We describe the design and test of flip-chip bonded optoelectronic CMOS devices based on Peregrine Semiconductor's 0.5 micron Ultra-Thin Silicon on sapphire (UTSi) technology. The UTSi process eliminates the substrate leakage that typically results in crosstalk and reduces parasitic capacitance to the substrate, providing many benefits compared to bulk silicon CMOS. The low-loss synthetic sapphire substrate is optically transparent and has a coefficient of thermal expansion suitable for flip-chip bonding of vertical cavity surface emitting lasers (VCSELs) and detectors. We have designed two different UTSi CMOS chips. One contains a flip-chip bonded 1 x 4 photodiode array, a receiver array, a double edge triggered D-flip flop-based 2047-pattern pseudo random bit stream (PRBS) generator and a quadrature-phase LC-voltage controlled oscillator (VCO). The other chip contains a flip-chip bonded 1 x 4 VCSEL array, a driver array based on high-speed low-voltage differential signals (LVDS) and a full-balanced differential LC-VCO. Each VCSEL driver and receiver has individual input and bias voltage adjustments. Each UTSi chip is mounted on different printed circuit boards (PCBs) which have holes with about 1 mm radius for optical output and input paths through the sapphire substrate. We discuss preliminary testing of these chips.
Composing a slab-waveguide by spin-coating dye-doped organic monomer onto a glass substrate under UV irradiation to be polymer, frequency selective lasing is observed by the side pumping of an interference pattern of pump beam. The thin-film slab-waveguide consists of Rhodamine B (Rh-B)-doped thio ether methacrylate (TEMA) with the thickness of approximately 2 μm. Pumping the thin-film by the interference pattern of Nd:YAG (SHG) 530 nm laser with the gain period Λ of 15 μm, the lasing output is selectively observed near 610 nm, in contrast to no lasing under a uniform pumping. Both effects of the pump energy on the lasing output and of the gain period on the wavelength are also described.
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