual pod concept has been verified with many
experimental data on shipping, storage and tool handling. The dual pod concept was standardized as SEMI E152-0709
"Mechanical Specification of EUV Pods for 150mm EUVL Reticles" in 2009. Canon, Nikon and Entegris have
developed a new pod design compatible with SEMI E152; it has a Type A inner baseplate for uses with EUV exposure
tools. The baseplate has two alignment windows, a window for a data matrix symbol and five pockets as the front edge
grip exclusion volumes. In addition to the new features, there are some differences between the new SEMI compliant
pod design and the former design "CNE-gamma", e.g. the material of the inner cover was changed to metal to reduce
outgassing rate and the gap between the reticle and the side supports were widened to satisfy a requirement of the
standard. MIRAI-Selete has evaluated the particle protective capability of the new SEMI compliant pods "cnPod" during
shipping, storage and tool handling in vacuum and found the "cnPod" has the excellent particle protective capability and
the dual pod concept can be used not only for EUVL pilot line but also for EUVL high volume manufacturing.
Multilayer defects embedded in EUV mask blanks are of primary concern in making usable mask because the multilayer
defects as small as 1.5 nm in height cause phase shifts and are most likely to be printable on wafers. To detect such phase
defects, we have developed an actinic (at wavelength) full-field EUV mask blank inspection tool equipped with dark-field
imaging optics. Inspection performance was demonstrated by a full-field mask blank inspection of a test mask blank
to detect its programmed phase defects and native phase defects. A potential of detecting phase defects among the
absorber patterns was also explored by inspecting masks with dot bump defects sitting among the absorber lines and line
bump defects perpendicular to the absorber lines. For the phase defect printability study, the test mask was exposed using
an EUV exposure tool (EUV1) at Selete. Simulation of projected image was also conducted using FDTD method.
Multilayer defect printability for varying location of the multilayer phase defects relative to the absorber line patterns
were evaluated
In this paper, we will report on our experimental results on the impact of inspection system optics on mask defect
detection sensitivity. We evaluated the capability of detecting defects on the EUVL masks by using a new inspection
tool (NPI6000EUVα) made by NuFlare Technology, Inc. (NFT) and Advanced Mask Inspection Technology, Inc.
(AMiT). This tool is based on NPI-5000 which is the leading-edge photomask defect inspection system using 199nm
wavelength inspection optics. The programmed defect mask with LR-TaBN absorber was used which had various sized
opaque and clear extension defects on hp-180nm, hp-128nm, and hp-108nm line and space patterns. According to the
analysis, to obtain optimum sensitivity for various types of defects, using both C- and P-polarized illumination
conditions were found to be effective. At present, sufficient defect-detection sensitivity is achieved for opaque and clear
extension defects in hp128nm (hp32nm at wafer). For hp108nm (hp27nm at wafer), using both C- and P- polarized
illumination is effective. However, further developments in defect-detection sensitivity are necessary.
A novel EUV mask inspection tool with 199nm laser source and super-resolution technique has been developed.
This tool is based on NPI-5000PLUS, which is a photo-mask inspection tool for hp2X nm node and beyond. In order to
implement EUV mask inspection with only a short time for mask set-up, reflected illumination type alignment optics to
guide alignment mark and adjust mask coordinate with visible illumination light are equipped. Moreover, to inspect EUV
masks for hp2X nm and beyond, the image detection optics with the novel polarized illumination technique is
incorporated in this tool. Image contrast enhancement was confirmed by experiments and simulations.
When thinner absorber mask is practically applied to the EUVL for the ULSI chip production, it is inevitable to
introduce EUV light shield area in order to suppress leakage of the EUV light from adjacent exposure shots. We believe
that light-shield border of multilayer etching type is promising structure in terms of mask process flexibility for higher
mask CD accuracy
In this paper, we evaluate etching impact of absorber and multilayer on mask flatness and image placement change
through mask process of thin absorber mask with light-shield border of multilayer etching type structure. And then, we
clarify the relation between mask flatness and mask image placement shift.
We have been developing an actinic full-field mask blank inspection system to detect multilayer phase defects with dark
field imaging. Using the current system, we have analyzed the probability of defect detection and occurrence of false
defects with variations in defect signal intensity and in background intensity. The result indicates that the size of the
smallest defect for 100 % detection with no false defect at full-field inspection is 2.0 nm in height and 78 nm in width. A
100 % detection of smaller defects, 1.5 nm high and 60 nm wide, with no false defect at full-field inspection requires
46 % reduction of the detection threshold. This means that for further improvement of defect sensitivity, a 46 %
reduction of CCD noise level, or improvement of the defect detection algorithm, will be required.
