KEYWORDS: Laser induced breakdown spectroscopy, High dynamic range imaging, Signal to noise ratio, Copper, Charge-coupled devices, Silver, Statistical analysis
The latest generation of fast-gated cameras based on scientific CMOS (sCMOS) sensor technology provide significant enhancement in terms of high acquisition rates and simultaneous high dynamic range compared to CCD, Interline or EMCCD-based gated detectors. Gated intensified sCMOS technology enables the development of novel approaches to fast spectroscopy, for example in the context of micro Laser-Induced Breakdown Spectroscopy (µLIBS) imaging. We present examples of advanced LIBS imaging enabled by this gated sCMOS technology and latest generation of ultrastable kilohertz Q-switch diode lasers. Spatial resolution down to 10 µm is achieved by incorporating an automated translation stage. Timing diagrams and triggering schemes for the translation state and intensified camera are discussed. LIBS images with up to 4K definition (3840x2160 pixels), obtained in less than 3 hours, are presented. Such results show the spatially resolved elemental distributions of Si, Fe, Cu, Al, Mg, Ca and Ag for several geological samples, demonstrating the high throughput potential of such approach and the great reduction of experimental time, while preserving chemical information integrity.
The advent of rapid, cost-effective, high-powered lasers are driving forward advancements in the fields of for soft X-ray and EUV imaging, ptychography, spectroscopy and tomography. This coupled with increasing investment in industrial EUV lithography and semiconductor metrology processes is creating demand for fast, high resolution and sensitive detectors in the 20 eV to 10 keV range. Here we present the latest detector developments in the field of sCMOS for direct EUV and soft X-ray detection. We demonstrate how sCMOS technology is able to overcome the limitations of slow scan CCD technology to provide high resolution direct EUV and soft X-ray detection with a greater than 16-fold speed increase whilst maintaining low noise compared to classical CCD detectors.
Much can be learned about charge and magnetization dynamics at surfaces and in nanometer thickness films through terahertz emission spectroscopy (TES). In some respects, TES is the difference-frequency analog of second harmonic generation (SHG). As such, interface-specific properties contribute to the generation of a THz pulse upon ultrafast optical excitation. In addition, there can be bulk contributions as well, as is also true in SHG. The dependence of THz pulse emission on surface orientation has been used to study carrier dynamics, both real and virtual, in GaAs(111). We find that the dependence on the angle of linearly polarized excitation is well described by known theory. Magnetization dynamics in polycrystalline nickel films ranging in thickness from 5 nm to 60 nm have also been characterized with TES. Distinct bulk and surface contributions each play a role, and their origins are discussed.
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