Dr. Sebastian Metzner Profile

Dr. Sebastian Metzner

at Otto von Guericke Univ Magdeburg

SPIE Involvement:

Author

Publications (13)

Proceedings Article | 4 March 2019 Presentation

Nanometer scale cathodoluminescence of GaN quantum-dots on a wavelength-matched deep-UV distributed Bragg reflector (Conference Presentation)

Hannes Schuermann, Gordon Schmidt, Christoph Berger, Sebastian Metzner, Peter Veit, Jürgen Bläsing, Frank Bertram, Armin Dadgar, André Strittmatter, Jürgen Christen, Stefan Kalinowski, Gordon Callsen, Stefan Jagsch, Markus Wagner, Axel Hoffmann

Proceedings Volume 10929, 109290A (2019) https://doi.org/10.1117/12.2510350

KEYWORDS: Vapor phase epitaxy, Gallium nitride, Deep ultraviolet, Distributed Bragg reflectors, Quantum dots, Reflectivity, Epitaxy, Single photon, Absorption, Gallium

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Proceedings Article | 14 March 2018 Presentation

Investigation of desorption-induced GaN quantum-dot formation using cathodoluminescence microscopy (Conference Presentation)

Gordon Schmidt, Hannes Schürmann, Sebastian Metzner, Peter Veit, Frank Bertram, Christoph Berger, Jürgen Bläsing, Armin Dadgar, André Strittmatter, Jürgen Christen

Proceedings Volume 10532, 105320N (2018) https://doi.org/10.1117/12.2290737

KEYWORDS: Gallium nitride, Quantum dots, Scanning electron microscopy, Electron microscopes, Metals, Vapor phase epitaxy, Scanning transmission electron microscopy, Microscopy, Ultraviolet radiation, Single photon

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Proceedings Article | 14 March 2018 Presentation

A-plane GaN epitaxial lateral overgrowth structures: growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy (Conference Presentation)

Kasey Hogan, Sebastian Metzner, Frank Bertram, Isra Mahaboob, Emma Rocco, F. Shahedipour-Sandvik, Anja Dempewolf, Jürgen Christen

Proceedings Volume 10532, 105320V (2018) https://doi.org/10.1117/12.2290249

KEYWORDS: Visualization, Vapor phase epitaxy, Interfaces, Gallium nitride, Epitaxial lateral overgrowth, Metalorganic chemical vapor deposition, Luminescence, Microscopy, Sapphire, Silica

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Proceedings Article | 14 March 2018 Presentation

Nanoscopic insights into the structural and optical properties of a thick InGaN shell grown coaxially on GaN microrod (Conference Presentation)

Frank Bertram, Marcus Mueller, Gordon Schmidt, Sebastian Metzner, Peter Veit, Juergen Christen, Jana Hartmann, Hao Zhou, H.H. Wehmann, Andreas Waag

Proceedings Volume 10532, 105321E (2018) https://doi.org/10.1117/12.2288262

KEYWORDS: Indium gallium nitride, Gallium nitride, Luminescence, Electron microscopes, Scanning transmission electron microscopy, Optical properties, Nanorods, Metals, Vapor phase epitaxy, Scanning electron microscopy

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Proceedings Article | 23 February 2018 Presentation + Paper

Recent progress in nonpolar and semi-polar GaN light emitters on patterned Si substrates

K. Ding, V. Avrutin, N. Izyumskaya, S. Metzner, F. Bertram, J. Christen, U. Ozgur, H. Morkoc

Proceedings Volume 10532, 1053208 (2018) https://doi.org/10.1117/12.2291281

KEYWORDS: Gallium nitride, Silicon, Light emitting diodes, Indium gallium nitride, Crystals, Scanning electron microscopy, Indium, Polarization, Optical properties, Interfaces

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Proceedings Article | 13 March 2015 Paper

Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes

Morteza Monavarian, Sebastian Metzner, Natalia Izyumskaya, Serdal Okur, Fan Zhang, Nuri Can, Saikat Das, Vitaliy Avrutin, Ümit Özgür, Frank Bertram, Jürgen Christen, Hadis Morkoç

Proceedings Volume 9363, 93632P (2015) https://doi.org/10.1117/12.2080325

KEYWORDS: Indium, Gallium nitride, Light emitting diodes, Indium gallium nitride, Heterojunctions, Epitaxial lateral overgrowth, Metalorganic chemical vapor deposition, Quantum efficiency, Indium nitride, Chemical vapor deposition

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Proceedings Article | 13 March 2015 Paper