We evaluated a FIB-CVD (Focused Ion Beam-Chemical Vapor Deposition) process for repairing clear defects on EUV
masks. For the CVD film, we selected Carbon material. Our simulation result showed that the properties of wafer-prints
depended on the density of the carbon films deposited for repairing the clear defects. Especially, when the density of
carbon film was higher than that of graphite the properties of the wafer-prints came out to be almost same as obtained
from Ta-based absorbers. For CVD, in this work we employed typical carbon based precursor that has been routinely
used for repairing photomask patterns. The defects created for our evaluation were line-cut defects in a hp225nm L/S
pattern. The performance of defect repair was evaluated by SFET (Small Field Exposure Tool) printability test. The
study showed that the focus characteristic of repaired region deteriorated as the thickness of the deposition film
decreased, especially when the thickness went below the thickness of the absorber. However, when the deposition film
thickness was same as that of the absorber film, focus characteristic was found to be excellent. The study also revealed
that wafer-print CDs could be controlled by controlling the CDs of the deposition films. The durability of deposition
films against the buffer layer etching process and hydrogen radical cleaning process is also discussed.
We have developed an actinic full-field mask blank inspection system to detect multilayer phase defects with dark field
imaging. Using this system a non-commercial mask was inspected and real defects were detected by setting the system at
low false detection threshold. A 1.5 mm square area (containing no absorber) was inspected three times, and probabilities
of defect detection and false detection were evaluated. Of the total number detected, 81.5 % of them exhibited 100%
percent probability of detection, while 0.8 % of them indicated false detection. The same area was also inspected with a
conventional inspection system, and both inspection results then were compared. Among the defects detected, 94 % of
them could be detected only with the actinic system, while 1.1 % of them could be detected only with the conventional
laser-based inspection system. The detected defects were observed with AFM and SEM. In summary, phase defects
smaller than 100 nm could be detected only with the actinic system, while particles smaller than 200 nm could be
detected only with the conventional system.
In this paper, we will report on our experimental and simulation results on the impact of EUVL mask absorber
structure and of inspection system optics on mask defect detection sensitivity. We employed a commercial simulator
EM-Suite (Panoramic Technology, Inc.) which calculated rigorously using FDTD (Finite-difference time-domain)
method. By using various optical constants of absorber stacks, we calculated image contrasts and defect image signals as
obtained from the mask defect inspection system. We evaluated the image contrast and the capability of detecting
defects on the EUVL masks by using a new inspection tool made by NuFlare Technology, Inc. (NFT) and Advanced
Mask Inspection Technology, Inc. (AMiT). This tool is based on NPI-5000 which is the leading-edge photomask defect
inspection system using 199nm wavelength inspection optics. The programmed defect masks with LR-TaBN and LRTaSi
absorbers were used which had various sized opaque and clear extension defects on hp-160nm, hp-225nm, and hp-
325nm line and space patterns. According to the analysis, reflectivity of EUVL mask absorber structures and the
inspection optics have large influence on image contrast and defect sensitivity. It is very important to optimize absorber
structure and inspection optics for the development of EUVL mask inspection technology, and for the improvement of
performance of EUV lithographic systems.
"Reticle protection during storage, handling and use" is one of the critical issues of EUV lithography because no
practical pellicle has been found for EUV reticles as yet. The front surface of an EUV reticle has to be protected from
particles larger than 20-30 nm to maintain the image quality projected on the wafer plane, and the backside also has to be
protected to maintain the flatness of the reticle chucked on an electrostatic chuck (ESC). In this paper, we are focusing
on particles on the backside of a reticle. If a particle lies between a reticle and a chuck, it has a strong impact on the
flatness of the reticle, and the wafer overlay is degraded by out-of-plane distortion (OPD) and in-plane distortion (IPD)
caused by the particle. From this point of view, we need to know the maximum allowable size of particles on the
backside of a reticle. MIRAI-Selete introduced an experimental setup that can measure the flatness of the chucked reticle
in a vacuum. Two electrostatic chucks were alternately installed in the vacuum chamber of Mask Protection Engineering
Tool (MPE Tool), a reticle is automatically carried from a reticle pod to the chuck in the tool. The flatness of the reticle
can be measured by an interferometer through the viewport underneath the chamber. We report results of experimental
evaluation about the relationship between the reticle OPD and the initial size of particles and mention the maximum
allowable size of particles between a reticle and a chuck.
