Plasmons in graphene are known to be tunable and to exhibit extreme field confinement, making them useful for optoelectronic devices, and for exploring extreme light matter interactions. Thus far, these effects have been demonstrated at Thz to mid-IR frequencies, with the upper frequency limit set by limits of electron beam lithography, which can make graphene nanostructures as small as 15nm. In this talk, I will show that bottom-up block co-polymer lithography methods can create nanostructures with characteristic lengthscales as small as 12nm, and that in this regime the non-local interactions in graphene become strong, creating a significant blue shift of the plasmonic resonances. This allows for the creation of plasmonic cavities with resonances at wavelengths as short as 2.2um. The confinement factors of these cavities reach 135, which is exceedingly large, but less than what has been predicted by theory.
Patterning graphene into nanostructures enables the coupling of free space radiation to plasmons in graphene. These plasmons are highly tunable and have been used in such applications as tunable filters and chemical sensors in the THz and mid-infrared ranges, with graphene structures with characteristic dimensions of 15 nm of greater. Here, we will demonstrate that block copolymer based fabrication can create sub 15 nm plasmonically active graphene nanostructures in a scalable, efficient, and repeatable manner. Furthermore, we will report the first measurement of a near-infrared graphene plasmon resonance and discuss some implications for next-generation optoelectrical devices.
We report a facile route to form densely packed graphene nanoribbon (GNR) arrays via graphoepitaxial assembly of symmetric P(S-b-MMA). Since guiding channels for graphoepitaxy are the source and drain electrodes in field effect transistor (FET) geometry, we avoid laborious nanopatterning and FET device fabrication processes. By grafting a random copolymer brush on the graphene FET device, perpendicular lamellar domains are aligned normal to the electrode direction, resulting in line arrays connecting the two electrodes. Through optimization of the reactive ion etching conditions, the vertically oriented lamellar domains were transferred to the underlying graphene, leading to GNR arrays that act as conducting channels. This is a simple and efficient fabrication process using the fundamental concepts developed for the graphoepitaxial assembly of symmetric BCPs to create densely packed sub- 20 nm GNR arrays, compared to conventional fabrication process.
In this proceeding, transient 2D IR spectroscopy is used to study Re dye sensitized TiO2 nanocrystalline thin films.
Multiple conformations of the dye on the interfaces are found by equilibrium 2D IR spectrum and transient 2D IR
spectrum indicates these different binding conformations have different electron transfer kinetics.
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