The 1st generation Laser-Produced Plasma source system "ETS" device for EUV lithography is under development. We
report latest status of the device which consists of the original concepts (1) CO2 laser driven Sn plasma, (2) Hybrid CO2
laser system that is combination of high speed (>100kHz) short pulse oscillator and industrial cw-CO2, (3) Magnetic
mitigation, and (4) Double pulse EUV plasma creation. Maximum burst on time power is 69W (100kHz, 0.7 mJ EUV
power @ intermediate focus), laser-EUV conversion efficiency is 2.3%, duty cycle is 20% at maximum. Continuous
operation time is so far up to 3 hours. Debris is efficiently suppressed by pre-pulse plasma formation and magnetic field
mitigation system. Long-term performance is now under investigation. Also future plan is updated.
We are developing a CO2 laser driven Tin plasma EUV source for HVM EUVL. This approach enables cost-effective EUV power scaling by high-conversion efficiency and full recovery of Tin fuel. The RF-excited, multi 10 kW average power pulsed CO2 laser system is a MOPA (master oscillator power amplifier) configuration and operates at 100 kHz with 20 ns pulse width. The EUV light source is scalable to in-band 200 W IF power with a single 20-kW CO2 laser beam. EUV chamber is kept uncontaminated by using a small size droplet target and effective Tin exhaust by magnetic plasma guiding. Characterization of the plasma flow in uniform magnetic field was studied by monitoring the motion of Tin plasma stream in a large vacuum chamber, depending on the magnetic flux up to 2 T. Topics relevant for HVM source is reported on continuous operation and Tin vapor evacuation.
ArF immersion technology is spotlighted as the enabling technology for below 45nm node. Recently, double exposure
technology is also considered for below 32nm node. We have already released an injection lock ArF excimer laser with
ultra-line narrowed and stabilized spectrum performance: GT61A (60W/6kHz/ 10mJ/0.35pm) to ArF immersion market
in Q4 2006. The requirements are: i) higher power ii) lower cost of downtime for higher throughput iii) greater
wavelength stability for improved overlay and iv) increased lifetimes for lower operation costs.
We have developed high power and high energy stability injection lock ArF excimer laser for double patterning: GT62A
(90W/6000Hz/15mJ/0.35pm) based on the technology of GT61A and the reliability of GigaTwin (GT) platform. A high
power operation of 90W is realized by development of high durability optical elements. Durability of the new optics is at
least 3 times as long as that of the conventional optics used in the GT61A. The energy stability is improved more than
1.5 times of performance in the GT61A by optimizing laser operational conditions of the power oscillator. This
improvement is accomplished by extracting potential efficiency of injection lock characteristic. The lifetime of power
oscillator, which is one of the major parts in cost of ownership, is maintained by using higher output of the power supply.
We previously succeeded in fabricating 60-nm line-and-space (L/S) patterns with fluorine-containing silsesquioxane-type (F-SSQ) resist, BARRIERTA® J25V immersion fluid, and NovecTM HFE-7200 rinse liquid using our two-beam interferometer. In the study reported here, we tried to fabricate a finer resist pattern with this immersion fluid, but 40-nm L/S could not be resolved because of the T-top shapes produced under the same conditions. The cause of the T-top shape was photo-acid generator (PAG) leaching into HFE-7200, which in effect caused the resist layer to swell. When FluorinertTM FC-84 with the CF3 functional group, which has the lowest reactivity, was used as a rinse liquid, the resolution of 40- and 32-nm L/S without T-top shape was achieved. Next, to fabricate finer patterns, we considered improving the molecular structure to raise the refractive index. As a result of an examination based on perfluoroalkane, which has high transparency, we found that it is effective to reduce the fluorine atom concentration, transform the molecular structure to a steric structure without reducing molar refractivity, and attach a functional group such as a cyclohexyl or chloro group. Finally, with the high-refractive index immersion fluid, we attempted to fabricate 28-nm L/S. Although we tried pattern fabrication with two immersion fluid candidates, transfer of the interference patterns to the resist has not been confirmed at this time. However, since we checked that the light did reach the resist, we speculate that it will be possible to fabricate 28-nm L/S by making a minor change.
