Dioptric systems are usually the first choice for the design of an optical system, e.g. a projection lens or a microscope. But in some cases refractive designs suffer from serious drawbacks like chromatic aberration or material problems (cost, quality, absorption, birefringence, etc.). In such cases reflective systems are an attractive alternative. Reflective systems can be subdivided into two classes: on one hand there are systems with central pupil obscuration, e.g. reflective microscopes or telescopes in astronomy, which have a high aperture but only a small field size, on the other hand there are unobscured systems, e.g. reflective relay systems or EUV projection lenses, which have a large field but only small aperture.
By the combination of an unobscured and an obscured mirror system one obtains systems with large field and high numerical aperture. We present new designs, which prove this design principle.
Recently, the development of high NA lenses for immersion lithography turned from dioptric concepts to catadioptric design forms. The introduction of mirrors involves the new challenge to deal with the inevitable obscuration of either field or pupil. We review the strategies used in this regard for microlithography, while focussing on the two most favored ones, folded and inline concepts. Although the vignetting situation is more complicated for inline systems, we report progress in this field of optical design yielding similar system performance for inline and folded designs. Since inline optical systems are much easier to realize, these are the concept of choice.
Advanced dioptric projection lenses from Carl Zeiss are used in some of the world's most advanced deep ultraviolet projection lithography systems. These lenses provide a resolution of better than 100 nm across the entire field of view with a level of aberration control that maximizes critical dimension uniformity and lithographic process latitude. These dioptric projection lenses are currently being used for critical layer device patterning for a wide array of complex logic, memory, and application specific integrated circuits. Zeiss' involvement in the development of ultraviolet lenses goes back to the year 1902, more than 100 years ago, when von Rohr calculated the first monochromatic ultraviolet microobjectives for ultra-high-resolution microphotography using a line-narrowed source. The modern dioptric projection lenses for lithography are influenced by the collective experience in the field of microscopy, and the more recent experience with early step-and-repeat lenses. We discuss some of the foundations of modern dioptric designs in the context of this history, demonstrating that rapid synthesis of designs is possible using combinations of monochromatic microscope objectives and early step-and-repeat lenses from the 1970s. The problems associated with ultrahigh numerical aperture objectives are discussed. Specifically, it is demonstrated that aspheres can be used effectively to reduce the volume of full field projection lenses, making the mechanical implementation of a 0.90 NA lens feasible in production. Several contemporary dioptric projection lens designs are reviewed in detail. The extension of these designs to numerical apertures greater than 1.0 using immersion techniques is demonstrated. These immersion lenses give the potential for 40-nm resolution.
Advanced dioptric projection lenses from Carl Zeiss are used in some of the world's most advanced deep ultraviolet projection lithography systems. These lenses provide a resolution of better than 100 nm across the entire field of view with a level of aberration control that maximizes critical dimension uniformity and lithographic process latitude. These dioptric projection lenses are currently being used for critical layer device patterning for a wide array of complex logic, memory, and application specific integrated circuits.
Zeiss' involvement in the develop of ultraviolet lenses goes back to the year 1902, exactly 100 years ago, when Moritz von Rohr calculated the first monochromatic ultraviolet micro-objectives for ultra-high resolution microphotography using a line-narrowed source. The modern dioptric projection lenses for lithography are influenced by the collective experience in the field of microscopy, and the more recent experience with early step-and-repeat lenses. This paper discusses some of the foundations of modern dioptric designs in the context of this history, demonstrating that rapid synthesis of designs is possbile using combinations of monochromatic microscope objectives and early step-and-repeat lenses from the 1970's. The problems associated with ultra high numerical aperture objectives are discussed. Specifically, it is demonstrated that aspheres can be used effective to reduce the volume of full field projection lenses, making the mechanical implementation of a 0.90 NA lens feasible in production. Several contemporary dioptric projection lens designs are reviewed in detail. The extension of these designs to numerical apertures greater than 1.0 using immersion techniques is demonstrated. These immersion lenses give the potential for 40 nm resolution.
The continuing trend towards higher integration density of microelectronic circuits requires steadily decreasing feature sizes. The SIA roadmap defines the technologies needed to meet this challenges. One of the fundamental requirements for lithography with a resolution of 100 nm and below is the development of new high-performance optical designs for projection lenses.
The Zeiss MSM100 microlithography simulation microscope can evaluate phase shift and conventional photolithographic masks. In this paper we discuss the MSM design, its operation, image capture and analysis methods, and typical applications. The tool's unique optical system captures `through focus' images of a mask for a selected NA, sigma, and wavelength, thus paralleling the characteristics of a particular optical stepper. The MSM operates at i-line (365 nm) and DUV (248 nm) wavelengths, and handles commonly used 5 or 6 inch reticles. The images obtained are optically equivalent to that incident on resist, but are highly magnified so that they may be recorded using a DUV CCD camera. Typically, features of interest are recorded as a through focus series; image intensity is digitized. Application to the assessment of defect printability, both before and after repair, is presented. Masks have been analyzed to predicted CD values which are in good agreement with subsequent resist work. Unconventional illumination schemes have been studied.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.