Prof. Rui Chen Profile

Prof. Rui Chen

at Institute of Microelectronics of the CAS

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Author

Publications (28)

Proceedings Article | 10 April 2024 Paper

Prediction of etch bias using random forest model

Wenrui Wang, Hua Shao, Rui Chen, Yayi Wei

Proceedings Volume 12954, 129541F (2024) https://doi.org/10.1117/12.3010574

KEYWORDS: Etching, Data modeling, Random forests, Education and training, Machine learning, Calibration, Lithography, Decision trees, Scanning electron microscopy, Optical proximity correction

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Proceedings Article | 9 April 2024 Poster + Paper

A novel kinetic framework-based multiscale modeling of spatial atomic layer deposition process

Sen Deng, Hua Shao, Dandan Han, Rui Chen, Yayi Wei

Proceedings Volume 12958, 129580Q (2024) https://doi.org/10.1117/12.3010331

KEYWORDS: Atomic layer deposition, Molecules, Silicon, Deposition processes, Process modeling, Modeling, Vacuum chambers, Silicon films, Silicon nitride

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Proceedings Article | 9 April 2024 Poster + Paper

Investigation of the influence of hardmask morphology on bowing effect in nano-scale silicon plasma etching process

Ziyi Hu, Junjie Li, Hua Shao, Rui Chen, Yayi Wei

Proceedings Volume 12958, 129580O (2024) https://doi.org/10.1117/12.3009955

KEYWORDS: Particles, Reflection, Monte Carlo methods, Etching, Silicon, Plasma etching, Chlorine, Ions, Plasma, Modeling

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Proceedings Article | 9 April 2024 Poster + Paper

Modeling of silicon nitride chemical vapor deposition in high aspect ratio nano-scale substrate features

Hua Shao, Sen Deng, Chaoran Yang, Junjie Li, Rui Chen, Yayi Wei

Proceedings Volume 12958, 129580R (2024) https://doi.org/10.1117/12.3010859

KEYWORDS: Simulations, Silicon nitride, Diffusion, Chemical vapor deposition, Low pressure chemical vapor deposition, Ions, Scanning electron microscopy, Modeling, Calibration, 3D modeling

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Proceedings Article | 9 April 2024 Presentation + Paper

Study of selective dry etching Si0.7Ge0.3 with different plasma source in process of gate-all-around FET

Enxu Liu, Chaoran Yang, Junjie Li, Na Zhou, Longrui Xia, Rui Chen, Hua Shao, Jianfeng Gao, Zhenzhen Kong, Chenchen Zhang, Panpan Lai, Tao Yang, Yayi Wei, Junfeng Li, Jun Luo, Wenwu Wang

Proceedings Volume 12958, 129580F (2024) https://doi.org/10.1117/12.3010332

KEYWORDS: Etching, Plasma, Silicon, Dry etching, Field effect transistors, Gallium arsenide, Transistors, Particles, Resistance, Reflection

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Proceedings Article | 9 April 2024 Poster + Paper

Study of precisely controlled selective isotropic quasi-ALE of SiGe

Panpan Lai, Junjie Li, Hua Shao, Rui Chen, Yayi Wei

Proceedings Volume 12958, 129580P (2024) https://doi.org/10.1117/12.3010886

KEYWORDS: Etching, Atomic layer etching, Monte Carlo methods, Plasma, Germanium, Particles, Isotropic etching, Plasma etching, Nanosheets

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Proceedings Article | 1 May 2023 Poster + Paper

Study of selective isotropic etching effects of Si1-xGex in gate-all-around nanosheet transistor process

Qi Yan, Hua Shao, Junjie Li, Zhenzhen Kong, Xiaobin He, Junfeng Li, Tao Yang, Rui Chen, Yayi Wei

Proceedings Volume 12499, 124990K (2023) https://doi.org/10.1117/12.2658312

KEYWORDS: Etching, Silicon, Monte Carlo methods, Germanium, Isotropic etching, Nanosheets, Transistors, Gallium arsenide, Anisotropic etching, Particles

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Proceedings Article | 1 May 2023 Poster + Paper

Modeling of SiNx growth by chemical vapor deposition in nanosheet indentation

Hua Shao, Panpan Lai, Junjie Li, Guobin Bai, Qi Yan, Junfeng Li, Tao Yang, Rui Chen, Yayi Wei

