In this paper, effect of two-dimensional photonic pattern on the properties of the GaAs/AlGaAs based light emitting
diode (LED) is demonstrated. The interference lithography was employed to surface patterning of the GaAs/AlGaAs
based LED. The active region of the LED includes a GaAs/AlGaAs triple quantum well emitting at 850 nm. Interference
lithography was used for preparation of two-dimensional pattern in the upper diode layer. The prepared LED with two-dimensional
patterned photonic crystal structure was then investigated by electrical and optical measurements. Prepared
photonic crystal LED shows enhanced light extraction efficiency due to the more effective extraction of guiding modes,
what was documented from finite difference time domain simulations as well as from L(I) measurements.
We have measured the dependence of transfer function of endlessly single mode photonic crystal fiber on the bends
radius. The results are confirmed by numerical simulations. New questions on bending insensitivity of the Photonic
Crystal Fibers and effective refractive index approximation of the Photonic Crystal Fiber arise as result.
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