Compact and robust external-cavity diode laser (ECDL) systems are a mandatory requirement for many next-generation quantum technology applications, e.g. quantum communication and quantum sensors. Today’s commercially available ECDLs are used for proof-of-principle demonstrations of such applications, however do not meet the requirements for the use in real-world environments. We investigate a novel design for a compact and robust ECDL suitable for the integration into first quantum technology applications. Experimental results of first prototypes are presented and compared to a commercially available ECDL and numerical simulations.
For several fields such as spectroscopy, metrology, and lithography, laser sources in the ultraviolet (UV @ 386 nm) or deep ultraviolet (DUV @ 193 nm) spectral range rely on broad band or pulsed laser systems such as excimer lasers. Highly brilliant semiconductor laser systems could advance these fields further as they are more reliable and easier to handle.
One way to achieve the UV emission is using a 772 nm emitting semiconductor master oscillator - power amplifier (MOPA) laser system whose emission is frequency doubled once or twice in a later step. The laser system will be built into a small and compact package and consists of a MO, which is a distributed feedback (DFB) ridge waveguide (RW) laser. The diffraction limited laser emission with a single spectral mode is coupled into the PA for the amplification of the output power up to 3 W. The PA is a semiconductor laser with a RW and a tapered section. Optical feedback can be minimized by using a micro-optical isolator, which is placed between MO and PA that allows a linewidth of < 3 MHz.
We will present further experimental results of the MOPA system in detail. This includes the emission characteristics, the spectral emission behavior, and the robust setup by applying several thermal cycles and shaking tests.
On the base of the same laser system, wavelengths of 780 nm or 785 nm could facilitate small rubidium atomic clocks or Raman spectroscopy respectively. Especially when using distributed Bragg reflector laser diodes an even smaller linewidth can be achieved.
We present a novel compact laser device based on a semiconductor master-oscillator power-amplifier (MOPA) emitting at 772 nm, suitable for quantum optic and spectroscopy. The optical performance of the laser device is characterized. For miniaturized lasers the thermal management is challenging, we therefore perform thermal simulations and measurements.
The first demonstrator is emitting more than 3 W optical power with a linewidth below 2lMHz. Using this MOPA design also compact devices for quantum optics (e.g. rubidium atomic clock) and seed lasers for frequency conversion can be realized [1].
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.