Enhancement of optical and structural quality of semipolar (11-22) GaN by introducing nanoporous SiNx interlayers

Morteza Monavarian, Sebastian Metzner, Natalia Izyumskaya, Marcus Müller, Serdal Okur, Fan Zhang, Nuri Can, Saikat Das, Vitaliy Avrutin, Ümit Özgür, Frank Bertram, Juergen Christen, Hadis Morkoç

Proceedings Volume 9363, 93632I (2015) https://doi.org/10.1117/12.2079180

KEYWORDS: Gallium nitride, Epitaxial lateral overgrowth, X-ray optics, Scanning electron microscopy, Luminescence, X-ray diffraction, X-rays, Excitons, Sapphire, Chemical vapor deposition

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Proceedings Article | 8 March 2014 Paper

Optical properties of m-plane GaN grown on patterned Si(112) substrates by MOCVD using a two-step approach

N. Izyumskaya, S. Okur, F. Zhang, M. Monavarian, V. Avrutin, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, H. Morkoç

Proceedings Volume 8986, 898628 (2014) https://doi.org/10.1117/12.2037930

KEYWORDS: Gallium nitride, Near field optics, Metalorganic chemical vapor deposition, Silicon, Near field scanning optical microscopy, Scanning electron microscopy, Point spread functions, Image quality, Excitons, Chemical vapor deposition

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Proceedings Article | 8 March 2014 Paper

Determination of carrier diffusion length in p- and n-type GaN

Shopan Hafiz, Sebastian Metzner, Fan Zhang, Morteza Monavarian, Vitaliy Avrutin, Hadis Morkoç, Christopher Karbaum, Frank Bertram, Jürgen Christen, Bernard Gil, Ümit Özgür

Proceedings Volume 8986, 89862C (2014) https://doi.org/10.1117/12.2040645

KEYWORDS: Diffusion, Gallium nitride, Indium gallium nitride, Magnesium, Absorption, Luminescence, Line scan image sensors, Doping, Integration, Sapphire

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Proceedings Article | 8 March 2014 Paper

Impact of extended defects on optical properties of (1-101)GaN grown on patterned Si

S. Okur, N. Izyumskaya, F. Zhang, V. Avrutin, S. Metzner, C. Karbaum, F. Bertram, J. Christen, H. Morkoç, Ü. Özgür

Proceedings Volume 8986, 89862B (2014) https://doi.org/10.1117/12.2040621

KEYWORDS: Gallium nitride, Near field optics, Light emitting diodes, Polarization, Silicon, Point spread functions, Near field scanning optical microscopy, Indium gallium nitride, Luminescence, Excitons

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Proceedings Article | 4 March 2013 Paper

Depth distribution of carrier lifetimes in semipolar (1101) GaN grown by MOCVD on patterned Si substrates

N. Izyumskaya, S. Okur, F. Zhang, V. Avrutin, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, H. Morkoç

Proceedings Volume 8625, 86252G (2013) https://doi.org/10.1117/12.2005514

KEYWORDS: Gallium nitride, Near field scanning optical microscopy, Silicon, Metalorganic chemical vapor deposition, Optical properties, Near field optics, Luminescence, Light emitting diodes, Carrier dynamics, Temperature metrology

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Proceedings Article | 28 February 2012 Paper

Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates

N. Izyumskaya, S. Liu, V. Avrutin, S. Okur, F. Zhang, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, D. Smith, H. Morkoç

Proceedings Volume 8262, 826224 (2012) https://doi.org/10.1117/12.909235

KEYWORDS: Gallium nitride, Silicon, Sapphire, Metalorganic chemical vapor deposition, Optical properties, Scanning electron microscopy, Quantum wells, Light emitting diodes, Luminescence, Chemical vapor deposition

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Proceedings Article | 19 February 2011 Paper

Optical properties of nonpolar (1-100) and semipolar (1-101)GaN grown by MOCVD on Si patterned substrates

N. Izyumskaya, S. J. Liu, S. Okur, M. Wu, V. Avrutin, Ü. Özgür, S. Metzner, F. Bertram, J. Christen, L. Zhou, D. Smith, H. Morkoç

Proceedings Volume 7939, 79391W (2011) https://doi.org/10.1117/12.875861

KEYWORDS: Gallium nitride, Silicon, Light emitting diodes, Sapphire, Metalorganic chemical vapor deposition, Scanning electron microscopy, Optical properties, Silica, Wet etching, Carbon

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Showing 5 of 13 publications

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