Mr. Robert Boone Profile

Robert Boone

Manager, Machine Learning at ASML

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Publications (10)

Proceedings Article | 23 March 2020 Presentation + Paper

Machine learning techniques for OPC improvement at the sub-5 nm node

Changsoo Kim, Seungjong Lee, Sangwoo Park, No-Young Chung, Jungmin Kim, Narae Bang, Sanghwa Lee, SooRyong Lee, Robert Boone, Pengcheng Li, Jiyoon Chang, Xinxin Zhou, YoungMi Kim, MinSu Oh, Minsung Kim, Rachit Gupta, Jun Ye, Stanislas Baron

Proceedings Volume 11323, 1132317 (2020) https://doi.org/10.1117/12.2551841

KEYWORDS: Data modeling, Optical proximity correction, Performance modeling, Neural networks, Image processing, Machine learning, Lithography, Extreme ultraviolet, Photoresist processing, Statistical modeling

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Proceedings Article | 14 March 2006 Paper

Reticle enhancement verification for the 65nm and 45nm nodes

Kevin Lucas, Kyle Patterson, Robert Boone, Corinne Miramond, Amandine Borjon, Jerome Belledent, Olivier Toublan, Jorge Entradas, Yorick Trouiller

Proceedings Volume 6156, 61560R (2006) https://doi.org/10.1117/12.658823

KEYWORDS: Resolution enhancement technologies, Optical proximity correction, Process modeling, Error analysis, Image processing, Semiconducting wafers, Reticles, Optical lithography, Photomasks, Model-based design

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Proceedings Article | 5 November 2005 Paper

Evaluation of transparent etch stop layer phase shift mask patterning and comparison with the single trench undercut approach

Y. Rody, P. Martin, C. Couderc, P. Sixt, C. Gardin, K. Lucas, K. Patterson, C. Miramond-Collet, J. Belledent, R. Boone, A. Borjon, Y. Trouiller

Proceedings Volume 5992, 59920R (2005) https://doi.org/10.1117/12.632561

KEYWORDS: Etching, Optical lithography, Photomasks, Quartz, Phase shifts, Printing, Electroluminescence, Manufacturing, Chromium, Optical proximity correction

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Despite the complexity of AAPSM patterning using the complementary PSM approach with respect to OPC correction, mask making, fab logistics etc, the technique still remains a valuable solution for special products where a low CD dispersion printing process is required. For current and next generation process technologies (90-65nm ground rules), the most common alternating mask solution of single trench etch with or without undercut becomes more difficult to manufacture. Especially challenging is the aspect ratio control of quartz etched trenches as a function of density in order to assure the correct phase angle and sidewall for dense and isolated structures over all phase shifted geometries. In order to solve this problem, a modified mask architecture is proposed, called the Transparent Etch Stop Layer (TESL) phase shift mask. In TESL, a transparent (etch stop) layer is deposited on the quartz substrate, followed by the deposition of a quartz layer having a thickness corresponding to the required phase angle for the used wavelength. On top a Chromium layer will be deposited. The patterning of this mask will be quite similar to the single trench variant. The difference is, that now an overetch can be applied for the phase definition resulting from the high etch selectivity of quartz to the etch stop material. The result of this approach should be that we can better control the phase depth and sidewall angle for dense and isolated structures. In this paper we will discuss the results of the printing tests performed using TESL masks especially with respect to litho process window, and we will compare these with the single trench undercut approach. Simulation results are presented with respect to shifter sidewall profile and TESL thickness in order to optimize image imbalance. Throughout the study we will correlate simulations and measurements to the after-MBOPC CD values for the shifter structures. These results will allow us to determine if the TESL AAPSM approach can be a more effective alternative to the single trench undercut approach.

