Aluminium gallium nitride ((Al,Ga)N) quantum wells have attracted significant interest for optoelectronic device applications in the ultraviolet (UV) spectral range.
Here, we present an atomistic theoretical analysis of the impact of random alloy fluctuations on the electronic and optical properties of c-plane (Al,Ga)N/AlN quantum wells. Special attention is paid to the impact of the Al content on the results.
Our studies show that already random alloy fluctuations are sufficient to lead to strong carrier localization effects. Furthermore, our calculations reveal that the degree of optical polarization is strongly affected by alloy fluctuations.
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