Dr. Takeshi Yamane Profile

Dr. Takeshi Yamane

SPIE Involvement:

Author

Publications (42)

Proceedings Article | 26 March 2019 Presentation + Paper

Mask 3D effect reduction and defect printability of etched multilayer EUV mask

Takashi Kamo, Takeshi Yamane, Yasutaka Morikawa, Susumu Iida, Takayuki Uchiyama, Shunko Magoshi, Satoshi Tanaka

Proceedings Volume 10957, 109571C (2019) https://doi.org/10.1117/12.2515273

KEYWORDS: Photomasks, Extreme ultraviolet, Tantalum, Semiconducting wafers, Extreme ultraviolet lithography, Scanning electron microscopy, Lithography, Lithographic illumination, Line width roughness, Line edge roughness

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Proceedings Article | 26 March 2019 Presentation + Paper

Influence of mask line width roughness on programmed pattern defect printability

Takeshi Yamane, Yasutaka Morikawa, Takashi Kamo

Proceedings Volume 10957, 109570M (2019) https://doi.org/10.1117/12.2515145

KEYWORDS: Photomasks, Line width roughness, Semiconducting wafers, Critical dimension metrology, Scanning electron microscopy, Extreme ultraviolet, Extreme ultraviolet lithography, Metrology, Edge roughness, Defect inspection

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Proceedings Article | 12 June 2018 Paper

Blank defect coverage budget for 16nm half-pitch single EUV exposure

Rik Jonckheere, Takeshi Yamane, Yasutaka Morikawa, Takashi Kamo

Proceedings Volume 10807, 108070H (2018) https://doi.org/10.1117/12.2502792

KEYWORDS: Printing, Photomasks, Semiconducting wafers, Extreme ultraviolet lithography, Atomic force microscopy, Extreme ultraviolet, Visualization, Inspection, Tolerancing, Optical alignment

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Proceedings Article | 19 March 2018 Paper

Printability estimation of EUV blank defect using actinic image

Takeshi Yamane, Takashi Kamo, Rik Jonckheere

Proceedings Volume 10583, 105831F (2018) https://doi.org/10.1117/12.2297503

KEYWORDS: Semiconducting wafers, Photomasks, Critical dimension metrology, Extreme ultraviolet, Wafer-level optics, Extreme ultraviolet lithography, Multilayers, Inspection, Image processing, Optical alignment

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Proceedings Article | 13 July 2017 Paper

Application of EUV dark field image for EUVL mask fabrication

Takeshi Yamane, Hidehiro Watanabe

Proceedings Volume 10454, 104540N (2017) https://doi.org/10.1117/12.2280133

KEYWORDS: Critical dimension metrology, Multilayers, Inspection, Image processing, Particles, Extreme ultraviolet, Extreme ultraviolet lithography, Mask making, Photomasks, Semiconducting wafers

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Proceedings Article | 18 March 2016 Paper

Advances in the detection capability on actinic blank inspection

Takeshi Yamane, Tsuyoshi Amano, Noriaki Takagi, Hidehiro Watanabe, Ichro Mori, Tomohisa Ino, Tomohiro Suzuki, Kiwamu Takehisa, Hiroki Miyai, Haruhiko Kusunose

Proceedings Volume 9776, 97761G (2016) https://doi.org/10.1117/12.2222747

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet lithography, Light scattering, Multilayers, Defect detection, Extreme ultraviolet, Semiconducting wafers, Lithographic illumination, Mirrors, EUV optics, CCD cameras

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Proceedings Article | 9 July 2015 Paper

Analysis of a low-aspect phase defect for actinic EUVL mask blank inspection

Takeshi Yamane, Tomohisa Ino, Hiroki Miyai

Proceedings Volume 9658, 96580N (2015) https://doi.org/10.1117/12.2197502

KEYWORDS: Light scattering, Prototyping, Photomasks, Semiconducting wafers, Mirrors, Inspection, Reflectivity, Extreme ultraviolet lithography, Defect detection, Interference (communication)

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Proceedings Article | 28 July 2014 Paper

Performance in practical use of actinic EUVL mask blank inspection

Takeshi Yamane, Yongdae Kim, Noriaki Takagi, Tsuneo Terasawa, Tomohisa Ino, Tomohiro Suzuki, Hiroki Miyai, Kiwamu Takehisa, Haruhiko Kusunose