One of the critical issues for EUVL masks is clean and particle-free mask handling. We reported that the number of
particle adders on the front side of a mask in the dual pod during the process from the load port to putting on the
Electrostatic chuck (ESC) in vacuum could be reduce to less than 0.01 particle/cycle (≥46 nm). In addition, we found
that chucking the mask on the ESC caused two serious issues. The first is that many particles stick to on the backside of
the mask after chucking on the ESC, raising the question of whether the particle adders on the backside will travel to the
front side. We examined the travel of these particles using the substrates after chucking and polystyrene latex (PSL)
substrates that were dispersed on the backside. These experiments show that there is very little probability that particles
on the backside will travel to the front side. The second issue is whether the mask blanks will charge up by chucking on
the ESC and some particles will add on the front side. We measured the electric potential of the back and front sides of
the mask and examined the particle adders. Our experiments revealed that to protect the mask from the particles, the
mask must be grounded from the beginning to the end. For these two issues, we confirmed that a dual pod system works
effectively to protect the mask from particles. This work is supported by NEDO as a part of the EUV mask program.
We have developed an actinic full-field inspection system to detect multilayer phase defects with dark field imaging capabilities. With this inspection system programmed phase defects on a mask blank were observed, and their image quality was compared with that from a proof of concept (POC) tool. The maximum intensity of normalized defect signal with the inspection system is 3.1 times larger and the full width at the half maximum (FWHM) of the defect signal is 13 % narrower than those with the POC tool. And therefore, the image quality of this inspection system is considered to be superior to that of the POC tool. In the case where the defect image is captured with stage scanning using time delay integration (TDI) method, degradation of defect signals caused by stage scanning is evaluated. With a scan velocity of 1mm/s, the defect signal indicates a 19 % decrease in the maximum intensity and a 13 % extension to the FWHM as compared with those from the static mode. We believe that this degradation of defect signal is caused by the variation of scan velocity and yawing of the scan stage. The relation between defect sensitivity and scan velocity is analyzed with signal to noise ratio (SNR). As a result, a scan velocity of 1mm/s plays a role that is barely sufficient to detect a 1.5 nm-high 60 nm-wide defect with no false defect detection. Noise reduction of CCD or improvement of inspection algorithm will be required.
The effect of mask absorber thickness on defect printability in EUV lithography was studied. In case of very thin
absorber, when used for EUVL mask, it became necessary to set specifications for mask defects for the
manufacturability of ULSI devices because mask absorber thickness could impact defect printability. We prepared
programmed mask defects of LR-TaBN absorber with various thicknesses. We then investigated defect printability of
thin absorber mask with Small Field Exposure Tool (SFET) by comparing the data with simulation results.
We have developed an actinic full-field EUV mask blank inspection tool that consists of an EUV light source, a 26X Schwarzschild optics for dark-field imaging, an EUV-sensitive backside-illuminated charge-coupled-device (BI-CCD) camera, and a mechanical mask stage with a stroke range of 160 mm. A critical illumination system is employed by setting ellipsoidal and plane mirrors to illuminate an area of mask blank that is to be inspected. Since in this setup a circular area on the mask blank with approximately 0.8 mm diameter is illuminated, a 0.5×0.5 mm2 square image area can be addressed without moving the mask stage. The inspection tool can also be operated under time delay and integration (TDI) mode by scanning the mask stage with a constant velocity. In spite of comparatively large effective pixel size of 500 nm on the mask blank, small defect-to-pixel ratio such as 0.12 for phase defect of 60 nm in width and 1.5 nm in height, was established as a measured value of defect detection sensitivity by using both static imaging mode and time-delay and integration (TDI) operation mode.
EUV mask damage caused by Ga focused ion beam irradiation during the mask defect repair was studied. The
concentration of Ga atom implanted in the multilayer through the buffer layer and distributions of recoil atoms were
calculated by SRIM. The reflectivity of the multilayer was calculated from the Ga distribution below the capping layer
surface. To validate the calculation, Ga focused ion beam was irradiated on the buffer layer. The EUV reflectivity was
measured after the buffer layer etching process. The measured reflectivity change was considerably larger than the one
predicted from the absorption of light by the implanted Ga. The large reflectivity loss was primarily due to the absorption
of light by chromium silicide residue which was generated by the intermixing of the buffer and the capping layer. Both
lowering of the acceleration voltage and using thicker buffer layer were found to be effective in reducing this intermixing.
The reduction of the reflectivity loss by using thicker buffer layer was confirmed by our experiments. An aerial image of
patterns with etching residue formed by the intermixing was simulated. When the thickness of the intermixed layer
happened to be 8 nm and the size of the resulting residue was larger than 100 nm, then the impact of the estimated
absorption by the residue on the linewidth of 32 nm hp line pattern became more than 5 %.
The effect of mask structure with light shield area on the printability in EUV lithography was studied. When very
thin absorber on EUVL mask is used for ULSI application, it then becomes necessary to create EUV light shield area
on the mask in order to suppress possible leakage of EUV light from neighboring exposure shots. We proposed and
fabricated two types of masks with very thin absorber and light shield area structure. For both types of masks we
demonstrated high shield performances at light shield areas by employing a Small Field Exposure Tool (SFET).
