Dr. Thomas Marschner Profile

Dr. Thomas Marschner

at Carl Zeiss SMT GmbH

SPIE Involvement:

Author

Publications (23)

Proceedings Article | 5 October 2023 Paper

Paper

EUV mask defect inspection for the 3nm technology node

Yannick Hermans, Tilmann Heil, Renzo Capelli, Bartholomaeus Szafranek, Daniel Rhinow, Gerson Mette, Patrick Salg, Christian Felix Hermanns, Bappaditya Dey, Luc Halipre, Darko Trivkovic, Paulina Rincon Delgadillo, Thomas Marschner, Sandip Halder

Proceedings Volume 12802, 128020H (2023) https://doi.org/10.1117/12.2678392

KEYWORDS: Extrusion, Extreme ultraviolet, Semiconducting wafers, Critical dimension metrology, Scanning electron microscopy, Extreme ultraviolet lithography, Lithography, Defect inspection

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Proceedings Article | 3 October 2008 Paper

Paper

Model-free and model-based methods for dimensional metrology during the lifetime of a product

Peter Weidner, Alexander Kasic, Thomas Hingst, Carsten Ehlers, Sylke Philipp, Thomas Marschner, Manfred Moert

Proceedings Volume 7155, 71550Y (2008) https://doi.org/10.1117/12.814534

KEYWORDS: Semiconducting wafers, Scatterometry, Model-based design, Dimensional metrology, Atomic force microscopy, Infrared radiation, Metrology, Critical dimension metrology, Thermal modeling, High volume manufacturing

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Proceedings Article | 20 March 2008 Paper

Paper

Gate edge roughness in electron beam direct write and its influence to device characteristics

Kang-Hoon Choi, Rok Dittrich, Matthias Goldbach, Christoph Hohle, Katja Keil, Thomas Marschner, Mark Tesauro, Frank Thrum, Roy Zimmermann, Johannes Kretz

Proceedings Volume 6921, 69210J (2008) https://doi.org/10.1117/12.772649

KEYWORDS: Line edge roughness, Line width roughness, Electron beam direct write lithography, Amplifiers, Metrology, Cadmium, Electron beams, Lithography, Critical dimension metrology, Modulation

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Proceedings Article | 30 October 2007 Paper

Paper

Calibration of contact areas: the influence of corner rounding

Jan Richter, Eva-Maria Zerbe, Thomas Marschner

Proceedings Volume 6730, 67303B (2007) https://doi.org/10.1117/12.740407

KEYWORDS: Calibration, Photomasks, Critical dimension metrology, Standards development, Scanning electron microscopy, Semiconducting wafers, Scanners, Etching, Scatterometry, Roads

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The precise reporting of critical dimension (CD) features on photolithographic masks is an essential part of the mask production process. A wide range of external (standardization by national institutes) and internal (standardization within mask houses to match different tools) methods has been set up to ensure calibration consistency for the simple one dimensional case. One of the current developments is to expand these concepts to area measurements. This is to achieve better reproducibility of CD tools and to achieve a better characterization of contacts with respect to their imaging behaviour in wafer scanners. Here, we report some very fundamental constrains of this approach that have to be taken into account regardless of the actual measurement strategy. The major result is that for two dimensional contacts the shape has to be considered. This is due to the fact that the usually constant offset for calibration of critical dimensions in one dimension is no longer a constant but depends on the absolute size of the contact and the value of the corner rounding. For standard values of 200 nm contacts with corner rounding of 75 nm and calibration offsets around 20 nm maximum systematic differences of about 2nm will be obtained. Given the fact that even 40 nm calibration differences for photomask standards can be observed even for national institutes, these systematic errors can be easily as large as 6 nm for 200 nm structures. This systematic error clearly exceeds the road map targets for critical dimension off-target specifications for the coming technology node. This statement is even emphasized by the fact that in future contact layer specifications will be smaller than for lines/space layers. Once tool independent characterization of contact areas has to be achieved, area measurement in each mask house needs a second thought to implement these systematic constrains. Here, we show that the additional measurement of the corner rounding ís a relatively easy method to accomplish this.

Proceedings Article | 14 May 2007 Paper

Paper

Matching of different CD-metrology tools for global CD signature on photomasks

E.-M. Zerbe, T. Marschner, J. Richter, C. Utzny

Proceedings Volume 6607, 660729 (2007) https://doi.org/10.1117/12.728992

KEYWORDS: Critical dimension metrology, Photomasks, Scanning electron microscopy, Metrology, Standards development, Semiconducting wafers, Calibration, Electron beams, Molecules

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Proceedings Article | 5 April 2007 Paper

Paper

CAD-based line/space mix-up prevention for reticle metrology

Thomas Marschner, Maik Enger, Frank Ludewig, Reuven Falah, Sergey Latinsky, Ofer Lindman, Thomas Coleman

Proceedings Volume 6518, 65181W (2007) https://doi.org/10.1117/12.712523

KEYWORDS: Computer aided design, Scanning electron microscopy, Photomasks, Metrology, Reticles, Pattern recognition, Binary data, Solid modeling, Semiconducting wafers, Target recognition