Proceedings Volume 9256, 92560P (2014) https://doi.org/10.1117/12.2067566

KEYWORDS: Photomasks, Inspection, Surface roughness, Prototyping, Semiconducting wafers, Defect detection, Critical dimension metrology, Extreme ultraviolet lithography, Light scattering, CCD cameras

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Proceedings Article | 28 July 2014 Paper

Defect analysis on actinic blank inspection tool

Tomohiro Suzuki, Hiroki Miyai, Kiwamu Takehisa, Haruhiko Kusunose, Takeshi Yamane, Hidehiro Watanabe, Ichiro Mori

Proceedings Volume 9256, 92560O (2014) https://doi.org/10.1117/12.2069197

KEYWORDS: Inspection, Extreme ultraviolet lithography, Photomasks, Extreme ultraviolet, Image classification, Mirrors, Geometrical optics, Ray tracing, Lithography, Manufacturing

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Proceedings Article | 17 April 2014 Paper

At wavelength observation of phase defect embedded in EUV mask using microscope technique

Tsuneo Terasawa, Tsuyoshi Amano, Takeshi Yamane, Hidehiro Watanabe, Mitsunori Toyoda, Tetsuo Harada, Takeo Watanabe, Hiroo Kinoshita

Proceedings Volume 9048, 904825 (2014) https://doi.org/10.1117/12.2046156

KEYWORDS: Extreme ultraviolet, Photomasks, Microscopes, Semiconducting wafers, EUV optics, Extreme ultraviolet lithography, Mirrors, Inspection, Critical dimension metrology, Lithography

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Proceedings Article | 7 August 2013 Paper

Background level analysis on an actinic inspection image of EUVL mask blank

Takeshi Yamane, Myoungsoo Lee, Tsuneo Terasawa

Proceedings Volume 8701, 870117 (2013) https://doi.org/10.1117/12.2031583

KEYWORDS: Photomasks, Surface roughness, Atomic force microscopy, Inspection, Prototyping, Extreme ultraviolet lithography, Light scattering, Semiconducting wafers, Quartz, Image analysis

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Proceedings Article | 28 June 2013 Paper

The capability of high magnification review function for EUV actinic blank inspection tool

Hiroki Miyai, Tomohiro Suzuki, Kiwamu Takehisa, Haruhiko Kusunose, Takeshi Yamane, Tsuneo Terasawa, Hidehiro Watanabe, Ichiro Mori

Proceedings Volume 8701, 870118 (2013) https://doi.org/10.1117/12.2030712

KEYWORDS: Inspection, Mirrors, Extreme ultraviolet, Extreme ultraviolet lithography, Photomasks, Charge-coupled devices, Defect detection, Multilayers, Switches, Ions

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Proceedings Article | 1 April 2013 Paper

Experimental phase defect printability evaluation using a programmed phase defect in EUVL mask

Tsuneo Terasawa, Tsuyoshi Amano, Sunghyun Oh, Takeshi Yamane, Hidehiro Watanabe

Proceedings Volume 8679, 86791B (2013) https://doi.org/10.1117/12.2011347

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Semiconducting wafers, Scanning electron microscopy, Neodymium, Line edge roughness, Error analysis, Critical dimension metrology, Atomic force microscopy, Bridges

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Proceedings Article | 1 April 2013 Paper

EUV actinic blank inspection: from prototype to production

Anna Tchikoulaeva, Hiroki Miyai, Tomohiro Suzuki, Kiwamu Takehisa, Haruhiko Kusunose, Takeshi Yamane, Tsuneo Terasawa, Hidehiro Watanabe, Soichi Inoue, Ichiro Mori

Proceedings Volume 8679, 86790I (2013) https://doi.org/10.1117/12.2011776

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Defect inspection, Prototyping, Extreme ultraviolet lithography, Defect detection, High volume manufacturing, Metrology, Mirrors

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Proceedings Article | 8 November 2012 Paper

Impact of EUVL mask surface roughness on an actinic blank inspection image and a wafer image

Takeshi Yamane, Tsuneo Terasawa

Proceedings Volume 8522, 85220H (2012) https://doi.org/10.1117/12.964965

KEYWORDS: Surface roughness, Photomasks, Inspection, Semiconducting wafers, Reflectivity, Extreme ultraviolet lithography, Light scattering, Critical dimension metrology, Signal detection, Prototyping