Proceedings Article | 5 May 2005 Paper

Investigation of model-based physical design restrictions

Kevin Lucas, Stanislas Baron, Jerome Belledent, Robert Boone, Amandine Borjon, Christophe Couderc, Kyle Patterson, Lionel Riviere-Cazaux, Yves Rody, Frank Sundermann, Olivier Toublan, Yorick Trouiller, Jean-Christophe Urbani, Karl Wimmer

Proceedings Volume 5756, (2005) https://doi.org/10.1117/12.601105

KEYWORDS: Model-based design, Optical proximity correction, Optical lithography, Data modeling, Lithography, Systems modeling, Semiconductors, Resolution enhancement technologies, Reticles, Semiconducting wafers

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Proceedings Article | 6 December 2004 Paper

Predicting computer resource usage

Alfred Reich, Chi-Min Yuan, Robert Boone

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.568682

KEYWORDS: Resolution enhancement technologies, Error analysis, Data modeling, Statistical modeling, Statistical analysis, Databases, Semiconductors, Optical proximity correction, Photomasks, Product engineering

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Proceedings Article | 28 May 2004 Paper

Cost of ownership reduction for OPC development and production

Chi-Min Yuan, Bob Jarvis, Kevin Lucas, Robert Boone, Ruiqi Tian, Alfred Reich

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.535279

KEYWORDS: Optical proximity correction, Optical lithography, Lithography

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Proceedings Article | 3 May 2004 Paper

Combining OPC and design for printability into 65-nm logic designs

Kevin Lucas, Chi-Min Yuan, Robert Boone, Kirk Strozewski, Jason Porter, Ruiqi Tian, Karl Wimmer, Jonathan Cobb, Bill Wilkinson, Olivier Toublan

Proceedings Volume 5379, (2004) https://doi.org/10.1117/12.537655

KEYWORDS: Reticles, Optical proximity correction, Design for manufacturing, Lithography, Logic, Model-based design, Metals, Manufacturing, Optical lithography, Yield improvement

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Proceedings Article | 17 December 2003 Paper

OASIS vs. GDSII stream format efficiency

Alfred Reich, Kent Nakagawa, Robert Boone

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518271

KEYWORDS: Digital signal processing, Databases, Product engineering, Computer programming, Semiconductors, Photomasks, Photomask technology, Computer programming languages, Data storage

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Proceedings Article | 2 July 2003 Paper

Practical quality metrics for resolution enhancement software

Robert Boone, Kevin Lucas, Raphael Wynd, Mike Boatright, Matthew Thompson, Alfred Reich

Proceedings Volume 5043, (2003) https://doi.org/10.1117/12.485281

KEYWORDS: Resolution enhancement technologies, Software development, Lithography, Software engineering, Optical proximity correction, Photomasks, Semiconducting wafers, Computer architecture, Phase shifts, Reticles

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The past few years have seen an explosion in the application of software techniques to improve lithographic printing. Techniques such as optical proximity correction (OPC) and phase shift masks (PSM) increase resolution and CD control by distorting the mask pattern data from the original designed pattern. These software techniques are becoming increasingly complicated and non-intuitive; and the rate of complexity increase appears to be accelerating [1]. The benefits of these techniques to improve CD control and lower cost of ownership (COO) is balanced against the effort required to implement them and the additional problems they create. One severe problem for users of immature and complex software tools and methodologies is quality control, [2] as it ultimately becomes a COO problem. Software quality can be defined very simply as the ability of an application to meet detailed customer requirements. Software quality practice can be defined as the adherence to proven methods for planning, developing, testing and maintaining software. Although software quality for lithographic resolution enhancement is extremely important, the understanding and recognition of good software development practices among lithographers is generally poor. We therefore start by reviewing the essential terms and concepts of software quality that impact lithography and COO. We then propose methods by which semiconductor process and design engineers can estimate and compare the quality of the software tools and vendors they are evaluating or using. We include examples from advanced process technology resolution enhancement work that highlight the need for high-quality software practices, and show how to avoid many problems. Note that, although several authors have worked in software application development, our analysis here is somewhat of a black box analysis. The black box is the software development organization of an RET software supplier. Our access to actual developers within these organizations is very limited. In so far as our comments with respect to the internal workings of these development organizations go, we rely on the interactions we have had with applications engineers and other technical specialists who provide our interface to the development organizations.

Proceedings Article | 11 March 2002 Paper

GDSII considered harmful

Alfred Reich, Robert Boone, Warren Grobman, Clyde Browning

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458289

KEYWORDS: Resolution enhancement technologies, Photomasks, Optical proximity correction, Data modeling, Electronic design automation, Data conversion, Semiconducting wafers, Model-based design, Data processing, Binary data

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Showing 5 of 10 publications

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