The InAs/InAsSb nBn structure detector without Ga (GA-free) has fewer internal defects, and the barrier blocks majority carrier while allowing the normal transport of photogenerated carriers. The unique structure can effectively suppress the generation-composite current generated by SRH, and achieve low dark current at high operating temperature. In this paper, a mid-infrared Ga-free nBn T2SL detector is investigated. The device exhibited 7.43x10-6 A/cm2 under 0.5 V bias at 127 K. At 120K, the detector achieves quantum efficiency values of 56%, exhibits excellent photoelectric performance.
The interfacial asymmetry and compositional disorder caused by atomic segregation and exchange significantly affect the electrical properties of the InAs/InAsSb superlattice, leading to deviations from original designs. The study presents a quantitative analysis of the compositional asymmetry of the superlattice and its effects using a segregation model and 8-band k.p model. The composition disorder at each interface, primarily induced by Sb segregation, is examined through the reconstruction of the actual atomic sequence structure based on scanning tunneling microscopy results. Three different atomistic structures of the superlattice are modeled using the k.p method, including the ideal MBE-growth structure, a rebuilt structure with Sb segregation only at the InAs-on-InAsSb interface, and a rebuilt structure with Sb segregation at both interfaces. The results of the modeling highlight the significant influence of Sb segregation on the electronic properties of InAs/InAsSb superlattices.
Sb segregation is the main contributor to the interfacial asymmetry of the InAs/GaSb superlattices. We reconstructed and quantified the Sb segregation profile in the InAs/Ga(In)Sb superlattice by a one-dimensional model using the postprocessing technique on cross-sectional STM images. The model shows a totally different profile between InAs-on-Ga(In)Sb interface and Ga(In)Sb-on-InAs interface. The asymmetric compositional profile is then added to the 8-band k.p model to investigate its effects on the band structures of the superlattice. With the Sb segregation, the effective band gap of the InAs/GaSb superlattice shifts towards a shorter wavelength. We hope that our work would provide a way to accurately predict the band structures of the InAs/GaSb superlattices by considering the nonideal interfaces.
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