Proceedings Volume 12499, 124990L (2023) https://doi.org/10.1117/12.2658152

KEYWORDS: Plasma enhanced chemical vapor deposition, Low pressure chemical vapor deposition, Silicon nitride, Chemical vapor deposition, Nanosheets, Monte Carlo methods, Particles, Modeling, Transistors, Solids

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Gate-all-around nanosheet (GAA-NS) transistors are commonly considered to be most competitive logic device in the future. In the GAA nanosheet transistor device fabrication process, the inner spacer formation is a critical step as it physically isolates the gate from the source/drain, and defines the gate length. After the selective lateral etch of the SiGe in alternative Si/SiGe stack, inner spacer material is deposited and SiN_x is commonly used. This gap filling process demands for highly uniform growth of materials in order to minimize transistor variability. As moving to three-dimensional stacked structure, lateral open features bring challenges to conventional deposition manners such as chemical vapor deposition (CVD). In our previous work, we have compared the filling performance between low-pressure chemical vapor deposition (LPCVD) and plasma enhanced chemical vapor deposition (PECVD), and demonstrated good SiN_x growth conformity by LPCVD in Si/SiGe indentation cavities. The cavity geometry was also found to pose significant impact on growth profile. However these works were carried out on isolated Si/SiGe nanosheet structure without neighboring unit. CVD process performance may degrade when moving from isolated to dense structures, especially when the critical dimension goes into tens of nanometers. In this paper, we present our latest simulation progress on the profile evolution of SiN_x CVD in dense Si/SiGe nanosheet structures with varying geometry and density of units. The SiN_x profile simulation indicates that LPCVD still maintains promising coverage performance in cavities, the SiN_x film thickness in the inner and outer side of unit are pretty close, while necking signature emerges near the unit top as process time increases. In contrast, PECVD exhibits pin holes within the cavity at the beginning of process, and the necking effect is relatively severe both in the cavity and near top of unit. We conduct systematic study on periodic stack structure array with different SiGe indentations. Pin holes are observed and get more pronounced in the PECVD process when the space between units is narrowed down. As the indentation decreases, pin holes become much smaller and exhibit better filling performance inside the lateral cavity.

Proceedings Article | 25 May 2022 Presentation + Paper

Modeling of SiN inner spacer deposition in gate-all-around nanosheet FET process

Hua Shao, Rui Chen, Junjie Li, Guobin Bai, Chen Li, Qi Yan, Yayi Wei

Proceedings Volume 12055, 1205502 (2022) https://doi.org/10.1117/12.2612445

KEYWORDS: Low pressure chemical vapor deposition, Plasma enhanced chemical vapor deposition, Scanning electron microscopy, Silicon, Ions, Field effect transistors, Transmission electron microscopy, Process modeling, Deposition processes, Computer simulations

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SPIE Journal Paper | 23 March 2021

Projection-based high coverage fast layout decomposing algorithm of metal layer for accelerating lithography friendly design at full chip level

Xiaojing Su, Dong Shen, Yayi Wei, Yajuan Su, Lisong Dong, Rui Chen, Tianyang Gai, Libin Zhang

JM3, Vol. 20, Issue 01, 013401, (March 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.1.013401

KEYWORDS: Metals, Lithography, Optical proximity correction, Standards development, Computer simulations, Logic, Transistors, System integration, Semiconductors, Semiconducting wafers

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Proceedings Article | 22 February 2021 Poster + Paper

A study on diffraction-based overlay measurement based on FDTD method

Buqing Xu, Qiang Wu, Rui Chen, Lisong Dong, Libin Zhang, Yayi Wei

Proceedings Volume 11611, 116113B (2021) https://doi.org/10.1117/12.2581909

KEYWORDS: Overlay metrology, Chemical mechanical planarization, Finite-difference time-domain method, Diffraction, Signal processing, Semiconductor manufacturing, Metrology, Visible radiation, Tolerancing, Reliability

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Proceedings Article | 22 February 2021 Presentation + Paper

Source mask optimization based on design pattern library at 7nm technology node

Xiaojing Su, Lisong Dong, Yayi Wei, Tianyang Gai, Yajuan Su, Rui Chen

Proceedings Volume 11614, 116140P (2021) https://doi.org/10.1117/12.2584716

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Proceedings Article | 22 February 2021 Poster + Paper

Fast optical proximity correction based on graph convolution network

Shengen Zhang, Xu Ma, Junbi Zhang, Rui Chen, Yihua Pan, ChengZhen Yu, Lisong Dong, Yayi Wei, Gonzalo Arce