Last year Gigaphoton introduced a 45-W ArF excimer laser, model GT40A, to semiconductor markets as a light source for 65 nm lithography generation. The GT40A is based on injection lock technology with G-electrode, magnetic bearing and high resolution technologies for high reliability and long lifetime. As a result, GT40A showed the stable performance during the chamber maintenance interval of over 15 billion pulses. In this paper we will report the longterm stability of GT40A.
A feasibility study of next generation 6 kHz ArF laser for lithography is presented. High repetition rate operation of excimer lasers faces two technical challenges: 1) the occurrence of acoustic waves caused by the discharge in the laser chamber and 2) the huge energy consumption of the large gas flow fans. This paper describes our approach to dampen the acoustic waves. A computer simulation of acoustic wave generation inside the discharge chamber was done. The simulation correlates well with Schlieren photography measurements that visualized the acoustic waves. Based on these results, a chamber for 6 kHz repetition rate was newly designed. Measured spectral data (FHWM and E95) proved that the acoustic wave perturbation was remarkably reduced. A very efficient design method for high repetition rate laser chamber has therefore been established.
A two-beam interference lithography system based on a line-selected F2 laser has been developed. Resist patterns with a 60nm line and space (L&S) resolution were produced by the interferometer by F2 immersion lithography. The F2 laser performance had been especially optimized for this application. The spectral emission at the 157.53nm line was less than 1% of the main line emission at 157.63nm. The main line had a deconvolved spectral bandwidth of 0.84 pm (full width at half maximum (FWHM)). The degree of horizontal linear polarization was above 0.73 and the visibility of spatial coherence was larger than 0.83 at a pinhole distance of 0.1mm.
We performed an initial evaluation of 157-nm immersion lithography. The 157-nm immersion fluid needs to have both a high refractive index and high transmittance at a wavelength of 157 nm. This paper focuses on the transparency of the fluid. We evaluated the transparency of straight-chain perfluoroalkane and perfluoroether using a semi-empirical molecular orbital method. We found that perfluoroether has lower absorption at 157 nm than perfluoroalkane, and increasing the amount of ether bonds in perfluoroether can further reduce the absorption. Moreover, we found that designing the molecular structure with ether bonds so that the number of successive CFx is balanced should further improve transparency. Although the commercial perfluoropolyether BARRIERTA® J25V contains a trifluoromethyl group in one of its side-chains, it satisfied the above conditions and achieved high transmittance of 1.0 cm-1 at 157 nm. The sensitivity characteristics of the XP2332C and F-SSQ resists were evaluated by dry and immersion exposure using BARRIERTA® J25V immersion fluid, and no noticeable changes were seen in the development contrast for either exposure condition for either of these two resists. To perform 157-nm immersion exposures, we constructed a Michelson interferometric exposure tool, which let us create an interference pattern with sufficient optical contrast. We obtained a resolution of 60-nm line-and-space pattern having a good rectangular shape by immersion exposure using this interferometric exposure tool, F-SSQ resist, and BARRIERTA® J25V immersion fluid without using a top-coat.
ArF-dry microlithography is currently switching from pre-production to mass-production and the target node is shifted from 90 nm to 65 nm. ArF-wet or F2 laser lithography will then be an important player for the next generation node below 45 nm. Therefore, high throughput and high-resolution exposure tools for VUV lithography require VUV light sources (ArF and F2 lasers) with high power and narrow bandwidth. In this paper, we describe the beam quality of the new- type injection lock (MOPO, master oscillator power oscillator) ArF laser system we developed and compare it with the beam quality of a master oscillator power amplifier (MOPA) ArF laser system. A high power and narrow bandwidth ArF laser can be achieved with twin laser chambers in a MOPA or an injection lock laser configuration. Compared to the MOPA system, the injection lock laser system has an excellent performance (e.g. high efficiency, long pulse duration and narrow spectrum). On the other hand, the injection lock system has some disadvantages in beam quality showing high spatial coherence, broadband emission and having a beam profile with a hole. These technical issues have been solved, however, with the following two new breakthrough-technologies: (1) a new-type injection lock system having low spatial coherence and a beam profile with no hole and (2) the optimization of the injection seed energy and discharge timing between the twin chambers for low broadband emission. The spatial coherence, the broadband spectrum and the beam profile of the new-type injection lock system were measured with a Young’s interferometer, a wide range spectrometer with etalons and a 2-dimensional beam profiler, respectively. The new-type injection lock ArF laser system had a lower spatial coherence than a conventional injection lock system, a very low broadband emission level thus preventing deterioration of exposure tools resolution, and a beam profile with no hole. Moreover, we reconfirmed that the new-type injection lock system has the same excellent performance as the conventional injection lock system.