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Proceedings Article | 5 April 2007 Paper

Paper

Advanced edge roughness measurement application for mask metrology

Thomas Marschner, Jan Richter, Uwe Dersch, Amit Moran, Ruthy Katz, David Chase, Reuven Falah, Thomas Coleman

Proceedings Volume 6518, 65181R (2007) https://doi.org/10.1117/12.712530

KEYWORDS: Photomasks, Line edge roughness, Computer aided design, Metrology, Signal processing, Critical dimension metrology, Line width roughness, Semiconducting wafers, Edge roughness, Scanning electron microscopy

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Proceedings Article | 24 March 2006 Paper

Paper

Automatic CD-SEM offline recipe creation for OPC qualification and process monitoring in a DRAM pilot-fab environment

Uwe Kramer, Thomas Marschner, Dieter Kaiser, Marc Winking, Christian Stief, Stefano Ventola, Dan Lewitzki, Zamir Abraham, Ovadya Menadeva, Sam Shukrun

Proceedings Volume 6152, 61520L (2006) https://doi.org/10.1117/12.654787

KEYWORDS: Optical proximity correction, Semiconducting wafers, Pattern recognition, Computer aided design, Scanning electron microscopy, Image processing, Time metrology, Photomasks, Manufacturing, Inspection

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Proceedings Article | 15 March 2006 Paper

Paper

Application of integrated scatterometry measurements for a wafer-level litho feedback loop in a high-volume 300 mm DRAM production environment

Uwe Kramer, Goeran Fleischer, Thomas Marschner, Steffen Hornig, Heiko Weichert, Dave Hetzer

Proceedings Volume 6155, 615509 (2006) https://doi.org/10.1117/12.682683

KEYWORDS: Semiconducting wafers, Scatterometry, Metrology, Lithography, 3D modeling, Scatter measurement, Critical dimension metrology, Process control, Process modeling, Data processing

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Proceedings Article | 10 May 2005 Paper

Paper

Impact of averaging of CD-SEM measurements on process stability in a full volume DRAM production environment

Thomas Marschner, Uwe Kramer, Anice Lee, Christian Stief

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.598426

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Etching, Process control, Metrology, Precision measurement, Photomasks, Feedback loops, Feedback control, Environmental sensing

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Proceedings Article | 10 May 2005 Paper

Paper

Qualification of an integrated scatterometer for CD measurements of sub-100nm resist structures in a high-volume 300mm DRAM production environment

Thomas Marschner, Goeran Fleischer, Stefan Fuchs, Michael Friedrich, Uwe Kramer, Matthias Voigt, Dave Hetzer

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.598420

KEYWORDS: Semiconducting wafers, Scatterometry, Scatter measurement, Silicon, System integration, Process control, Scanning electron microscopy, Critical dimension metrology, Metrology, Inspection

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SPIE Journal Paper | 1 January 2005

Characterization of 193-nm resist layers by critical dimension-scanning electron microscopy sidewall imaging

Thomas Marschner, Christian Stief

JM3, Vol. 4, Issue 01, 013007, (January 2005) https://doi.org/10.1117/12.10.1117/1.1857534

KEYWORDS: Electron microscopy, Atomic force microscopy, 3D metrology, Line edge roughness, Reconstruction algorithms, Scanners, Finite element methods, Photoresist processing, Critical dimension metrology, Process control

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Proceedings Article | 24 May 2004 Paper

Paper

193-nm resist roughness characterization and process propagation investigation using a CD-SEM

Thomas Marschner, Anice Lee, Stefan Fuchs, Lars Voelkel, Christian Stief

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.535214

KEYWORDS: Line edge roughness, Semiconducting wafers, Spatial frequencies, Etching, Photoresist processing, Line width roughness, Lithography, Critical dimension metrology, Reticles, Molybdenum

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Proceedings Article | 2 June 2003 Paper

Paper

Spectroscopic Ellipsometry based Scatterometry enabling 193nm Litho and Etch process control for the 110nm technology node and beyond

Thomas Hingst, Thomas Marschner, Manfred Moert, Jan Homilius, Marco Guevremont, John Hopkins, Assim Elazami

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.485011

KEYWORDS: Scatterometry, Semiconducting wafers, Single crystal X-ray diffraction, Photomasks, Critical dimension metrology, Process control, Scatter measurement, Scanning electron microscopy, Finite element methods, Spectroscopic ellipsometry

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Proceedings Article | 2 June 2003 Paper

Paper

Characterization of 193-nm resist layers by CD-SEM sidewall imaging

Thomas Marschner, Christian Stief

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.482808

KEYWORDS: 3D metrology, Atomic force microscopy, Scanning electron microscopy, Silicon, Deep ultraviolet, Line edge roughness, Process control, Scanners, Finite element methods, 3D image processing

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Proceedings Article | 22 August 2001 Paper

Paper

Determination of best focus and exposure dose using CD-SEM sidewall imaging

Thomas Marschner, Guy Eytan, Ophir Dror

Proceedings Volume 4344, (2001) https://doi.org/10.1117/12.436761

KEYWORDS: Image processing, 3D metrology, Semiconducting wafers, Critical dimension metrology, Finite element methods, Scanning electron microscopy, Metrology, Reconstruction algorithms, Silicon, Electron beams