In this paper, we will report on our experimental and simulation results on the impact of EUVL mask absorber
structure and of inspection system optics on mask defect detection sensitivity. We employed a commercial simulator
EM-Suite (Panoramic Technology, Inc.) which calculated rigorously using FDTD (Finite-difference time-domain)
method. By using various optical constants of absorber stacks, we calculated image contrasts and defect image signals as
obtained from the mask defect inspection system. We evaluated the image contrast and the capability of detecting
defects on the EUVL masks by using a new inspection tool made by NuFlare Technology, Inc. (NFT) and Advanced
Mask Inspection Technology, Inc. (AMiT). This tool is based on NPI-5000 which is the leading-edge photomask defect
inspection system using 199nm wavelength inspection optics. The programmed defect masks with LR-TaBN and LRTaSi
absorbers were used which had various sized opaque and clear extension defects on hp-160nm, hp-225nm, and hp-
325nm line and space patterns. According to the analysis, reflectivity of EUVL mask absorber structures and the
inspection optics have large influence on image contrast and defect sensitivity. It is very important to optimize absorber
structure and inspection optics for the development of EUVL mask inspection technology, and for the improvement of
performance of EUV lithographic systems.
We evaluated a new FIB-GAE (Focused Ion Beam-Gas Assisted Etching) repairing process for the absorber defects on
EUVL mask. XeF2 gas and H2O gas were used as etching assist agent and etching stop agent respectively. The H2O gas
was used to oxidize Ta-nitride side-wall and to inactivate the remaining XeF2 gas after the completion of defect repair.
At the Photomask Japan 2008 we had reported that side-etching of Ta-nitride caused CD degradation in EUVL. In the
present paper we report on the performance of defect repair by FIB, and of printability using SFET (Small Field
Exposure Tool). The samples evaluated, were in form of bridge defects in hp225nm L/S pattern. The cross sectional
SEM images certified that the newly developed H2O gas process prevented side-etching damage to TaBN layer and
made the side-wall close to vertical. The printability also showed excellent results. There were no significant CD
changes in the defocus characterization of the defect repaired region. In its defect repair process, the FIB method showed
no signs of scan damage on Cr buffered EUV mask. The repair accuracy and the application to narrow pitched pattern
are also discussed.
We have developed an actinic full-field inspection system to detect multilayer phase defect with dark field imaging. With
this system, programmed phase defects on a mask blank were observed. The system can detect phase defects caused by a
1.5 nm high and 60 nm wide protrusion on a multilayer surface. Background intensity and signal to background ratio
(SBR) of the observed defect images are analyzed with simulation. The background intensities were calculated with the
model that it is generated by light scattered from mask surface roughness. The result indicates that the larger outer NA
(numerical aperture) leads to an increase in the background intensity. In this correlation of NA with the background
intensity, the calculation and experimental results correspond well. The defect images were simulated using the point
spread function (PSF) of flare generated by mirror surface roughness employing Fourier technique. The SBRs of
simulated defect images corresponded well with the SBRs of the observed images. These results support the calculation
and simulation models are proper.
EUV mask damage caused by Ga focused ion beam irradiation during the mask defect repair was studied. The
concentration of Ga atom implanted in the multilayer through the buffer layer was calculated by SRIM. The reflectivity
of the multilayer was calculated from the Ga distribution below the capping layer surface. To validate the calculation, a
multilayer sample was irradiated with Ga FIB, and then EUV reflectivity was measured. The measured reflectivity
change was in good agreement with the calculated value. An aerial image of patterns with Ga implanted region was
simulated. The impact of the estimated Ga absorption on the linewidth of 32 nm hp line pattern was found to be less than
1 nm.
To protect the reticle during shipping and storage, several reticle pod concepts have been proposed and evaluated in the
last 10 years. MIRAI-Selete has been developing EUV reticle handling technology and evaluating EUV reticle pods for
two years. In this paper, we report results of shipping tests and storage tests using CNE pods; the CNE pod is
designed by Entegris using "Dual Pod Concept" which Canon and Nikon jointly proposed in 2004. The pod consists of
an inner pod and an outer pod. The inner pod has two components, a baseplate and a cover; the base plate protects the
reticle front surface and the cover protects the back surface from particle contamination in shipping, storage and loading
to a reticle chuck in an exposure tool. The outer pod is a RSP-200 slightly modified to contain the inner pod in it. We
carried out thirty shipping tests and several storage tests and found the CNE pods had very promising protecting
performance during shipping and storage.