Mass production in 193 nm lithography is now starting and its target node is moving from 90 nm to 65 nm. The main performance requirement of ArF excimer laser in this situation is high power with ultra narrow spectrum for higher throughput. The other hand, higher reliability and lower cost of ownership (CoO) are strongly hoped in mass production because CoO of ArF excimer laser is still higher than that of KrF excimer laser. We have already reported the 4 kHz ArF excimer laser for mass production, model G42A, which has an 20 W of average power, spectral bandwidth less than 0.3 pm (FWHM) and a spectral purity less than 0.75 pm (E95). We applied some technologies to G42A for achieving the high reliability and long lifetime. As a result, G42A showed the stable performance during the lifetime of over 10 billion pulses. In this paper, we report the long-term stability of G42A. And also, we introduce the reliability data of G40A series, which is the previous 4 kHz ArF excimer laser model.
New light source technology for ArF lithography under 65nm node is introduced. That is “GigaTwin” platform based on “Injection Lock” technology. The new product named GT40A is 60W (4000Hz, 15mJ), 0.18pm high power ultra narrowed ArF laser. The “Injection Lock” technology provides higher performance and lower CoO. GT40A has enabled the target of more than 60ns pulse duration by natural long pulse and optical pulse stretcher. Combination of “Injection Lock” technology and Gigaphoton’s key technologies; “Higher resolution” technology, “Magnetic bearing” technology and “G-electrode” technology promise durable and reliable performance of GT40A. These technologies enable the target of chamber maintenance interval more than 12 billion pulses. The GT40A will be release into market by 4Q 2004. We introduce latest development data of GT40A, which is developed new high power “Injection Lock” laser platform for VUV/DUV lithography system.
We have developed an ultra-line-narrowed, high-repetition-rate, high-power injection-locked F2 laser system for 157 nm dioptric projection systems under the ASET project “F2 Laser Lithography Development Project”. A spectral bandwidth of < 0.2 pm (FWHM), an output power of > 25 W, and an energy stability (3-sigma) of < 10 % at 5 kHz repetition rate was successfully obtained by using a low-power ultra-line-narrowed oscillator laser and a high-gain multi-pass amplifier laser. These parameters satisfy the requirements of exposure tools. A numerical simulation code that can simulate the spectral dynamics of the F2 laser under different operation modes such as free running operation, line-narrowed operation, and injection-locked operation, has also been developed. Using this simulation code, it is found that the instantaneous spectral bandwidth narrows monotonously during the laser pulse, and a narrower spectral output can be obtained by seeding the tail area of the line-narrowed F2 laser pulse. And the line-narrowing operation of the oscillator laser and the behavior of the injection-locked laser system can be predicted very precisely with this simulation code. The development of F2 laser for microlithography will be accelerated by this new simulation code.
193-nm lithography is going to move from pre-production phase to mass production phase and its target node become narrowing from 90 nm to 65 nm. In these situations, the laser manufacture needs to provide the high durable ArF excimer laser, which has superior spectrum performance. Gigaphoton has already introduced 4 kHz ArF laser (model G41A) to 193-nm lithography market, which produce 20 W and spectrum bandwidth of 0.35 pm (FWHM). G41A has showed high reliability and long lifetime over 5 billion pulses. In this paper, we report on the 4 kHz ArF excimer laser for mass production, model G42A, which has 20 W, spectral bandwidth less than 0.3 pm (FWHM) and a spectral purity less than 0.75 pm (E95).
