The new "EXX" phenomena in macroscopic, microscopic and nanoscopic metal-semiconductor hybrid structures is
described. Here E = extraordinary and XX = magnetoresistance (EMR), piezoconductance (EPC), optoconductance
(EOC), and electroconductance (EEC). This new class of phenomena is based on the control and dominance of the
geometric contributions, e.g. sample shape, lead placement, the presence of inhomogenieties, etc., to the transport
properties of a physical system in contrast to traditional transport phenomena which are dominated by the intrinsic
properties, e.g. mobility, carrier density, band structure, etc. The underlying phyiscs of EXX phenomena is elucidated
with particular emphasis on the use of analytic and finite element analysis methods to quantitatively account for the
observed EXX signal enhancement. The potential application of EXX phenomena to the study of the biologically
relevant properties of cells such as surface charge density will be described.
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