Mr. Paul Petric Profile

Paul Petric

Engineering Director

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Publications (7)

Proceedings Article | 28 March 2014 Paper

The REBL DPG: recent innovations and remaining challenges

Allen Carroll, Luca Grella, Kirk Murray, Mark McCord, Paul Petric, William Tong, Christopher Bevis, Shy-Jay Lin, Tsung-Hsin Yu, Tze-Chiang Huang, T. Wang, Wen-Chuan Wang, J. Shin

Proceedings Volume 9049, 904917 (2014) https://doi.org/10.1117/12.2048528

KEYWORDS: Mirrors, Lithography, Semiconducting wafers, Error control coding, Reflectivity, Switching, Electrodes, Data compression, Printing, Electron beam lithography

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SPIE Journal Paper | 5 August 2013 Open Access

Digital pattern generator: an electron-optical MEMS for massively parallel reflective electron beam lithography

Luca Grella, Allen Carroll, Kirk Murray, Mark McCord, William Tong, Alan Brodie, Thomas Gubiotti, Fuge Sun, Francoise Kidwingira, Shinichi Kojima, Paul Petric, Christopher Bevis, Bart Vereecke, Luc Haspeslagh, Anil Mane, Jeffrey Elam

JM3, Vol. 12, Issue 03, 031107, (August 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.3.031107

KEYWORDS: Electrodes, Mirrors, Microelectromechanical systems, Semiconducting wafers, Tin, Electron beam lithography, Metals, Aluminum, Coating, Reflectivity

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Proceedings Article | 8 November 2012 Paper

Reflective electron-beam lithography performance for the 10nm logic node

Regina Freed, Thomas Gubiotti, Jeff Sun, Anthony Cheung, Jason Yang, Mark McCord, Paul Petric, Allen Carroll, Upendra Ummethala, Layton Hale, John Hench, Shinichi Kojima, Walter Mieher, Chris Bevis

Proceedings Volume 8522, 85221J (2012) https://doi.org/10.1117/12.964978

KEYWORDS: Electron beam lithography, Lithography, Semiconducting wafers, Reflectivity, Logic, YAG lasers, Direct write lithography, Wafer-level optics, Computer aided design, Electron beams

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Proceedings Article | 21 March 2012 Paper

REBL: design progress toward 16 nm half-pitch maskless projection electron beam lithography

Mark McCord, Paul Petric, Upendra Ummethala, Allen Carroll, Shinichi Kojima, Luca Grella, Sameet Shriyan, Charles Rettner, Chris Bevis

Proceedings Volume 8323, 832311 (2012) https://doi.org/10.1117/12.919744

KEYWORDS: Semiconducting wafers, Electron beam lithography, Wafer-level optics, Lithography, Metrology, Integrated optics, Electron beams, Reflectivity, Silicon, Modulation

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Proceedings Article | 4 April 2011 Paper

Demonstration of lithography patterns using reflective e-beam direct write

Regina Freed, Jeff Sun, Alan Brodie, Paul Petric, Mark McCord, Kurt Ronse, Luc Haspeslagh, Bart Vereecke

Proceedings Volume 7970, 79701T (2011) https://doi.org/10.1117/12.879454

KEYWORDS: Electron beam lithography, Semiconducting wafers, Lithography, Electrodes, Mirrors, Microelectromechanical systems, Etching, Reflectivity, Electron beams, Tin

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Traditionally, e-beam direct write lithography has been too slow for most lithography applications. E-beam direct write lithography has been used for mask writing rather than wafer processing since the maximum blur requirements limit column beam current - which drives e-beam throughput. To print small features and a fine pitch with an e-beam tool requires a sacrifice in processing time unless one significantly increases the total number of beams on a single writing tool. Because of the uncertainty with regards to the optical lithography roadmap beyond the 22 nm technology node, the semiconductor equipment industry is in the process of designing and testing e-beam lithography tools with the potential for high volume wafer processing. For this work, we report on the development and current status of a new maskless, direct write e-beam lithography tool which has the potential for high volume lithography at and below the 22 nm technology node. A Reflective Electron Beam Lithography (REBL) tool is being developed for high throughput electron beam direct write maskless lithography. The system is targeting critical patterning steps at the 22 nm node and beyond at a capital cost equivalent to conventional lithography. Reflective Electron Beam Lithography incorporates a number of novel technologies to generate and expose lithographic patterns with a throughput and footprint comparable to current 193 nm immersion lithography systems. A patented, reflective electron optic or Digital Pattern Generator (DPG) enables the unique approach. The Digital Pattern Generator is a CMOS ASIC chip with an array of small, independently controllable lens elements (lenslets), which act as an array of electron mirrors. In this way, the REBL system is capable of generating the pattern to be written using massively parallel exposure by ~1 million beams at extremely high data rates (~ 1Tbps). A rotary stage concept using a rotating platen carrying multiple wafers optimizes the writing strategy of the DPG to achieve the capability of high throughput for sparse pattern wafer levels. The lens elements on the DPG are fabricated at IMEC (Leuven, Belgium) under IMEC's CMORE program. The CMOS fabricated DPG contains ~ 1,000,000 lens elements, allowing for 1,000,000 individually controllable beamlets. A single lens element consists of 5 electrodes, each of which can be set at controlled voltage levels to either absorb or reflect the electron beam. A system using a linear movable stage and the DPG integrated into the electron optics module was used to expose patterns on device representative wafers. Results of these exposure tests are discussed.

Proceedings Article | 4 April 2011 Paper

New advances with REBL for maskless high-throughput EBDW lithography

Paul Petric, Chris Bevis, Mark McCord, Allen Carroll, Alan Brodie, Upendra Ummethala, Luca Grella, Anthony Cheung, Regina Freed

Proceedings Volume 7970, 797018 (2011) https://doi.org/10.1117/12.882636

KEYWORDS: Semiconducting wafers, Mirrors, Reflectivity, Microelectromechanical systems, Magnetism, Photography, Electron beam lithography, Wafer-level optics, YAG lasers, Lithography

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Proceedings Article | 18 March 2009 Open Access

REBL nanowriter: Reflective Electron Beam Lithography

Paul Petric, Chris Bevis, Alan Brodie, Allen Carroll, Anthony Cheung, Luca Grella, Mark McCord, Henry Percy, Keith Standiford, Marek Zywno

Proceedings Volume 7271, 727107 (2009) https://doi.org/10.1117/12.817319

KEYWORDS: Semiconducting wafers, Electron beam lithography, Lithography, Electron beams, Reflectivity, Wafer-level optics, Prisms, Calibration, Electrodes, Mirrors

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