The roadmap of semiconductor fabrication predicts that the semiconductor market will demand 65 nm node devices from 2004/2005. Therefore, an Ultra-Line-Narrowed F2 laser for dioptric projection systems is being developed under the ASET project 'The F2 Laser Lithography Development Project.' The target of this project is to achieve a F2 laser spectral bandwidth below 0.2 pm (FWHM) and an average power of 25W at a repetition rate of 5 kHz. Accurate measurements of the laser spectrum and of the laser wavelength stability are therefore very important. We therefore developed a VUV wavemeter with a Br-lamp to measure the absolute F2 laser wavelength. We obtained 157.631 nm for the main F2 laser transition using the Br-lamp reference lines at 157.4840 nm and 157.6385 nm. We have also developed a VUV high-resolution spectrometer to measure spectral profiles, which was calibrated by 157 nm coherent light source (157CLS). The 157CLS is a very narrow line-width, which can be approximated by delta function. The 157CLS had a line-width of 0.008 pm (Full-Width-At-Half- Maximum, FWHM) and a power of 0.1 mW. The instrument function of the high-resolution spectrometer measured by the 157CLS was 0.10 pm (FWHM). As a result, the deconvolved FWHM of the ultra-line narrowed F2 laser is 0.12 pm, the deconvolved spectral purity containing 95% of the total energy (E95) was less than 0.45 pm.
The 157nm molecular fluorine laser is regarded as the next generation light source for semiconductor exposure technology in the vacuum ultraviolet (VUV) region. Research for high performance F2 laser optical materials is therefore indispensable. In this paper, we describe methods and results of evaluating optical materials used in the 157nm region. In order to evaluate F2 laser optical materials, we have developed in-situ system, which measures the real-time transmittance at 157nm during laser irradiation and the transmittance in the vacuum ultraviolet (VUV) region directly after laser irradiation to avoid airborne contamination. The system is purged with high purity nitrogen gas during irradiation to reduce laser light absorption and to keep contamination at a minimum. Due to F2 laser irradiation cleaning, the transmittance of uncoated calcium fluoride (CaF2) samples initially rapidly then gradually increased during 50 million pulses (Mpls). Thereafter the transmittance remained constant. In addition, durability test results of CaF2 substrates and coatings are also presented. Especially coating quality varied enormously between suppliers.
Deep UV lithography using ArF excimer laser requires very narrower spectral properties. However, spectrometers that have sufficient resolution to evaluate the ArF excimer laser are commercially not available. High-resolution multi-grating spectrometers for measuring spectral bandwidth at full width at half maximum (FWHM) and spectral purity of ArF excimer lasers are introduced. To achieve high resolution, a special grating arrangement called HEXA (Holographic and Echelle Gratings Expander Arrangement) is designed. A holographic grating and an echelle grating are used so that the input light is expanded and diffracted several times. The resolution of the HEXA spectrometer is more than two million. To evaluate the resolution and the stability of the spectrometer, we measured the instrument function by a coherent light source whose wavelength is same as ArF excimer laser. The experimentally obtained resolution of the spectrometer is 0.09pm or 0.05pm that is selectable. The measured dispersion has a good agreement with the theoretical value. To evaluate the spectral properties of excimer lasers, the instrument function must be very stable. This high-resolution spectrometer enables high quality control of line-narrowed ArF excimer laser mass production.
The 157 nm molecular fluorine laser is regarded as the next generation light source for semiconductor exposure technology in the vacuum ultraviolet (VUV) region. Research for high performance F2 laser optical materials is therefore indispensable. In this paper, we describe methods and results of evaluating optical materials used in the 157 nm region. We have developed an in-situ VUV evaluation system, which can measure the transmittance in the deep ultraviolet (DUV) and the VUV region directly after laser irradiation and the temporal transmittance during 157 nm-laser irradiation without airborne contamination. The system consists of a 2 kHz F2 laser, an in-situ VUV irradiation system and a specialized VUV spectrophotometer. Laser irradiation and measurements were carried out under high purity nitrogen gas. During the first phase of F2 laser irradiation (0 approximately 0.7 million pulses), a rapid transmittance increase (87% yields 89%) of calcium fluoride (CaF2) substrates was observed and this change took almost place within one minute after starting the irradiation. It is assumed that this effect is due to surface cleaning by the F2 laser beam. Surface polishing has been excluded because the sample surface roughness measured with an atomic force microscope (AFM) showed no difference before and after irradiation. After an irradiation of 0.1 million pulses, the fast initial increase of the transmittance slowed down and finally reached about 89%. The slower increase might be correlated with a reduced chemical bonding of hydroxyl groups on the surface, because the transmittance change at 157 nm was in good agreement with the measured VUV transmittance below 170 nm. This is corresponds with the hydroxyl absorption band below 170 nm. The transmittance and reflectance of high reflection coated substrates were examined as well. Obvious damage and a huge reflectivity loss (82.4% yields 47.4%) were observed after 1.5 billion irradiation pulses. The information obtained during this work is very useful in devising optical F2 laser components.