The effects of mask absorber thickness on printability in EUV lithography was studied from the viewpoint of
lithographic requirements which can give high imaging contrast and reduce shadowing effect. From lithography
simulation, optimum thickness range of mask absorber (LR-TaBN) for exposure latitude was predicted, and the effect
of absorber thickness on MEF and H-V (Horizontal - Vertical) printed CD difference was determined using resist blur
model. From printability experiments with a Small Field Exposure Tool (SFET) and with high resolution resist,
optimum thickness of LR-TaBN absorber was demonstrated. When thinner absorber mask is employed in EUVL for
ULSI chip production, it becomes necessary to introduce EUV light shield area in order to suppress the leakage of EUV
light from neighboring exposure shots. Resist pattern CD change from the neighboring exposure shots was estimated
by lithography simulation.
The impact of mask blank surface roughness and mirror surface roughness on the defect inspection signal is presented.
The power spectrum density (PSD) of the roughness is assumed to be inversely proportional to the square of the spatial
frequency. The PSD was estimated based on the mask blank surface roughness (rms), and then the background intensity
was calculated using the PSD of the spatial frequencies between the inner and outer NA. The results indicate that the
larger outer NA leads to an increase in the background intensity, and that a mask blank roughness of 0.15 nm generates a
background intensity of 0.15 - 0.23 %. We also analyzed the effect of the mirror surface roughness on the background
intensity and on the defect signal contrast. A point spread function (PSF) of scattered light from the mirror surface was
calculated using the estimated PSD, and the defect images were simulated for the inspection optics by employing Fourier
technique. The degradation of defect images caused by the mirror roughness was calculated by using the convolution of
the PSF with the simulated images. Based on the results, it is concluded that the roughness has a large impact on the
maximum intensity of the defect signal but has little effect on the background intensity. It was also learned that the
degradation rate of the defect signal contrast is approximately proportional to the square of the mirror roughness.
We utilized a newly developed low acceleration voltage FIB (Focused Ion Beam) system and evaluated the process for
repairing the absorber layer on EUVL mask.
During the etching of the absorber layer, which is a step in conventional repair technique, a phenomenon of side-etching
of Ta-nitride layer with XeF2 gas was observed. This phenomenon was considered to be caused by the isotropic
etching of the Ta-nitride layer with XeF2 gas. We then added another gas for etching and evaluated the new process to
prevent the side-etching of Ta-nitride layer.
In this paper, we will report four evaluation results of EUVL mask pattern defect repair using FIB-GAE (Gas Assisted
Etching). The first one is the problem of pattern topography after conventional repairing process and the reaction
mechanism of gas assisted etching of Ta based absorber. The second evaluation result is addressed in two parts. One is
the evaluation of a new gas assisted etching process that employs an additional gas that has an ability to control the
etching rate of absorber layer. The second part addresses the repairing accuracy of EUVL mask pattern. The third is the
basic etching performance e.g. etching rate of Ta based absorber, Cr based buffer, and Si based capping layer. The fourth
and the last evaluation is the application of the newly developed gas assisted etching process on programmed bridge
defect in narrow pitched L/S patterns.
In EUV lithography, particle-free handling is one of the critical issues because a pellicle is impractical due to its high
absorption. To investigate this subject, we have developed a mask protection engineering tool that allows various types
of tests to be carried out during the transfer of a mask or blank in air and in vacuum. We measured the number of particle
adders during the transfer of a mask blank in a dual-pod carrier and in an RSP200 carrier. We found that the number of
particle adders (>=46 nm PSL) to a mask blank in a dual pod is less than 0.01 over the whole process from taking the
blank out of the load port in air to putting it in the electrostatic chuck chamber in vacuum. Through various experiments,
the number of particle adders during any process using a dual pod was found to be very few and very stable. In contrast,
for a naked mask, many particle adders were found in large variations. Below one particle were added in over 80% of
experiments on a dual pod and in about 20% of experiments on a naked mask. Based on the test results, we can conclude
that the use of dual pod is an excellent particle-free transfer technique.
"Reticle protection during storage, handling and use" is one of the critical issues of EUV lithography because no
practical pellicle has been found for EUV reticles as yet. The front surface of an EUV reticle has to be protected from
particles larger than 20-30 nm to maintain the image quality on the wafer plane, and the backside also has to be protected
to maintain the flatness of the reticle chucked on an electrostatic chuck (ESC). In this paper, we are focusing on particles
on the backside of the reticle. If a particle lies between the reticle and the chuck, it has a strong impact on the flatness of
the reticle, and the wafer overlay is degraded by out-of-plane distortion (OPD) and in-plane distortion (IPD) due to the
particle1-5. From this point of view, we need to know the maximum permissible size of particles on the backside of the
reticle. MIRAI-Selete introduced an experimental setup that can measure the flatness of the chucked reticle in a vacuum.
