Ms. Seung-Hee Baek Profile

Seung-Hee Baek

at Synopsys Korea Inc

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Publications (9)

Proceedings Article | 23 March 2020 Presentation + Paper

Advanced memory cell design optimization with inverse lithography technology

Jiro Higuchi, Weiting Wang, Takamasa Takaki, Hiromitsu Mashita, Shigeki Nojima, Ahmed Omran, Ken Hanafusa, Seunghee Baek, Ryan Chen, Yukio Asaka, Kyle Braam, Hironobu Taoka, Guangming Xiao

Proceedings Volume 11328, 1132806 (2020) https://doi.org/10.1117/12.2557847

KEYWORDS: Photomasks, Lithography, Optical proximity correction, Bridges, Data analysis, Semiconducting wafers, Resolution enhancement technologies, SRAF

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Proceedings Article | 23 March 2020 Paper

EUV OPC methodology for beyond 20nm memory cell by simulation data

Jiunhau Fu, Chiang Lin Shih, Chun Cheng Liao, Eric Huang, Elsley Tan, John Tsai, Ming Yun Chen, Yuan Pin Liao, Seung Hee Baek

Proceedings Volume 11323, 113232H (2020) https://doi.org/10.1117/12.2551669

KEYWORDS: Optical proximity correction, Extreme ultraviolet, Molybdenum, Photomasks, Data modeling, Critical dimension metrology, Source mask optimization, Semiconducting wafers, EUV optics, Array processing

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Proceedings Article | 28 March 2017 Paper

Using pattern matching to increase performance in hotspot fixing flows

Bradley Falch, Seung-Hee Baek, John Tsai, Mingchao Ji, Jun Zhu

Proceedings Volume 10148, 101481A (2017) https://doi.org/10.1117/12.2258095

KEYWORDS: Optical proximity correction, Databases, 3D modeling, Lithography, Photomasks, Computer programming, Design for manufacturability, Manufacturing, Current controlled current source, Environmental sensing

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As feature sizes and pitches continue to decrease, more complex correction algorithms are needed to solve increasingly difficult geometric configurations. Usage of these more complex algorithms results in unacceptably long time-to-mask when applied to an entire design. In many cases, the more complex algorithms are only required in a small percentage of areas of the entire design, and these areas are not always known prior to tapeout. Hotspot fixing (HSF) flows are increasingly used to fix these hotspot areas to minimize errors and decrease time-to-mask. These flows involve “recorrecting” a design, using the previous correction output as the input to the HSF flow. This input file contains a hierarchy that was optimized for the original correction. Hotspot areas are frequently smaller than the original correction areas and frequently repeat in unique cell outputs of the original correction, so the optimal hierarchy for a HSF fix flow may be very different from the original correction. A new hierarchy, optimized for HSF, is difficult to form from the corrected output. This paper describes the usage of pattern-matching to regain hierarchical compression for identical hotspot areas that are not repeating cells in the original correction. Using this pattern-matching HSF flow, turnaround time for the hotspot fixing can be more than 50X faster than re-using the original correction’s hierarchy for complex HSF methods. These significant gains can be achieved in spite of the additional complexity it can add to the flow. In the case where simpler/faster HSF correction methods are used, significant turnaround time gains can still be made by using this pattern matching technique.

Hotspot fixing methodologies are increasingly deployed during tapeouts as a means to optimize the tradeoffs between complex, highly accurate correction methods and faster methods that are sufficient for most pattern areas.¹ However, pattern database hierarchies may not be optimum for these hotspot fixing flows, as they are optimized for the initial correction run or method. This paper examines the usage of pattern matching to regain hierarchy and significantly reduce turn-around-time for complex hotspot fixing methods. Gains in turn-around-time can be well over 50 times faster than reusing the original correction’s hierarchy.

Proceedings Article | 1 October 2013 Paper

Model-driven target optimization to resolve design hotspots through image quality enhancement

Sung-Woo Lee, Tom Cecil, Guangming Xiao, Mindy Lee, Jung-Hoe Choi, Seung-Hee Baek, Jin-Hyuck Jeon, Chan Ha Park, Dave Kim, Kevin Lucas

Proceedings Volume 8880, 88801U (2013) https://doi.org/10.1117/12.2026140

KEYWORDS: Optical proximity correction, Image quality, Optimization (mathematics), Nanoimprint lithography, Image enhancement, Image processing, Design for manufacturing, Resolution enhancement technologies, Neodymium, Nano opto mechanical systems

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Proceedings Article | 19 May 2008 Paper

Mask process effect aware OPC modeling

Kyoil Koo, Sooryong Lee, Jason Hwang, Daniel Beale, Matt St. John, Robert Lugg, Seunghee Baek, Munhoe Do, Junghoe Choi, Youngchang Kim, Minjong Hong

Proceedings Volume 7028, 70283E (2008) https://doi.org/10.1117/12.793122

KEYWORDS: Photomasks, Etching, Optical proximity correction, Data modeling, Semiconducting wafers, Lithography, Statistical modeling, Wafer-level optics, Process modeling, Particles

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Proceedings Article | 6 December 2004 Paper

High flow rate development: process optimization using megasonic immersion development (MID)

Daniel Courboin, Jong Woo Choi, Sang Hyun Jung, Seung Hee Baek, Lee Ju Kim

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569774

KEYWORDS: Etching, Photomasks, Critical dimension metrology, Picture Archiving and Communication System, Photoresist processing, Lithography, Scanning electron microscopy, Standards development, Semiconducting wafers, Process control

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Proceedings Article | 20 August 2004 Paper

Investigations on microloading effect: a parallel approach to PGSD (proximity gap suction development)

Daniel Courboin, Jong Woo Choi, S. Jung, Seung Hee Baek, Lee-Ju Kim, Chang Nam Ahn, Hong-Seok Kim

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557708

KEYWORDS: Critical dimension metrology, Standards development, Photomasks, Lithography, Semiconducting wafers, Diffractive optical elements, Photoresist processing, Acoustics, Temperature metrology, Physics

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Proceedings Article | 28 August 2003 Paper

Negative chemically amplified resist in making mask for a logic device with high pattern density

Kyung-Han Nam, Hyun-Joon Cho, Seung Hee Baek, Seong-Ho Jeong, Chang-Nam Ahn, Hong-Seok Kim

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504188

KEYWORDS: Photomasks, Etching, Logic devices, Line edge roughness, Mask making, Scanning electron microscopy, Photoresist processing, Resistance, Critical dimension metrology, Dry etching

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Proceedings Article | 1 August 2002 Paper

Fogging and pattern loading effect by writing strategy

Junsik Cho, Seung Hee Baek, Kyung-Han Nam, H. J. Cho, Daniel Courboin, Seong-Ho Jeong, In-Soo Lee, Cheol Shin, Hong-Seok Kim

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476943

KEYWORDS: Critical dimension metrology, Dry etching, Etching, Error analysis, Mask making, Photomasks, Optical proximity correction, Modulation, Logic devices, Scanning electron microscopy

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Showing 5 of 9 publications

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