Widely tunable laser diodes are key components for agile optical networks and optical sensing systems. In this paper, a
monolithic widely tunable sampled grating distributed Bragg reflector (SGDBR) laser diode was fabricated using LPMOCVD.
Butt-joint technique was adopted to realize lateral integration of MQW active area and passive waveguide.
The etching process and MOCVD regrowth were well optimized to obtain ultra low loss butt coupling and improve the
reproducibility. The coupling loss of butt-joint waveguide is as low as 7cm-1. The fabricated SGDBR laser used a typical
ridge waveguide (RWG) structure due to the advantage of the simple fabrication processing. It was consisted of four
sections, two "sampled grating" passive reflectors (front mirror and rear mirror), MQW gain section, and phase section.
This SGDBR laser diode had 26mA threshold current and 9mW maximum output power at 100-mA continuous-wave
operation. Through control of the injection current of front mirror and rear mirror, the spectra with the tuning range of
more than 41nm was obtained. And the wavelength can be precise aligned at ITU wavelength by well adjustment of the
phase section injection current. The side mode suppression ratio in the whole tuning range was more than 30dB.
In this paper, a modified stacking method to fabricate photonic crystal fibers with squeezed lattice is presented, for the first time to our knowledge. This modified method can realize different structures of photonic crystal fibers with different expected squeezing ratios. The influences of the structural parameters on the squeezing ratio and birefringence are separately discussed in detail. Moreover, the birefringence characteristics of such photonic crystal fibers are simulated by using supercell lattice method.
KEYWORDS: Polarization, Signal attenuation, Time metrology, Picosecond phenomena, Signal detection, Modulation, Sensors, Polarizers, Feedback signals, Analytical research
A novel polarization dependence loss (PDL) measurement approach using the degree of polarization (DOP) feedback
signal has been introduced in this paper. Both the theoretical analysis and the experimental simulation show that, while
maintaining a very acceptable level of measurement accuracy, this PDL measurement method could effectively reduce
the measurement time. In comparison with the current PDL measurement technologies, the most prominent property of
our method is that it could provide different PDL measurement accuracy and range by changing the value of polarization
mode dispersion (PMD) element in the measurement setup.
In this paper, several triangular-lattice highly birefringent PCFs are analyzed on the base of the full vector model. Several properties of them, such as the PCF's modal field, the birefringence and the dispersion, are simulated by the supercell lattice method. Moreover, a comparison is made among them to study the impact of air-holes configuration of PCFs on their propagation properties. The simulation results show that air-holes at different position have different impact on the propagation properties of PCFs.
The impact of polarization dependence loss (PDL) on the degree of polarization (DOP) feedback signal in polarization mode dispersion (PMD) compensation is discussed in this paper. PDL affects DOP only in the presence of PMD. And in the presence of PMD and PDL, DOP relates not only to both the PMD and the PDL vectors, but also to the signal's polarization states. The PDL minimum endangering PMD compensation is determined by the step size of the practical PMD compensating algorithm, and the DGD value in optical fiber systems. DOP could no longer act as the feedback signal in PMD compensation unless PDL in the fiber system has been effectively eliminated before PMD compensation.
Multiquantum-well (MQW) laser diodes are widely used and being researched for many years. And simulation makes an important part in improving the characteristics of laser diodes. Simulating an equivalent circuit model of lasers is usually used. Many circuit models based on carriers’ and photons’ rate equations have been developed. In the three level scheme, quasi-two-dimensional gateway states between unbound and confined states has been introduced. And it treats each well independently from all the others. So It has more precision than many other models. But before simulation, the parameters in this model are needed. How to get these parameters is vital. But no many people tell us how to do it. This is a complex work. Many parameters can be got from calculation, others must be got from measurement. In this paper the method of getting the parameters is provided. Using these parameters and three level Model for MQW lasers, the dynamic and static behavior are simulated by SPICE circuit emulator.
Three dry etching processes using a high ion density inductively coupled plasma (ICP) system in fabrication of optoelectronic device have been briefly presented in this paper. Smooth etched surface, high rate and selectivity ICP InP etching using Cl2/CH4/N2 have been demonstrated first time in fabrications of semiconductor laser. Low damage CH4/H2 ICP InP sub-micron grating etching using SiNx mask can be used for SG-DBR tunable laser fabrication. Anisotropic Cl2/CH4/Ar ICP etching with vertical profile has been used for GaAs/AlGaAs DBR layers etching in vertical cavity surface emitting laser (VCSEL) fabrication. The etching characteristics have been investigated by conventional optical microscopy and scanning electron microscopy (SEM).