An electrostatic chuck is installed in the vacuum chamber of Mask Protection Engineering Tool (MPE Tool)6, a reticle is
automatically carried from a reticle pod to the chuck in the tool. The flatness of the reticle can be measured by an
interferometer through a viewport underneath the chamber. We can measure the reticle flatness with 3-nm@rms
reproducibility using this setup. We report results of experimental evaluation about the relationship between the reticle
OPD, the size of particle and the chucking force of ESC.
The deposition characteristics of carbon film on EUV mask surface, the impact of carbon deposition on lithography
performance, and cleaning of deposited carbon film on EUV mask are studied. The density of the carbon film was found
to be nearly half of that of graphite by X-ray reflectivity measurement. The impact of carbon deposition on the
lithography performance was simulated by SOLID-EUV. The CD variation by carbon deposition on the mask depends
on the deposition profile on the absorber pattern. Intentionally created contaminated masks were treated by a cleaning
process using atomic hydrogen. The cleaning efficiency and durability of film materials are discussed.
Selete launched a development program on EUV lithography and related mask technology in April 2006. The program is
based on the concept of "lithography design and integration." It covers a wide range of areas that require further effort to
get EUVL ready for volume production and was formulated on the basis that the issues should be considered from a
variety of standpoints, such as acceleration of the development of key lithographic components, verification that EUVL
is actually suitable for mass production, the construction of mask infrastructure, and the improvement of EUV-specific
reliability and productivity. Two exposure tools have been installed as basic infrastructure: the small-field exposure tool
(SFET) and the full-field exposure tool (EUV1). The objectives of the SFET installation are acceleration of the
development of resist materials and processes, optimization of the mask structure and materials, and the evaluation of the
exposure tool technology with regard to such things as imaging performance, stability, and the lifetimes of the optics and
source components. The objective of the EUV1 installation is to demonstrate that lithography integration is a viable path
to making EUV lithography a practical production technology. We found that the SFET provides both excellent
resolution and high tool activity. This high performance helps us to obtain a clear understanding of the current level of
EUVL performance and enables us to learn many things that can be fed back into the development program in the beta
stage. A 1st static exposure with the EUV1 resolved 30-nm dense and isolated lines and 30-nm holes. The potential
resolution was found to be as good as 28 nm. Although progress was made regarding EUV resist sensitivity and LWR,
further progress is needed. A tool for analyzing out-gassing in EUV resists was found to facilitate the development of
both resist materials and contamination control measures for exposure tools. A prototype full-field actinic inspection
system for mask blanks is now under development and should become operational in the 2Q of 2008. A mask protection
engineering (MPE) tool was used to show that a dual-pod carrier is very effective in protecting a mask from particles.
Mask pattern defect inspection technology using a DUV wavelength of 199 nm and defect repair technology based on an
FIB for EUV mask fabrication are also being developed. This work was supported in part by NEDO.
The impact of mask absorber properties on printability in EUV lithography was studied from the viewpoint of
lithographic requirements which can give high imaging contrast and reduce the shadowing effect. By using the
refractive indices of the elements and compounds employed as absorbers, their reflectivity on multilayer blanks, aerial
image on wafer plane and printed CDs depending on absorber thicknesses were simulated. This predicted an optimum
Ta-based absorber's thickness. Several patterned masks of LR-TaBN absorber with various thicknesses were prepared.
Each patterned mask was exposed with the newly developed small-field-exposure-tool (SFET). It was demonstrated
that optimized absorber thickness can, without loss of printability performance, reduce CD difference between
horizontal and vertical pattern that has been known to be caused by shadowing effect.
One of the key issues in extreme ultraviolet lithography (EUVL) is the influence of defects on a mask because of the
high printing resolution of EUVL. In order to address this issue, it is necessary to estimate the critical size of an absorber
pattern defect and that of a repaired defect. The repair of an opaque defect by milling or of a clear defect by deposition
might not be perfect; so the area, height, and optical constant of the repair material must be taken into consideration. By
estimating the threshold of calculated aerial images, the critical dimension (CD) that can be printed was found to equal
the square root of the defect area. For the repair of opaque defects, residual Ta was found to be more likely to cause poor
printing than the etching of the multilayer by excessive milling. Since a clear defect is repaired with Ta with the same
optical properties as the absorber material, the CD error in printing is mainly caused by the repair of a CD error and is
not caused by an error in height that is less than ±25% of the height of the Ta absorber. The optimal optical constant of
the repair material was estimated by varying the refraction coefficient from 0.9199 to 0.9999 and the extinction
coefficient form 0.0001 to -0.0451. We found that carbon is a useful repair material that provides a CD error of at most
±0.5 nm around a defect with an area of 64 nm because the maximum refraction should be below 0.97.
In this paper, we will report two evaluation results. One is the relationship between EUVL mask structure and image
contrast values captured by 199nm inspection optics. The other is the influence of mask structure on defect inspection
sensitivity.