F2 lasers are the light source of choice for microlithographic tools enabling structures below the 70 nm technology node. Accurate measurements of the spectrum of F2 lasers are therefore very important. We have succeeded in measuring the spectrum of an ultra line narrowed F2 laser using a VUV grating spectrometer calibrated with a 153 nm coherent light source (153CLS). As a first step in the development of a 157 nm coherent light source (157CLS), the less complex 153CLS has been built. Using resonant two-photon processes and four-wave mixing in Xe, this method provided a tunable laser system with high conversion efficiency and a very narrow linewidth, which can be approximated by a (delta) function. The 153CLS included a pulsed, single-mode tunable Ti:sapphire laser (768.0 nm), a third harmonic generation unit (256.0 nm) and an Xe gas cell. The 153CLS had a linewidth of 0.007pm (FWHM) and a power of 0.05mW at 1000 Hz. The VUV grating spectrometer and a Michelson interferometer for F2 lasers have also been developed. The instrument function of the spectrometer has been measured with the 153CLS. Experimental and theoretical instrument functions were in good agreement (FWHM: 0.30pm). The instrument function at 157 nm was therefore estimated to have the theoretical FWHM of 0.31 pm. The spectral linewidth of the line-selected F2 laser has been measured under various laser conditions with the spectrometer as well as with the interferometer. Results show good agreement between both measurements. The spectrum of the ultra line narrowed F2 laser was measured with the VUV grating spectrometer calibrated using the 153CLS. The laser's FWHM of the deconvolved spectrum was 0.29pm. The deconvolved spectral purity containing 95% of the total laser energy is less than 0.84pm.
ArF excimer lasers are the light source of choice for the next generation of micro-lithographic tools enabling structures below the 130nm technology node. For these lithographic mass production lines Komatsu successfully developed an ArF excimer laser, named G20A, which has a 2kHz pulse repetition rate, 10W average power and 0.5pm (FWHM) spectral bandwidth. G20A has three significantly improved important items: (1) the high resolution line narrowing module, (2) the high power and high repetition rate solid state pulse power module, and (3) the Xe added laser gas yielding an improved overall laser performance. ArF laser spectra were determined with out newly developed high-resolution spectrometer. The instrument function of the spectrometer was measured with a 193nm coherent light source jointly developed with the University of Tokyo. The laser gas composition is one key parameter of excimer laser performance. The deteriorating effect of impurities on ArF performance is e.g. ten times larger than on KrF performance. We observed that added Xe gas, however, has a beneficial effect on the pulse energy and the energy stability at high repetition rates. Experimental results of a currently developed 4 kHz ArF laser are also reported.
The F2 Laser (wavelength 157nm) is becoming the most promising candidate of light source for next generation optical micro-lithography below the 100nm-technology node. We have developed VUV optics evaluation system, which is able to measure the transmittance between DUV and VUV region right after laser irradiation and the temporal transmittance during 157nm-laser irradiation. This system structured by Ni-plated Aluminum and stainless steel. The inside of chamber is purged of any laser light absorption gas away with high purity nitrogen gas during the irradiation. Using this system, we can measure the characteristics of the irradiated sample without exposing to the air of other contamination sources. So this system has +/- 0.5% accuracy result in repeated measurement. In the in-situ transmittance measure system, the transmittance can be monitored during F2 laser irradiation. And we evaluated characteristics of VUV optical materials in the early period of F2 laser irradiation by this in-situ transmittance measure system.
We have succeeded in the commercialization of the world's first kHz ArF excimer laser for microlithography application. The ArF laser is expected to be the light source for the DUV lithography tools for sub-0.13 micron geometry semiconductor production. In this paper, we present the performance and advanced technologies of the newest model of the ArF excimer laser, which achieves 10W of output power with 0.5 pm bandwidth at 2 kHz. The pulse-to-pulse energy stability, 3 sigma is less than 10 percent and integrated energy stability is within +/- 0.3 percent. The durability performance is extended to 5 billion pulses, which provides affordable CoO for volume production.
