We propose a construction and calibration method of an absolute coordinate system for lithography tools. In the conventional overlay control system, subsequent layers are overlaid on the 1st layer that could have unknown wafer distortion. This is inefficient, because the distortion of the 1st layer may be large. A high-level overlay control can be realized with the absolute coordinate system by correcting the 1st layer to zero distortion. This can be possible by using absolute alignment metrology system. In order to confirm our theory, we report experimental results of the absolute grid construction and matching accuracy among multiple lithography tools.
The final lithography accuracy is determined by what is known as the “on-product” performance, which includes product
wafer-related errors and long-term stability. It is evident that on-product performance improvement is absolutely
imperative now, and will become even more crucial in coming years. In order to meet customers’ future requirements,
we have developed the next-generation lithography system focusing on wafer alignment advancements to improve onproduct
performance.
This newly developed wafer alignment system will help customers achieve their aggressive next-generation
manufacturing accuracy and productivity requirements. In this paper, we describe the details of the new wafer
measurement system and provide supporting performance data.
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