We utilized a commercially available DUV inspection system that has the shortest inspection wavelength at 199nm.
Using the 199nm inspection optics, enough image contrast values on hp32nm 1:1 lines and spaces using ArF-half tone
(HT) mask were obtained. On the other hand, image contrast values were not sufficient for conventional EUVL mask
that have a 70nm absorber layer thickness. To improve the contrast values of mask pattern image, we evaluated the
effect of absorber layer thickness on inspection image contrasts. As a result, reducing the thickness of the absorber layer
to 44nm, enough image contrast values of hp32nm 1:1 lines and spaces patterns were obtained.
In this paper, the influence of the thickness of absorber layer on inspection sensitivities for opaque and clear extension
defects are also discussed.
Temperature of EUV mask surface under inspection laser beam irradiation is modeled and simulated. Various conditions
including beam power, beam size, irradiation time, and wavelength are considered. Calculation program for this study
has two components: at first, average power passing through the film is calculated from optical properties of materials,
and then heat transfer equations are solved using finite difference method. Temperature of multilayer below the absorber
depends on the optical properties of absorber film surface. At the wavelength of deep ultraviolet region, temperature of
multilayer below the absorber rises higher than in the temperature of multilayer directly exposed to the beam.
We have developed a mask protection engineering tool (MPE Tool) that simulates various types of tests during the
transfer of a mask or blank in air and in vacuum. We performed mask transfer experiments to investigate particle-free
mask handling techniques using the MPE and mask inspection tools. We measured the number of particles accumulated
during the transfer of the mask blanks. Less than 0.3 particles were added over a path from a load port (in air) to an ESC
chamber (in vacuum) and more than half the particles accumulated appeared during the pumping down and purging steps
in the load-lock chamber. Consequently, we consider that pumping down and purging are the most important steps for
particle-free mask handling.
We evaluated the capability of a commercially available DUV system equipped with
reflective inspection optics with the shortest inspection wavelength of 199nm in detecting
pattern defect on EUVL mask of hp45nm programmed defect pattern. The sensitivity of the
system for opaque extension defects for hp45nm node was quite acceptable but for clear
extension defects the sensitivity of the system was rather poor. In this paper, the influence of
base pattern size on inspection sensitivities for opaque and clear extension defects is discussed.
The detectability of a small phase defect on a multilayer-coated mask blank was investigated by using electromagnetic simulation. When a smoothing deposition of multilayer coating is used the inspection signal from the phase defects is characterized not only by a top surface topography of the multilayer but also by bottom topography. To understand the impact of the bottom topography we first calculated the phase shift of reflected EUV light from multilayers with various bi-layer thicknesses since the smoothing effect may be equivalent to the local multilayer thickness variation. Then, we estimated the actinic inspection signal intensity from bump, pit, line, and groove defects taking into account the phase shift due to bi-layer thickness change and the phase change due to the top surface topography. Simulation results revealed that the phase shift due to the top surface topography was enhanced by smoothing deposition for both convex and concave shaped phase defects. Thus the bump defect is detected as higher bump than the actual height of top surface and the pit defect is detected as a deeper pit than the surface depth.
We, MIRAI-Selete, started a new EUV mask program in April, 2006. Development of EUV mask handling technology is
one of the key areas of the program. We plan to develop mask handling technology and to evaluate EUV mask carriers
using Lasertec M3350, a particle inspection tool with the defect sensitivity less than 50nm PSL, and Mask Protection
Engineering Tool (named "MPE Tool"). M3350 is a newly developed tool based on a conventional M1350 for EUV
blanks inspection. Since our M3350 has a blank flipping mechanism in it, we can inspect the front and the back surface
of the blank automatically. We plan to use the M3350 for evaluating particle adders during mask shipping, storage and
handling. MPE Tool is a special tool exclusively developed for demonstration of pellicleless mask handling. It can
handle a mask within a protective enclosure, which Canon and Nikon have been jointly proposing1, and also, can be
modified to handle other type of carrier as the need arises.
KEYWORDS: Photomasks, Etching, Computer aided design, Lithography, Transmittance, Process control, Opacity, Data processing, Scanning electron microscopy, CAD systems
We have reported the FIB repair system with low acceleration voltage is applicable to 65nm generation photomasks. Repair technology beyond 65nm generation photomasks requires higher edge placement accuracy and more accurate shape. We developed two new functions, "Two Step Process" and "CAD Data Copy". "Two Step Process" consists of primary process and finishing process. The primary process is conventional process, but the finishing process is precise process to control repaired edge position with sub-pixel order. "Two Step Process" achieved edge placement repeatability less than 3nm in 3sigma. At "CAD Data Copy", defects are recognized with comparison between shape captured from a SIM image and that imported from a CAD system. "CAD Data Copy" reproduced nanometer features with nanometer accuracy. Thus the FIB repair system with low acceleration voltage achieves high performance enough to repair photomasks beyond 65nm generation by using "Two Step Process" and "CAD Data Copy".