This paper has analyzed the random phase errors of AWG (array waveguides grating) induced by fabricate processing and their affects on crosstalk level of AWG between non-adjacent channels theoretically. And a very useful formula which can estimate crosstalk level has been proposed. By using this formula, the DWDM (Dense Wavelength De-multiplexer Multiplexer) components based on AWG can be optimized to reduce their crosstalk level. Finally, a very good design example which non-adjacent crosstalk is -40dB by using this formula has been given.
We successfully fabricated the angled strip DC-PBH style SLED devices by using low damage ICP dry etching technology. The mesa of DC-PBH SLED was formed by Cl2/N2 ICP dry etching process. The low DC bias (<100 eV) of ICP etching technology can reduce the damage caused by ordinary RIE technique and Cl2/N2 based process can get rid of chemical damage caused by CH4/H2. High out-put power SLED device was obtained by using low damage ICP dry etching, the out-put power is 2 mW at 100 mA inject current (CW) at 25°C. Through optimized the angle of the active strip and AR optical film design, the full width of the half maximum (FWHM) of the spectrum at 2 mW out-put power can reach 46.4nm and the ripple of the SLED spectrum is low down to 0.4 dB.
The National Hi-Tech R&D Program (the 863-Program) is to enhance China's international competitiveness and improve China's overall capability of R&D in high technology and to bridge the gap between the laboratory and the marketplace. Advanced Optoelectronic Materials and Devices are one of the technology areas strategically important to China's information industry. It has been one of the major priority research fields funded by the 863 Program even since 1987 when the plan was first initiated. From the viewpoint of Priority Expert Group (PEG), this paper will give a comprehensive introduction to advanced optoelectronic materials and devices in the national 863-Program during the current five years period (up to 2005) which includes the main aims and goals and especially the main content of each subject.
Current optical communication systems are more and more relying on the advanced opto-electronic components. A
series of revolutionary optical and optoelectronics components technology accounts for the fast progress and field
deployment of high-capacity telecommunication and data-transmission systems. Since 1990s, the optical
communication industry in China entered a high-speed development period and its wide deployment had already
established the solid base for China information infrastructure. In this presentation, the main progress of optoelectronics
components and technology in China are reviewed, which includes semiconductor laser diode/photo receiver, fiber
optical amplifier, DWDM multiplexer/de-multiplexer, dispersion compensation components and all optical network
node components, such as optical switch, OADM, tunable optical filters and variable optical attenuators, etc. Integration
discrete components into monolithic/hybrid platform component is an inevitable choice for the consideration of
performance, mass production and cost reduction. The current status and the future trends of OEIC and PIC components
technology in China will also be discuss mainly on the monolithic integration DFB LD + EA modulator, and planar
light-wave circuit (PLC) technology, etc.
Chirped fiber grating (CFG) is an important device that can be used to realize dispersion compensation of a fiber communication system and filter signals at the same time. Besides the ordinary way used to measure the spectrum properties of FBGs, an accurate method of measuring dispersion is crucial to specifying CFGs. This paper presents a simple system to suit the needs. The simple system is mainly composed of two facilities: a tunable laser and a lightwave component analyzer. In the system, a wavelength resolution of 1 pm and a phase resolution of 0.010, i.e. about 0.1 ps for time delay are obtained. The system can also be used in the measurement of the optical spectrum of the fiber grating.
In this paper, a novel hybrid passive component for EDFA was reported. This component integrated the 1550 nm polarization independent optical isolator and the 980/1550 nm pump WDM within a single compact case, and realized the reduction of insertion loss, cost and package size. The following techniques were adopted in fabricating this component: (1) high efficiency beveled end-face off-axis coupling between twin core ferrule and GRIN rod; (2) the pump WDM is based on GRIN rod and optical interference filter; (3) the optical polarization independent isolator using birefringence wedge, etc. This component was packaged in an ordinary isolator case as small as (Phi) 8 X 40 mm. The insertion loss of signal is less than 0.9 dB; the insertion loss of pump is less than 0.8 dB; the isolation of the built in isolator is more than 42 dB with +/- 15 nm pass-band and the return loss is more than 50 dB. This component has shown very stable performance against the environmental changes. It had been applied to a single forward pumped EDFA module, and has achieved the following good performance: more than 29 dB small signal gain, less than 5 dB noise figure, more than +10 dBm output power. The EDFA module has the dimension largely reduced to 15 X 100 X 130 mm.
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