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Proceedings Article | 3 February 2000 Paper

Paper

Reticle imaging and metrology using a CD-SEM at IMEC

A. James, F. Felten, M. Polli, Jonathan England, Thomas Marschner, Geert Vandenberghe

Proceedings Volume 3996, (2000) https://doi.org/10.1117/12.377102

KEYWORDS: Reticles, Metrology, Semiconducting wafers, Optical testing, Image processing, Lithography, Scanning electron microscopy, Deep ultraviolet, Phase shifts, 193nm lithography

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Proceedings Article | 26 July 1999 Paper

Paper

CD control comparison for sub-0.18-um patterning using 248-nm lithography and strong resolution enhancement techniques

Geert Vandenberghe, Thomas Marschner, Kurt Ronse, Robert Socha, Mircea Dusa

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354336

KEYWORDS: Photomasks, Binary data, Optical proximity correction, Resolution enhancement technologies, Phase shifts, Semiconducting wafers, Reticles, SRAF, Lithography, Optical lithography

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Proceedings Article | 26 July 1999 Paper

Paper

Intrawafer CD control in state-of-the-art lithography

Ivan Pollentier, Christiaan Baert, Thomas Marschner, Kurt Ronse, Grozdan Grozev, Mario Reybrouck

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354406

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Standards development, Lithography, Chemistry, Metrology, Etching, Photoresist developing, Deep ultraviolet, Photoresist processing

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Proceedings Article | 26 July 1999 Paper

Paper

Variable-threshold resist models for lithography simulation

John Randall, Kurt Ronse, Thomas Marschner, Anne-Marie Goethals, Monique Ercken

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354329

KEYWORDS: Data modeling, Lithography, Photoresist processing, Semiconducting wafers, Mathematical modeling, Wafer-level optics, Reticles, Data conversion, Image processing, Cadmium sulfide

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Lithography simulation tools eliminate costly and time consuming experiments allowing new processes to be developed quickly. There are excellent simulation programs that allow sophisticated modeling of the optics in current and future lithography tools. In many instances, the weak point in lithography simulations is the relatively poor capability to model resists. Sophisticated and accurate models have been developed for many technologically important i-line resists. However the models for 248nm chemically amplified resist are not as mature, and there are many resist of interest for which there are no reliable models. Even when they do exist, these full resist models are computationally expensive and not suitable for some applications such as model based optical proximity corrections. When useful models do not exist, lithographers use the aerial imaging portions of the lithography simulation tools and apply the simplest of resist models, the so-called constant threshold model. While this allows the critical dimensions to be approximated for high contrast resist, it fails to capture important aspects of most resist processes. Empirically trained resists models have come to be used where more accurate lithography simulations are required, but full resist models either do not exist or are to slow to be useful. This paper explores the use of a class of empirically trained models known as variable threshold resist models. This type of model stats with an aerial image calculation and uses a function to locally vary the threshold used to predict CDs. This type of model may be quickly trained for a specific resist process and potentially applied for a wide range of numerical aperture and partial coherence settings. We show how multiple dose and focus data can be used to train a model that includes input parameters extracted from the aerial image as well as pattern factors and exposure dose. The data present suggests that models trained with one set of optical conditions are useful at other optical settings. We also explore different approaches to validate the models and demonstrate some consider the effect of across wafer variation on the training data.

Proceedings Article | 14 June 1999 Paper

Paper

Role of LV-SEM reticle CD measurements on DUV lithography

Thomas Marschner, Ivan Pollentier, Goedele Potoms, Rik Jonckheere, Kurt Ronse, Marco Polli

Proceedings Volume 3677, (1999) https://doi.org/10.1117/12.350870

KEYWORDS: Reticles, Semiconducting wafers, Critical dimension metrology, Scanning electron microscopy, Photomasks, Optical testing, Lithography, Etching, Algorithm development, Deep ultraviolet

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Proceedings Article | 18 December 1998 Paper

Paper

Some challenges for mask making to keep up with the roadmap

Rik Jonckheere, John Randall, Thomas Marschner, Kurt Ronse

Proceedings Volume 3546, (1998) https://doi.org/10.1117/12.332839

KEYWORDS: Photomasks, Critical dimension metrology, Semiconducting wafers, Reticles, Optical proximity correction, Mask making, Lithography, Image processing, Scanning electron microscopy, Scanners

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Proceedings Article | 29 June 1998 Paper

Paper

CD control comparison of step-and-repeat versus step-and-scan DUV lithography for sub-0.25-um gate printing

Kurt Ronse, Mireille Maenhoudt, Thomas Marschner, Luc Van den hove, Bob Streefkerk, Jo Finders, Jan van Schoot, Paul Luehrmann, Anna Maria Minvielle

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310789

KEYWORDS: Critical dimension metrology, Scanners, Reticles, Semiconducting wafers, Control systems, Lithography, Deep ultraviolet, Scanning electron microscopy, Manufacturing, Ions

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Showing 5 of 23 publications

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