Repair technology for 65nm generation photomasks requires more accurate shape and transmittance. The objective of this study is to evaluate FIB repair process with low acceleration voltage. The evaluation items were imaging impact, defect visibility, repaired shape, through focus behavior, repeatability of edge placement and controllability of repair size. In conclusion, we confirmed that FIB repair process with low acceleration voltage is applicable to 65nm generation photomasks.
The usage of ArF immersion lithography for hp 65nm node and beyond leads to the increase of mask error enhancement factor in the exposure process. Wavelength of inspection tool is required to consistent with wavelength of lithography tool. Wavelength consistency becomes more important by the introduction of phase shift mask such as Tri-tone mask and alternating phase shift mask. Therefore, mask inspection system, whose inspection light wavelength is 199nm, has been developed. This system has transmission and reflection inspection mode, and throughput, using 70 nm pixel size, were designed within 2hours per mask. The experimental results show expected advantages for Die-to-Die and Die-to-Database inspection compared with the system using 257nm inspection optics. Shorter wavelength effect makes transmission inspection sensitivity increase, and realizes 40nm size particle inspection. As for the phase shift mask, the difference of gray value between the area with phase defect and without phase defect was clear relatively. In this paper, specifications and design, experimental results are described.
This paper proposes a new approach to optical proximity correction (OPC) using an adjustable OPCed cell and genetic algorithms (GA) to achieve optimal OPC feature generation for the full-chip area at fast operational speeds. GA is an efficient optimization technique based on population genetics. In this new approach, an adjustable OPCed cell consists of two parts. The first part is the original design data. The second part consists of two kinds of OPC features. The first kind is referred to as "fixed features", which include OPC feature data from a conventional OPC technique. The second kind, named "adjustable features", are located in the peripheral regions of the cell and include adjustable OPC variables. As the values of these variables are greatly influenced by neighboring cell patterns, the variables are quickly optimized by the GA after chip layout. The effectiveness of this approach, in terms of reduced times for accurate simulations and repeated modification of OPCed features, is demonstrated through computational experiments.
Mask data preparation (MDP) for modern mask manufacturing becomes a complex process because many kinds of EB data formats are used in mask makers and EB data files continue to become bigger by the application of RET. Therefore we developed a unified mask pattern data format named "OASIS.VSB1" and a job deck format named "MALY2" for Variable-Shaped-Beam (VSB) EB writers. OASIS.VSB is the mask pattern data format based on OASISTM 3 (Open Artwork System Interchange Standard) released as a successive format to GDSII by SEMI. We defined restrictions on OASIS for VSB EB writers to input OASIS.VSB data directly to VSB EB writers just like the native EB data. OASIS.VSB specification and MALY specification have been disclosed to the public and will become a SEMI standard in the near future. We started to promote the spread activities of OASIS.VSB and MALY. For practical use of OASIS.VSB and MALY, we are discussing the infrastructure system of MDP processing using OASIS.VSB and MALY with mask makers, VSB EB makers, and device makers. We are also discussing the tools for the infrastructure system with EDA vendors. The infrastructure system will enable TAT, the man-hour, and the cost in MDP to be reduced. In this paper, we propose the plan of the infrastructure system of MDP processing using OASIS.VSB and MALY as an application of OASIS.VSB and MALY.
Since 2001, we have been improving the hp65nm generation photomask repairing systems, the SIR7000. FIB repair stains quartz substrate with Ga ions. We process the repaired area using two parameters: edge bias and over-etching depth to recover transmission loss. The simulation shows that smaller over-etching makes the lithography process window larger. The dependence of Ga density in quartz with on FIB acceleration voltages shows that the Ga-doped area is smaller according as acceleration voltage is lower. It is found that the over-etching depth should be below 15nm, and a new FIB repairing system should have a low acceleration column. In order to confirm the effect of low acceleration voltage, we investigated the transmittance and the over-etching depth as a feasibility study. As the result, lower acceleration voltage repair gives higher transmittance and lower over-etching depth. We confirmed that the FIB with low acceleration voltage is the most promising technology for the hp65nm generation photomask repairing.
An effective and practical control technology of critical dimensions for submicron VSLI is presented. An ARCOR (Anti-Reflective Coating On Resist) process was improved, which is applied as a transparent type anti-reflective coating. A water soluble and low refractive index film was developed for this purpose. The following five items were measured experimentally and discussed : (1) amplitude of swing curve's dependence on resist thickness, (2) thickness latitude of the ARCOR film, (3) photo speed, (4) CD variations in a submicron DRAM and (5) alignment accuracy with a bright field alignment system.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.