The fluorine molecular laser is a very promising light source for the next generation of optical microlithography below 100 nm. The fluorine laser we developed uses a new, all solid-state pulse power module, that generates an output energy of 6 J/pulse, and an optimized RF pre-ionization. At 2000Hz, 11 mJ/pulse have been measured. Single line oscillation at 157.6299nm was obtained using prisms. Fluorine laser spectra have been measured with a high- resolution VUV spectrometer. The convoluted bandwidth was 1.08pm for 0.1 percent /balance F2/He and a total pressure of 3000 hPa. Currently, we are investigating Ultra Narrow fluorine lasers with a bandwidth below 0.2pm. This laser is aimed for exposure tools using refractive projection optics at 157nm. Evaluation tools for optical materials and coatings have also been developed. The temporal transmittance during 157 nm laser irradiation and the transmittance between the DUV and VUV region directly after laser irradiation can be measured. We have successfully demonstrated the potential of the molecular fluorine laser for microlithography and a first generation laser for 157 nm exposure tools is almost ready.
The design of high-resolution multi-grating spectrometers for measuring the spectral line width at full width at half maximum and the purity of KrF/ArF excimer lasers is outlined. A special configuration of gratings called DEGA is described in detail. DEGA uses two identical echelle gratings with identical angles of incidence. The focal lengths of the imaging mirrors are 1.8m. The output slit image is magnified five times and detected by a back illumination CCD detector array having a very high DUV sensitivity. The theoretical dispersion of the DEGA spectrometer is 1.2pm/mm. The experimentally measured dispersion of 1.2pm/mm is in good agreement with the theoretical value. The measured resolution is 0.11 pm at the KrF excimer laser wavelength. The long-term stability of DEGA has been evaluated and proven to be sufficiently high to use the spectrometer for high quality KrF/ArF excimer laser production.
We have succeeded in the development of the ArF excimer laser with high performance and durability, by researching and developing of the spectral measurement and gas control technologies, laser chamber with radio frequency preionizer, the high repetition rate solid state pulse power module and the optimized highly durable optical module. As regards spectral measurement technologies, the true instrumental function of a monitor etalon have been measured by our developed 193nm coherent light source. Spectrum of ArF laser could be obtained precisely by deconvolution performed using the covolved spectrum of the ArF laser and the measured instrumental function of the monitor etalon. As for gas control technologies, the influence of impurities given to the ArF laser performance was bigger about 5-20 times compared with the KrF one. And we have paid attention that low concentration Xe gas has effect to the triple output energy. The durability test of 2 billion pulses has been done for the first time in the world. The developed ArF laser kept the integrated energy stability less than +/- 0.6 percent and spectral band-width of FWHM less than 0.8 pm. The result showed, developed laser has an enough performance for lithography even after the pulse number exceeds 2 billion pulses.
In the semiconductor industry, it is one of the most important issues to reduce manufacturing cost of the semiconductor device by increasing throughput. We have succeeded in the development of the high repetition rate excimer laser technology, and obtained the prospect of low CoO of the laser device. In this paper, we present the performance and advanced technologies of the newest model of the KrF excimer laser for microlithography; KLES-G20K. The laser achieves 20 W of output power with 0.6 pm bandwidth at 2 kHz. The pulse to pulse energy stability, 3 sigma is less than 6 percent and integrated energy stability is within +/- 0.4 percent. By our estimation, more than 50 percent of CoO of the laser device is cut by adopting developed machine compared to a present one.
We present the result of billion level durability test in the newest model of ArF excimer laser, KLES-G5A, for microlithography and durability issues relate to optical damage. The developed ArF laser achieves 5 W of output power with integrated energy stability less than +/- 0.3 percent at 1 kHz repetition rate. The spectral characteristic by FWHM of the deconvolved spectrum is less than 0.7 pm and the 95 percent energy of the total energy is within 2.0 pm band, which is designed to be suitable for partially achromatized refractive projection optics. Durability test of 1 billion pulses has already finished, and we have observed very slight changes in the performance. Prior to the durability test, irradiation examinations have been done. It demonstrates that CaF2 material has superior stability to SiO2 even as the high fluence DUV optical parts of line-narrowed ArF laser.
