We have demonstrated RT pulsed operation of AlGaN-based UV-B LDs. In this presentation, we would like to introduce our recent efforts to achieve higher output power. To increase the output power of LDs, it is essential to increase the external differential quantum efficiency ηd, increase the input current, and reduce the threshold current. The ηd is determined by the carrier injection efficiency ηi, internal losses and mirror losses in the LD. In LD with the polarization doped structure, the polarized positive fixed charge formed at the interface of the pn junction allows free electrons to easily overflow to the p-AlGaN cladding layer side. Therefore, improving the ηi is one of the most effective approaches to increase the ηd. In this study, we investigated the increase of ηi through device simulators and actual experiments. Through these investigations, we have succeeded in achieving a peak power of over 150 mW in RT pulsed driving of UV-B LDs.
In recent years, reports on highly efficient UV LEDs and UV laser diodes have been published one after another. Considering the application field of UV semiconductor light-emitting devices, it is essential to achieve high output, i.e., high current density operation, and it is important to establish a fabrication process for vertical devices to realize this. A 1cm square wafer with deep-UV LEDs stacked on a sapphire substrate was successfully separated from the substrate to fabricate vertical LEDs. In this study, an Al0.68Ga0.32N underling layer was formed on an AlN template with periodic pillars, and a process that enables reproducible substrate detachment was successfully developed. The fabricated vertical LEDs successfully exhibit remarkable luminescence characteristics (peak wavelength: 298 nm) up to a current density of ~43 kA cm-2 at room temperature and pulse driving. Applications to high-power ultraviolet region LEDs and laser diodes are expected.
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