Dr. Quiesup Kim Profile

Dr. Quiesup Kim

Member of Technical Staff at Jet Propulsion Lab

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Publications (8)

Proceedings Article | 18 June 2002 Paper

Space qualification of photonic devices

Quiesup Kim, Christopher Wrigley, Thomas Cunningham, Bedabrata Pain

Proceedings Volume 4640, (2002) https://doi.org/10.1117/12.433275

KEYWORDS: Manufacturing, Reliability, Photonic devices, Space operations, Failure analysis, Optoelectronic devices, Standards development, Semiconductor lasers, Optoelectronics, Field effect transistors

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Proceedings Article | 15 May 2001 Paper

Two-dimensional active pixel InGaAs focal plane arrays

Quiesup Kim, Michael Lange, Christopher Wrigley, Thomas Cunningham, Bedabrata Pain

Proceedings Volume 4277, (2001) https://doi.org/10.1117/12.426798

KEYWORDS: Sensors, Indium gallium arsenide, Field effect transistors, Staring arrays, Silicon, Switching, Active sensors, Infrared sensors, PIN photodiodes, Imaging systems

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Proceedings Article | 19 April 2000 Paper

Modulation transfer function of active pixel focal plane arrays

Quiesup Kim, Guang Yang, Christopher Wrigley, Thomas Cunningham, Bedabrata Pain

Proceedings Volume 3950, (2000) https://doi.org/10.1117/12.382175

KEYWORDS: Modulation transfer functions, Sensors, Staring arrays, Imaging systems, Active sensors, Spatial frequencies, Stars, Analytical research, Computing systems, Laser scanners

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Proceedings Article | 30 April 1999 Paper

Characteristics of monolithically integrated InGaAs active pixel imager array

Quiesup Kim, Thomas Cunningham, Bedabrata Pain, Michael Lange, Gregory Olsen

Proceedings Volume 3631, (1999) https://doi.org/10.1117/12.348303

KEYWORDS: Sensors, Indium gallium arsenide, Field effect transistors, Switching, Imaging systems, Active sensors, Silicon, Optical lithography, PIN photodiodes, Staring arrays

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Proceedings Article | 22 December 1997 Paper

Readout characteristics of integrated monolithic InGaAs active pixel sensor array

Quiesup Kim, Thomas Cunningham, Bedabrata Pain, Michael Lange, Gregory Olsen

Proceedings Volume 3290, (1997) https://doi.org/10.1117/12.298251

KEYWORDS: Sensors, Field effect transistors, Indium gallium arsenide, Capacitance, Photodiodes, Transistors, Active sensors, Amplifiers, Staring arrays, Diodes

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A newly fabricated monolithic InGaAs active pixel image sensor is presented, and its readout characteristics are described. The sensor is fabricated from InGaAs epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for signal buffering, selection and reset. The monolithic sensor eliminates the need for hybridization with a silicon multiplexer, and in addition, allows the sensor to be front illuminated, making it sensitive to visible as well as IR radiation. With further development, the sensor is ideal for dual band (visible/IR) applications, including optical communication. It is also well suited to applications requiring near room temperature, broad band response such as for atmospheric gas sensing and target identification. Two different types of small 4 by 1 test arrays have been fabricated. One is a source follower per detector architecture. Here the signal charge is integrated on the photodiode capacitance. The photodiode is connected to a gate of a JFET configured as a source-follower, which buffers the photodiode voltage. The other test circuit uses a capacitive transimpedance amplifier. This circuit contains an invertor using an input JFET with a passive JFET load. The photodiode is connected to the JFET gate. A feedback capacitor causes the circuit to act as an integrator, while keeping the diode input bias relatively constant. Both circuits also contain JFET switches for reset and selection. Selection connects the output of the chosen cell onto a common output bus. In this exploratory development effort, the effectiveness of these two different readout circuits will be discussed in terms of leakage, operating frequency, and temperature. These results then will guide for the second phase demonstration of integrated two dimensional monolithic active pixel sensor arrays for application in transportable shipboard surveillance, night vision and emission spectroscopy.

Proceedings Article | 22 January 1997 Paper

Monolithic InGaAs JFET active-pixel tunable image sensor (MAPTIS)

Quiesup Kim, Thomas Cunningham, Eric Fossum

Proceedings Volume 3006, (1997) https://doi.org/10.1117/12.264216

KEYWORDS: Sensors, Indium gallium arsenide, Image sensors, Transistors, Charge-coupled devices, Infrared radiation, Field effect transistors, Imaging systems, Switches, Infrared sensors

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Proceedings Article | 23 June 1994 Paper

Functional variation of dual gate MOS-JFET CCD test structure

Quiesup Kim, M. Zakharia

Proceedings Volume 2226, (1994) https://doi.org/10.1117/12.178488

KEYWORDS: Charge-coupled devices, Laser scanners, Helium neon lasers, Microelectronics, Sensor performance

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Proceedings Article | 1 May 1994 Paper

Progress in CMOS active pixel image sensors

Sunetra Mendis, Sabrina Kemeny, Russell Gee, Bedabrata Pain, Quiesup Kim, Eric Fossum

Proceedings Volume 2172, (1994) https://doi.org/10.1117/12.172769

KEYWORDS: Silicon, Image sensors, Information operations, Capacitors, Transistors, Interference (communication), Photodiodes, Sensors, Stereolithography, Diffusion

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Showing 5 of 8 publications

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