Patterning of contact hole using KrF lithography system for the sub 90nm technology node is one of the most
challenging tasks. Contact hole pattern can be printed using Off-Axis Illumination(OAI) such as dipole or Quasar or
Quadrupole at KrF lithography system. However this condition usually offer poor image contrast and poor Depth Of
Focus(DOF), especially isolated contact hole. Sub-resolution assist features (SRAF) have been shown to provide
significant process window enhancement and across chip CD variation reduction. The insertion of SRAF in a contact
design is mostly done using rule based scripting. However the rule based SRAF strategy that has been followed
historically is not always able to increase the process window of these 'forbidden pitches' sufficiently to allow
sustainable manufacturing. Especially in case of random contact hole, rule-based SRAF placement is almost impossible
task. We have used an inverse lithography technique to treat random contact hole.
In this paper we proved the impact of SRAF configuration. Inverse lithography technique was successfully used to treat
random contact holes. It is also shown that the experimental data are easily predicted by calibrating aerial image
simulation results. Finally, a methodology for optimizing SRAF rules using inverse lithography technology is described.
As a conclusion, we suggest methodology to set up optimum SRAF configuration with rule and inverse lithography
technology.
Patterning of contact holes using KrF lithography system is one of the most challenging tasks for the sub-90nm
technology node,. Contact hole patterns can be printed with a KrF lithography system using Off-Axis Illumination (OAI)
such as Quasar or Quadrupole. However, such a source usually offers poor image contrast and poor depth of focus
(DOF), especially for isolated contact holes. In addition to image contrast and DOF, circularity of hole shape is also an
important parameter for device performance. Sub-resolution assist features (SRAF) can be used to improve the image
contrast, DOF and circularity for isolated contact holes. Application of SRAFs, modifies the intensity profile of isolated
features to be more like dense ones, improving the focal response of the isolated feature. The insertion of SRAFs in a
contact design is most commonly done using rule-based scripting, where the initial rules for configuring the SRAFs are
derived using a simulation tool to determining the distance of assist features to main feature, and the size and number of
assist features to be used. However in the case of random contact holes, rule-based SRAF placement is a nearly
impossible task.
To address this problem, an inverse lithography technique was successfully used to treat random contact holes. The
impact of SRAF configuration on pattern profile, especially circularity and process margin, is demonstrated. It is also
shown that the experimental data are easily predicted by calibrating aerial image simulation results. Finally, a
methodology for optimizing SRAF rules using inverse lithography technology is described.
Patterning of contact holes using KrF lithography system is one of the most challenging tasks for the sub-90nm
technology node,. Contact hole patterns can be printed with a KrF lithography system using Off-Axis Illumination (OAI)
such as Quasar or Quadrupole. However, such a source usually offers poor image contrast and poor depth of focus
(DOF), especially for isolated contact holes. In addition to image contrast and DOF, circularity of hole shape is also an
important parameter for device performance. Sub-resolution assist features (SRAF) can be used to improve the image
contrast, DOF and circularity for isolated contact holes. Application of SRAFs, modifies the intensity profile of isolated
features to be more like dense ones, improving the focal response of the isolated feature. The insertion of SRAFs in a
contact design is most commonly done using rule-based scripting, where the initial rules for configuring the SRAFs are
derived using a simulation tool to determining the distance of assist features to main feature, and the size and number of
assist features to be used.. However in the case of random contact holes, rule-based SRAF placement is a nearly
impossible task.
To address this problem, an inverse lithography technique was successfully used to treat random contact holes. The
impact of SRAF configuration on pattern profile, especially circularity and process margin, is demonstrated. It is also
shown that the experimental data are easily predicted by calibrating aerial image simulation results. Finally, a
methodology for optimizing SRAF rules using inverse lithography technology is described.
As integrated circuit technology advances and features shrink, the scale of critical dimension (CD) variations induced by
lithography effects become comparable with the critical dimension of the design itself. At the same time, each
technology node requires tighter margins for errors introduced in the lithography process. Optical and process models --
the black boxes that simulate the pattern transfer onto silicon -- are becoming more and more concerned with those
different process errors. As a consequence, an optical proximity correction (OPC) model consists mainly of two parts; a
physical part dealing with the physics of light and its behavior through the lithographical patterning process, and an
empirical part to account for any process errors that might be introduced between writing the mask and sampling
measurements of patterns on wafer. Understanding how such errors can affect a model's stability and predictability, and
taking such errors into consideration while building a model, could actually help convergence, stability, and
predictability of the model when it comes to design patterns other than those used during model calibration and
verification. This paper explores one method to quickly enhance model accuracy and stability.
We discussed to KrF process extension for 90 nm technology node. The continuous shrinkage of critical dimensions on
sub 130 nm devices becomes a key point to improve process margin with pattern resolution problem for lithography.
Recently, according to development demand of high density and high integration device, it is tendency that the shrink
rate of design rule is gradually accelerated. It is difficult to develop with image contrast problem around k1=0.25 which
is a theoretical process limit region. We need to technology development which is available to having resolution for sub
90nm line and space by using KrF lithography not by using ArF lithography.
In generally, KrF have not been used in nano-process such as 90nm technology. In this study, however, we can apply
the KrF in 90nm technology by means of minimizing the error range in the nano-process, optimizing the process, and
extending the process margin. This Application of KrF in 90nm technology results in elimination of additional
investment for development of 90nm technology.
Finally, we will show which simulation and experimental results such as normalized image log slope, pupil plane,
image of focus variation, process window, top view image, photo resist and etch profile, and pitch linearity.
As the resolution requirement downing 90 nm beyond, hole pattern is one of the most challenging features to print in
the semiconductor manufacturing process. Especially, when hole patterns have dense array of holes as they are consisted
of several columns with single row, there can be serious distorted form from desired patterns such as oval hole shape and
bridge between holes. It is due to nature of diffraction which generates interaction of diffracted light from near holes.
Overlap margin reduction by hole shape change as oval shape is very harmful in sub-90nm photolithography process
which has very narrow overlay margin. To increase overlap margin, it is necessary to solve these phenomenon. Optical
Proximity Correction (OPC) has been used for overcoming oval hole shape. Through the result of OPC modeling and
simulation, we could get optimized mask bias of hole. Sometimes, good experimental data will be help for this modeling
and OPC process. From these OPC simulation and experimental data, most compatible rule based OPC process could be
developed. In this paper, we suggest the method of improving oval hole shape by using OPC simulation and making rule
base OPC process from experimental data.
In resolution limited lithography process, the image deformation is getting severer. This is very important area where
we need to fully understand and improved since the image deformation is directly giving poor CD control effect.
Especially, contact hole image will be more sensitive since it has lower k1 factor that line and spaced pattern. This image
deformation of contact hole can give some severe electrical fail due to not opened contact. In our case, we observed
some critical failure mode of diagonal induced by abnormal contact hole shape of rough edge.
In this paper, we investigate how deformed contact hole image impacted on degradation of device performance in
electrical properties and yield and how we can improve it. To quantitatively analyze image deformation of contact hole,
we recommend new measurement method first. This new measurement gives exact image deformation amount at
different experimental conditions.
Finally, we will show how experimental conditions such as soft bake temperature, post expose bake temperature,
hardening bake temperature, illumination condition and mask bias change image deformation of contact hole.
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