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Proceedings Article | 30 June 2012 Paper

Improved signal to noise ratio in actinic EUVL mask blank inspection

Takeshi Yamane, Tsuneo Terasawa

Proceedings Volume 8441, 84411H (2012) https://doi.org/10.1117/12.978628

KEYWORDS: Inspection, Prototyping, Signal to noise ratio, Photomasks, Extreme ultraviolet lithography, Imaging systems, Multilayers, Light scattering, EUV optics, CCD cameras

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Proceedings Article | 30 June 2012 Paper

EUV actinic blank inspection tool with a high magnification review mode

Tomohiro Suzuki, Hiroki Miyai, Kiwamu Takehisa, Haruhiko Kusunose, Takeshi Yamane, Tsuneo Terasawa, Hidehiro Watanabe, Soichi Inoue, Ichiro Mori

Proceedings Volume 8441, 844115 (2012) https://doi.org/10.1117/12.964983

KEYWORDS: Inspection, Mirrors, Extreme ultraviolet, Switches, EUV optics, Photomasks, Charge-coupled devices, Cameras, Extreme ultraviolet lithography, Electroluminescent displays

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Proceedings Article | 23 March 2012 Paper

Phase defect printability analyses: dependence of defect type and EUV exposure condition

Tsuneo Terasawa, Takeshi Yamane, Yukiyasu Arisawa, Hidehiro Watanabe

Proceedings Volume 8322, 83221R (2012) https://doi.org/10.1117/12.916387

KEYWORDS: Critical dimension metrology, Extreme ultraviolet lithography, Photomasks, Extreme ultraviolet, Inspection, Near field optics, EUV optics, Image analysis, Bridges, Phase shifts

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Proceedings Article | 23 March 2012 Paper

Study of actinic dark-field inspection with programmed amplitude defects

Noriaki Takagi, Takeshi Yamane, Yukiyasu Arisawa, Tsuneo Terasawa

Proceedings Volume 8322, 832235 (2012) https://doi.org/10.1117/12.916320

KEYWORDS: Inspection, Carbon, 3D modeling, Light scattering, Extreme ultraviolet, Extreme ultraviolet lithography, Defect inspection, Near field optics, EUV optics, Multilayers

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Proceedings Article | 23 March 2012 Paper

Impact of the phase defect structure on an actinic dark-field blank inspection signal and wafer printability

Tsuyoshi Amano, Tetsunori Murachi, Takeshi Yamane, Yukiyasu Arisawa, Tsuneo Terasawa

Proceedings Volume 8322, 832234 (2012) https://doi.org/10.1117/12.916309

KEYWORDS: Palladium, Signal detection, Semiconducting wafers, Defect detection, Extreme ultraviolet, Inspection, Transmission electron microscopy, Printing, Photomasks, Wafer inspection

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Proceedings Article | 14 October 2011 Paper

Phase defect analysis with actinic full-field EUVL mask blank inspection

Takeshi Yamane, Toshihiko Tanaka, Tsuneo Terasawa, Osamu Suga

Proceedings Volume 8166, 81660G (2011) https://doi.org/10.1117/12.898898

KEYWORDS: Inspection, Photomasks, Defect detection, Multilayers, Extreme ultraviolet lithography, Imaging systems, Transmission electron microscopy, Semiconducting wafers, Light scattering, Atomic force microscopy

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SPIE Journal Paper | 1 October 2011

Evaluation of extreme ultraviolet mask defect using blank inspection, patterned mask inspection, and wafer inspection

Takashi Kamo, Tsuneo Terasawa, Takeshi Yamane, Hiroyuki Shigemura, Noriaki Takagi, Tsuyoshi Amano, Kazuo Tawarayama, Mari Nozoe, Toshihiko Tanaka, Osamu Suga, Ichiro Mori

JM3, Vol. 10, Issue 04, 043006, (October 2011) https://doi.org/10.1117/12.10.1117/1.3644984

KEYWORDS: Photomasks, Inspection, Defect detection, Extreme ultraviolet, Wafer inspection, Semiconducting wafers, Defect inspection, Extreme ultraviolet lithography, Printing, Multilayers

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Proceedings Article | 20 April 2011 Paper

