To a major candidate and beyond, directed self-assembly (DSA) lithography is investigated on DRAM contact-hole fabrication. We perform a systematic study about behavior of asymmetric PS-b-PMMA block copolymers (BCP) within pillar confinement for DSA and find that selectively removed PMMA contact domain has a different morphology according to chemically modified pillar surfaces. We calculate the perturbation of PMMA contacts by pillar diameter using free energy magnitude model. This established model provides practical engineering insight for present pillar scheme and future graphoepitaxial self-assembly techniques for semiconductor DSA procedure.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.