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Tomohiro Morishita
at Asahi Kasei Corp
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Publications (1)
Proceedings Article | 8 March 2014 Paper
Homoepitaxial growth of AlN layers using by metalorganic vapor phase epitaxy on freestanding AlN substrate
Tomohiro Morishita, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
Proceedings Volume 8986, 898607 (2014) https://doi.org/10.1117/12.2038848
KEYWORDS: Aluminum nitride, Atomic force microscopy, Vapor phase epitaxy, Crystals, Crystal optics, Temperature metrology, Chemical mechanical planarization, Aluminum, X-ray optics, X-ray diffraction
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