EB defect inspection of EUV resist patterned wafer for hp 32 nm and beyond

Mari Nozoe, Toshihiko Tanaka, Takashi Kamo, Shinji Kubo, Tomohiro Tamori, Noriaki Takagi, Takeshi Yamane, Tsuneo Terasawa, Hiroyuki Shigemura, Osamu Suga

Proceedings Volume 7971, 797123 (2011) https://doi.org/10.1117/12.879346

KEYWORDS: Inspection, Photomasks, Semiconducting wafers, Defect detection, Extreme ultraviolet, Wafer inspection, Defect inspection, Line width roughness, Image processing, Signal to noise ratio

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Proceedings Article | 6 April 2011 Paper

Phase defect printability and actinic dark-field mask blank inspection capability analyses

Tsuneo Terasawa, Takeshi Yamane, Takashi Kamo, Toshihiko Tanaka, Osamu Suga

Proceedings Volume 7969, 79690V (2011) https://doi.org/10.1117/12.879398

KEYWORDS: Inspection, Photomasks, Defect detection, Critical dimension metrology, Signal detection, Extreme ultraviolet lithography, Semiconducting wafers, Printing, Extreme ultraviolet, Cameras

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Proceedings Article | 29 March 2011 Paper

Evaluation of EUV mask defect using blank inspection, patterned mask inspection, and wafer inspection

Takashi Kamo, Tsuneo Terasawa, Takeshi Yamane, Hiroyuki Shigemura, Noriaki Takagi, Tsuyoshi Amano, Kazuo Tawarayama, Mari Nozoe, Toshihiko Tanaka, Osamu Suga, Ichiro Mori

Proceedings Volume 7969, 79690J (2011) https://doi.org/10.1117/12.879551

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Wafer inspection, Defect detection, Extreme ultraviolet, Printing, Scanning electron microscopy, Multilayers, Extreme ultraviolet lithography

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Proceedings Article | 29 September 2010 Paper

Improvement of actinic blank inspection and phase defect analysis

Takeshi Yamane, Toshihiko Tanaka, Tsuneo Terasawa, Osamu Suga

Proceedings Volume 7823, 78231V (2010) https://doi.org/10.1117/12.864290

KEYWORDS: Inspection, CCD cameras, Cameras, Imaging systems, Signal detection, Defect detection, Critical dimension metrology, Multilayers, Interference (communication), Defect inspection

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Proceedings Article | 29 September 2010 Paper

Printability of EUVL mask defect detected by actinic blank inspection tool and 199-nm pattern inspection tool

Takashi Kamo, Tsuneo Terasawa, Takeshi Yamane, Hiroyuki Shigemura, Noriaki Takagi, Tsuyoshi Amano, Toshihiko Tanaka, Kazuo Tawarayama, Osamu Suga, Ichiro Mori

Proceedings Volume 7823, 78231U (2010) https://doi.org/10.1117/12.864305

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Extreme ultraviolet lithography, Defect detection, Particles, Extreme ultraviolet, Scanning electron microscopy, Lithography, Printing

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Proceedings Article | 26 May 2010 Paper

Actinic EUVL mask blank inspection capability with time delay integration mode

Takeshi Yamane, Toshihiko Tanaka, Tsuneo Terasawa, Osamu Suga

Proceedings Volume 7748, 774803 (2010) https://doi.org/10.1117/12.867979

KEYWORDS: Photomasks, Inspection, Critical dimension metrology, Signal detection, Defect detection, Extreme ultraviolet lithography, Imaging systems, Atomic force microscopy, Semiconducting wafers, Multilayers

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Proceedings Article | 18 March 2010 Paper

Actinic phase defect detection and printability analysis for patterned EUVL mask

Tsuneo Terasawa, Takeshi Yamane, Toshihiko Tanaka, Osamu Suga, Takashi Kamo, Ichiro Mori

Proceedings Volume 7636, 763602 (2010) https://doi.org/10.1117/12.846678

KEYWORDS: Inspection, Photomasks, Defect detection, Extreme ultraviolet lithography, Extreme ultraviolet, Semiconducting wafers, Multilayers, EUV optics, Phase shifts, Bridges

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Proceedings Article | 30 September 2009 Paper