Proceedings Volume 11613, 116130V (2021) https://doi.org/10.1117/12.2583773

KEYWORDS: Optical proximity correction, Signal processing, Convolution, Imaging systems, Systems modeling, Photomasks, Optimization (mathematics), Machine learning, Lithography, Integrated circuits

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Proceedings Article | 22 February 2021 Poster + Paper

Lithography layout classification based on graph convolution network

Junbi Zhang, Xu Ma, Shengen Zhang, Xianqiang Zheng, Rui Chen, Yihua Pan, Lisong Dong, Yayi Wei, Gonzalo Arce

Proceedings Volume 11613, 116130U (2021) https://doi.org/10.1117/12.2583558

KEYWORDS: Lithography, Convolution, Signal processing, Network architectures, Image classification, Transform theory, Source mask optimization, Machine learning, Integrated circuits, Fourier transforms

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Proceedings Article | 22 February 2021 Presentation + Paper

Multi-level layout hotspot detection based on multi-classification with deep learning

Tianyang Gai, Tong Qu, Xiaojing Su, Shuhan Wang, Lisong Dong, Libin Zhang, Rui Chen, Yajuan Su, Yayi Wei, Tianchun Ye

Proceedings Volume 11614, 116140W (2021) https://doi.org/10.1117/12.2583726

KEYWORDS: Data modeling, Neural networks, Sensors, Performance modeling, Optics manufacturing, Machine learning, Lithography, Convolutional neural networks, Yield improvement, Statistical modeling

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Proceedings Article | 20 September 2020 Presentation + Paper

Design rule optimization for via layers of multiple patterning solution at 7nm technology node

Xiaojing Su, Yayi Wei, Lisong Dong, Libin Zhang, Yajuan Su, Rui Chen

Proceedings Volume 11518, 115180O (2020) https://doi.org/10.1117/12.2573157

KEYWORDS: Optical lithography, Immersion lithography, Lithography, Photomasks, Source mask optimization, Manufacturing, Overlay metrology, Data processing, Standards development, Back end of line

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Proceedings Article | 23 March 2020 Presentation + Paper

Systematic DTCO flow for yield improvement at 14/12nm technology node

Xiaojing Su, Yayi Wei, Rui Chen, Yajuan Su, Lisong Dong, Joe Kwan, Recoo Zhang, Chunshan Du, Qijian Wan, Xinyi Hu

Proceedings Volume 11328, 113280L (2020) https://doi.org/10.1117/12.2551861

KEYWORDS: Lithography, Chemical mechanical planarization, Optical proximity correction, Design for manufacturing, Metals, Resolution enhancement technologies, Optical lithography, Silicon, Manufacturing, Etching

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Proceedings Article | 23 March 2020 Paper

Impact of flare on source mask optimization in EUVL for 7nm technology node

Lisong Dong, Rui Chen, Taian Fan, Rongbo Zhao, Yayi Wei, Jianjun Jia, Zac Levinson, Thuc Dam, Jay Lee, Yongdong Wang, Larry Melvin

Proceedings Volume 11323, 113232E (2020) https://doi.org/10.1117/12.2552008

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Source mask optimization, Nanoimprint lithography, Lithography, Extreme ultraviolet, Electroluminescence, Reflectivity, Critical dimension metrology, Light scattering

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Proceedings Article | 23 March 2020 Paper

Compressive sensing method for EUV source optimization using different bases

Jiaxin Lin, Lisong Dong, Taian Fan, Xu Ma, Rui Chen, Xiaoran Zhang, Hans-Juergen Stock, Yayi Wei

Proceedings Volume 11323, 113232J (2020) https://doi.org/10.1117/12.2551897

KEYWORDS: Extreme ultraviolet, Compressed sensing, Extreme ultraviolet lithography, Computer simulations

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Proceedings Article | 23 March 2020 Paper

Comparison of different lithographic source optimization methods based on compressive sensing

Zhiqiang Wang, Xu Ma, Rui Chen, Gonzalo Arce, Lisong Dong, Hans-Juergen Stock, Yayi Wei

Proceedings Volume 11327, 1132716 (2020) https://doi.org/10.1117/12.2551037

KEYWORDS: Source mask optimization, Reconstruction algorithms, Lithography, Computer simulations, Imaging systems, Lithographic illumination, Compressed sensing, Computational lithography, Optical lithography

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Proceedings Article | 23 March 2020 Paper