We present the performance and durability of the newest model of the KrF excimer laser for microlithography KLES-G10K. The laser achieves 10 W of output power with 0.7 pm bandwidth at 1000 Hz with newly developed solid state pulsed power module and the high precise narrowing module. The durability of laser tube achieves 5 billion pulses with the new radio frequency preionization scheme, which reduces consumption of fluorine gas and maintenance of laser tube drastically.
New KrF excimer laser for microlithography KLES-G7 with a new simple solid state pulsed power circuit (SPC) is developed. This SPC has several advantages such as less maintenance cost and the higher reliability. The laser realizes 7.5W with 0.8 bandwidth, 600 Hz, 10mJ. The performance and the stability of the laser is demonstrated. The maintenance interval of the SPC is more than 10 X 109 pulse. The KLES-G7 reduces 20 percent of the photon cost compared with the old model. It will accelerate the mass production of after 64Mbit DRAM.
A feasibility study of ArF excimer laser as a light source for subquarter micron design rule lithography is presented. Partially narrowed KLES-G1A ArF laser produces 57-pm (FWHM) bandwidth pulses with an average power of 5.1 W. Narrow-band operated KLES-G1A generated 7.2- pm (FWHM) pulses with 1.4 W. Further high output power with narrow-band spectrum was achieved by using injection-locking technique. The injection-locked ArF laser system generated 0.8-pm (FWHM) bandwidth pulses with an average power of 250 W. We also point out some problems appeared in the laser operation.
In this paper we describe the performance of the newest model of line-narrowed KrF excimer laser KLES-G6 (1995 model) developed in factory on the practical requirements. The KLES- G6 exhibits: (1) spectral bandwidth < 0.8 pm; (2) wavelength stability < +/- 0.1 pm; (3) pulse-to-pulse energy stability < 1.8% ((sigma) ); (4) output power equals 6 W at 600 Hz; (5) gas life > 100 million pulses or 7 days; (6) window cleaning or exchange > 1 billion pulses; (7) laser chamber exchange > 2 billion pulses; (8) mean time between failures > 1500 hours; (9) running cost per a billion pulses is about 29 thousand dollars. These advanced performances will save the running cost and guarantee the high uptime ratio needed to satisfy the plant's practical requirements.
The stable performance of the line-narrowed Krypton Fluoride Excimer Laser for production steppers, the KLES-G6, in real stepper mode operation is presented. Wavelength stability of < +/- 0.1 pm and pulse-to-pulse energy stability of < 2% ((sigma) ) were achieved in the real stepper mode operation. Further the durability test was made at 6 W(10 mJ, 600 Hz) in 1 sec. ON - 1 sec. OFF (50%) burst mode and in cw mode. The central wavelength stability < +/- 0.2 pm including the drift at the head of burst, spectral bandwidth < 1.5 pm, and pulse-to-pulse energy stability < 2.5% ((sigma) ) over 1.6 X 109 shots were achieved. The KLES-G6 will assist us to utilize the excimer stepper in real commercial production successfully.
A narrow band KrF excimer laser system for lithography has been developed. Its durability has been proved up to 2 billion shots that correspond to one year operation in mass production line. The system has kept the average power of 6W with the power stability within +- 3% and the spectral line-width 1.2 pm (FWHM) with the wavelength stability within +- 0.2 pm. The integration of the spectrum has indicated that 95% of the spectral energy lay inside 4.6 pm band during 2 billion shots
The conventional line-narrowing methods employed by narrow-band KrF excimer lasers are (1) intracavity etalons and (2) a Littrow grating with beam expansion. They have the following problems in high average power operation: (a) short lifetime of the etalons and large wavelength drift and large line-width change (the etalons method), or (b) low output power and short lifetime of electrodes (the grating method). To solve there problems, a hybrid method consisting of two prism beam expanders, an etalon and a Littrow grating, it proposed. These prism beam expanders decrease the light intensity on the etalon, so that the lifetime of the etalon is increased drastically, the passive wavelength drift is minimized, and the wavelength is adjusted quickly. By employing this system, average power of more than 8 W, line-width of less than 2.5 pm(FWHM), and long-term wavelength stability of less than +-0.5 pm were achieved.
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