Actinic EUVL mask blank inspection capability with time delay integration mode

Takeshi Yamane, Toshihiko Tanaka, Tsuneo Terasawa, Osamu Suga

Proceedings Volume 7488, 74881B (2009) https://doi.org/10.1117/12.829724

KEYWORDS: Inspection, Defect detection, Extreme ultraviolet lithography, Imaging systems, Signal detection, Photomasks, Defect inspection, Charge-coupled devices, Multilayers, Detection and tracking algorithms

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Proceedings Article | 11 May 2009 Paper

Actinic EUVL mask blank inspection and phase defect characterization

Takeshi Yamane, Teruo Iwasaki, Toshihiko Tanaka, Tsuneo Terasawa, Osamu Suga, Toshihisa Tomie

Proceedings Volume 7379, 73790H (2009) https://doi.org/10.1117/12.824258

KEYWORDS: Inspection, Defect detection, Photomasks, Particles, Imaging systems, Atomic force microscopy, Scanning electron microscopy, Extreme ultraviolet lithography, Defect inspection, Multilayers

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Proceedings Article | 18 March 2009 Paper

The performance of an actinic full-field EUVL mask blank inspection system

Takeshi Yamane, Teruo Iwasaki, Toshihiko Tanaka, Tsuneo Terasawa, Osamu Suga, Toshihisa Tomie

Proceedings Volume 7271, 72713H (2009) https://doi.org/10.1117/12.813595

KEYWORDS: Inspection, Signal to noise ratio, Imaging systems, Defect detection, Image quality, Photomasks, Charge-coupled devices, Mirrors, Extreme ultraviolet lithography, EUV optics

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Proceedings Article | 18 March 2009 Paper

Development of actinic full-field EUV mask blank inspection tool at MIRAI-Selete

Tsuneo Terasawa, Takeshi Yamane, Toshihiko Tanaka, Teruo Iwasaki, Osamu Suga, Toshihisa Tomie

Proceedings Volume 7271, 727122 (2009) https://doi.org/10.1117/12.813602

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Mirrors, EUV optics, Light sources, Charge-coupled devices, Defect detection, Multilayers, Defect inspection

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Proceedings Article | 17 October 2008 Paper

Signal analysis for the actinic full-field EUVL mask blank inspection system

Takeshi Yamane, Teruo Iwasaki, Toshihiko Tanaka, Tsuneo Terasawa, Osamu Suga, Toshihisa Tomie

Proceedings Volume 7122, 71222D (2008) https://doi.org/10.1117/12.801420

KEYWORDS: Inspection, Mirrors, Imaging systems, Point spread functions, Light scattering, Surface roughness, Photomasks, Extreme ultraviolet lithography, Defect detection, Multilayers

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Proceedings Article | 19 May 2008 Paper

Impact of mask blank and mirror surface roughness on actinic EUVL mask blank inspection signal

Takeshi Yamane, Toshihiko Tanaka, Tsuneo Terasawa, Osamu Suga, Toshihisa Tomie

Proceedings Volume 7028, 70281S (2008) https://doi.org/10.1117/12.793070

KEYWORDS: Mirrors, Surface roughness, Photomasks, Inspection, Point spread functions, Light scattering, Spatial frequencies, Extreme ultraviolet lithography, Defect inspection, Charge-coupled devices

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Proceedings Article | 14 May 2007 Paper

CD metrology by an immersion microscope with high NA condenser lens for 45-nm generation masks

Takeshi Yamane, Rikiya Taniguchi, Takashi Hirano

Proceedings Volume 6607, 660711 (2007) https://doi.org/10.1117/12.728950

KEYWORDS: Microscopes, Photomasks, Calibration, Critical dimension metrology, Semiconducting wafers, Wafer-level optics, Binary data, Cadmium, Diffraction, Optical microscopes

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Proceedings Article | 20 May 2006 Paper

Assurance of CD for 45-nm half-pitch with immersion microscope

Takeshi Yamane, Rikiya Taniguchi, Takashi Hirano

Proceedings Volume 6283, 628314 (2006) https://doi.org/10.1117/12.681866

KEYWORDS: Calibration, Microscopes, Critical dimension metrology, Edge detection, Scanning electron microscopy, Photomasks, Cadmium, Optical microscopes, Semiconducting wafers, SRAF

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SPIE Journal Paper | 1 July 2005

Sidewall effect of photomask by scanning electron microscope and optical critical dimension metrology