Via optimization methodology for enhancing robustness of design at 14/12nm technology node

Xiaojing Su, Libin Zhang, Yayi Wei, Rui Chen, Yajuan Su, Lisong Dong, Chunshan Du, Qijian Wan, Xinyi Hu

Proceedings Volume 11328, 1132810 (2020) https://doi.org/10.1117/12.2551902

KEYWORDS: Metals, Optical proximity correction, Photovoltaics, Lithography, Double patterning technology, Optical lithography, Yield improvement, Microelectronics, Back end of line, Critical dimension metrology

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SPIE Journal Paper | 18 November 2019

SoulNet: ultrafast optical source optimization utilizing generative neural networks for advanced lithography

Ying Chen, Yibo Lin, Lisong Dong, Tianyang Gai, Rui Chen, Yajuan Su, Yayi Wei, David Pan

JM3, Vol. 18, Issue 04, 043506, (November 2019) https://doi.org/10.1117/12.10.1117/1.JMM.18.4.043506

KEYWORDS: Lithography, Model-based design, Optimization (mathematics), Neural networks, Data modeling, Machine learning, Photomasks, Mathematical modeling, Ultrafast phenomena, Source mask optimization

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Proceedings Article | 26 September 2019 Paper

Impact of mask topography and flare on process window of EUV lithography

Rongbo Zhao, Lisong Dong, Rui Chen, Yayi Wei

Proceedings Volume 11147, 111471V (2019) https://doi.org/10.1117/12.2536871

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Lithography, Lithographic illumination, Fiber optic illuminators, Numerical simulations, Deep ultraviolet, Absorption, Reflectivity, Surface roughness

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Proceedings Article | 26 September 2019 Paper

Impact of EUV multilayer mask defects on imaging performance and its correction methods

Yunyun Hao, Lisong Dong, Xi Chen, Rui Chen, Taian Fan, Yayi Wei, Tianchun Ye

Proceedings Volume 11147, 111471B (2019) https://doi.org/10.1117/12.2536707

KEYWORDS: Photomasks, Extreme ultraviolet, Lithography, Deep ultraviolet, Reflectivity, Manufacturing, Polishing, Plasma etching, Optical proximity correction, Extreme ultraviolet lithography

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Proceedings Article | 26 September 2019 Paper

A method for compensating lithographic influence of EUV mask blank defects by an advanced genetic algorithm

Ruixuan Wu, Lisong Dong, Rui Chen, Tianchun Ye, Yayi Wei

Proceedings Volume 11147, 111471U (2019) https://doi.org/10.1117/12.2536796

KEYWORDS: Photomasks, Lithography, Genetic algorithms, Extreme ultraviolet, Extreme ultraviolet lithography, Detection and tracking algorithms, Image quality, Manufacturing, High volume manufacturing, Optical proximity correction

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Proceedings Article | 26 September 2019 Paper

A fast DFM-driven standard cell qualification approach for critical layers of 14nm technology node

Xiaojing Su, Rui Chen, Yayi Wei, Yajuan Su, Lisong Dong

Proceedings Volume 11148, 1114818 (2019) https://doi.org/10.1117/12.2536626

KEYWORDS: Standards development, Optical proximity correction, Lithography, Manufacturing, Metals

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SPIE Journal Paper | 30 May 2019

Probability prediction model for bridging defects induced by combined influences from lithography and etch variations

Xiaojing Su, Dong Shen, Yayi Wei, Taian Fan, Lisong Dong, Libin Zhang, Yajuan Su, Rui Chen, Tianchun Ye

JM3, Vol. 18, Issue 02, 023503, (May 2019) https://doi.org/10.1117/12.10.1117/1.JMM.18.2.023503

KEYWORDS: Line edge roughness, Failure analysis, Bridges, Etching, Lithography, Probability theory, Overlay metrology, Photomasks, Metals, Optical proximity correction

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Proceedings Article | 20 March 2019 Paper

Design rule exploration for width sensitive zone for metal layers in advanced nodes

Xiaojing Su, Lisong Dong, Yayi Wei, Yajuan Su, Rui Chen, Chunshan Du

Proceedings Volume 10962, 1096212 (2019) https://doi.org/10.1117/12.2514783

KEYWORDS: Photomasks, Source mask optimization, Metals, Lithography, Etching, Semiconducting wafers, Electroluminescence, Molybdenum, Process modeling, Image classification

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Showing 5 of 28 publications

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